JPS52151574A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52151574A
JPS52151574A JP6908276A JP6908276A JPS52151574A JP S52151574 A JPS52151574 A JP S52151574A JP 6908276 A JP6908276 A JP 6908276A JP 6908276 A JP6908276 A JP 6908276A JP S52151574 A JPS52151574 A JP S52151574A
Authority
JP
Japan
Prior art keywords
semiconductor device
effect
cmosic
latch
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6908276A
Other languages
Japanese (ja)
Inventor
Takeshi Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6908276A priority Critical patent/JPS52151574A/en
Publication of JPS52151574A publication Critical patent/JPS52151574A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Abstract

PURPOSE:To prevent defects owing to parasitic SCR effect (latch-up effect) which usually becomes a problem in a CMOSIC, in a complementary type semiconductor device.
JP6908276A 1976-06-11 1976-06-11 Semiconductor device Pending JPS52151574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6908276A JPS52151574A (en) 1976-06-11 1976-06-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6908276A JPS52151574A (en) 1976-06-11 1976-06-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS52151574A true JPS52151574A (en) 1977-12-16

Family

ID=13392300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6908276A Pending JPS52151574A (en) 1976-06-11 1976-06-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52151574A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493981A (en) * 1978-01-09 1979-07-25 Toshiba Corp Semiconductor device
JPS5575265A (en) * 1978-12-01 1980-06-06 Fujitsu Ltd Complementary type field-effect metal-insulator- semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493981A (en) * 1978-01-09 1979-07-25 Toshiba Corp Semiconductor device
JPS5575265A (en) * 1978-12-01 1980-06-06 Fujitsu Ltd Complementary type field-effect metal-insulator- semiconductor device

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