JPS52151574A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS52151574A JPS52151574A JP6908276A JP6908276A JPS52151574A JP S52151574 A JPS52151574 A JP S52151574A JP 6908276 A JP6908276 A JP 6908276A JP 6908276 A JP6908276 A JP 6908276A JP S52151574 A JPS52151574 A JP S52151574A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- effect
- cmosic
- latch
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000000694 effects Effects 0.000 abstract 2
- 230000000295 complement effect Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To prevent defects owing to parasitic SCR effect (latch-up effect) which usually becomes a problem in a CMOSIC, in a complementary type semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6908276A JPS52151574A (en) | 1976-06-11 | 1976-06-11 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6908276A JPS52151574A (en) | 1976-06-11 | 1976-06-11 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52151574A true JPS52151574A (en) | 1977-12-16 |
Family
ID=13392300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6908276A Pending JPS52151574A (en) | 1976-06-11 | 1976-06-11 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52151574A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5493981A (en) * | 1978-01-09 | 1979-07-25 | Toshiba Corp | Semiconductor device |
JPS5575265A (en) * | 1978-12-01 | 1980-06-06 | Fujitsu Ltd | Complementary type field-effect metal-insulator- semiconductor device |
-
1976
- 1976-06-11 JP JP6908276A patent/JPS52151574A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5493981A (en) * | 1978-01-09 | 1979-07-25 | Toshiba Corp | Semiconductor device |
JPS5575265A (en) * | 1978-12-01 | 1980-06-06 | Fujitsu Ltd | Complementary type field-effect metal-insulator- semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT8125510A0 (en) | SEMICONDUCTOR DEVICE, ESPECIALLY POWER TRANSISTOR. | |
JPS53121537A (en) | Semiconductor logic circuit device | |
JPS52151574A (en) | Semiconductor device | |
JPS5432082A (en) | Semiconductor device | |
JPS5223251A (en) | Semiconductor circuit | |
JPS5249570A (en) | Transport apparatus | |
JPS51140490A (en) | Lateral transistor | |
JPS5227277A (en) | Darlington connction type semiconductor unit | |
FR1271581A (en) | Expansion correction device, particularly for machine tools | |
JPS5234642A (en) | Information processing device with debugging facilities | |
JPS51114037A (en) | A peripheral circuit design for fixed insulation-gate semiconductor me mories | |
JPS5310279A (en) | Mesa type semiconductor device | |
JPS53134373A (en) | Semiconductor integrated circuit device | |
JPS52154360A (en) | Device for high pressure oxidatioon diffusion for semiconductor | |
JPS5211875A (en) | Manufacturing method of a semiconductor device | |
JPS51138386A (en) | Lateral type transistor | |
JPS5368047A (en) | Input signal buffer circuit | |
NL169662C (en) | Basic logic circuit, as well as integrated semiconductor device. | |
JPS5384690A (en) | Field effect transistor | |
JPS5346580A (en) | Contact input interphase device | |
JPS539117A (en) | Micro-fiche holder | |
JPS5372567A (en) | Semiconductor device | |
JPS5367355A (en) | Substituting tool for semiconductor wafer | |
JPS5287961A (en) | Division circuit | |
JPS5265650A (en) | Switching circuit |