JPS5432082A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5432082A
JPS5432082A JP9789077A JP9789077A JPS5432082A JP S5432082 A JPS5432082 A JP S5432082A JP 9789077 A JP9789077 A JP 9789077A JP 9789077 A JP9789077 A JP 9789077A JP S5432082 A JPS5432082 A JP S5432082A
Authority
JP
Japan
Prior art keywords
semiconductor device
lsi
actuation
secure
higher speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9789077A
Other languages
Japanese (ja)
Inventor
Osamu Minato
Toshiaki Masuhara
Seiji Kubo
Kotaro Nishimura
Norimasa Yasui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9789077A priority Critical patent/JPS5432082A/en
Publication of JPS5432082A publication Critical patent/JPS5432082A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To secure the actuation for complementary MOS-IC and LSI in a higher speed than conventional.
JP9789077A 1977-08-17 1977-08-17 Semiconductor device Pending JPS5432082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9789077A JPS5432082A (en) 1977-08-17 1977-08-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9789077A JPS5432082A (en) 1977-08-17 1977-08-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5432082A true JPS5432082A (en) 1979-03-09

Family

ID=14204338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9789077A Pending JPS5432082A (en) 1977-08-17 1977-08-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5432082A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55118666A (en) * 1979-03-05 1980-09-11 Nec Corp Semiconductor device
JPS5925797U (en) * 1982-08-09 1984-02-17 櫛部　功 Lubrication system
JPS62141755A (en) * 1985-12-16 1987-06-25 Mitsubishi Electric Corp Semiconductor random access memory
JPS62155340U (en) * 1986-03-25 1987-10-02
US5386135A (en) * 1985-09-25 1995-01-31 Hitachi, Ltd. Semiconductor CMOS memory device with separately biased wells
US5391904A (en) * 1988-09-01 1995-02-21 Fujitsu Limited Semiconductor delay circuit device
US6740958B2 (en) 1985-09-25 2004-05-25 Renesas Technology Corp. Semiconductor memory device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55118666A (en) * 1979-03-05 1980-09-11 Nec Corp Semiconductor device
JPS6353701B2 (en) * 1979-03-05 1988-10-25 Nippon Electric Co
JPS5925797U (en) * 1982-08-09 1984-02-17 櫛部　功 Lubrication system
US5386135A (en) * 1985-09-25 1995-01-31 Hitachi, Ltd. Semiconductor CMOS memory device with separately biased wells
US5497023A (en) * 1985-09-25 1996-03-05 Hitachi, Ltd. Semiconductor memory device having separately biased wells for isolation
US6208010B1 (en) 1985-09-25 2001-03-27 Hitachi, Ltd. Semiconductor memory device
US6740958B2 (en) 1985-09-25 2004-05-25 Renesas Technology Corp. Semiconductor memory device
US6864559B2 (en) 1985-09-25 2005-03-08 Renesas Technology Corp. Semiconductor memory device
JPS62141755A (en) * 1985-12-16 1987-06-25 Mitsubishi Electric Corp Semiconductor random access memory
JPS62155340U (en) * 1986-03-25 1987-10-02
US5391904A (en) * 1988-09-01 1995-02-21 Fujitsu Limited Semiconductor delay circuit device

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