JPS57188864A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS57188864A
JPS57188864A JP56073496A JP7349681A JPS57188864A JP S57188864 A JPS57188864 A JP S57188864A JP 56073496 A JP56073496 A JP 56073496A JP 7349681 A JP7349681 A JP 7349681A JP S57188864 A JPS57188864 A JP S57188864A
Authority
JP
Japan
Prior art keywords
resistance element
memory cell
resistance
layer
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56073496A
Other languages
Japanese (ja)
Inventor
Joji Okada
Akira Endo
Mitsunori Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP56073496A priority Critical patent/JPS57188864A/en
Publication of JPS57188864A publication Critical patent/JPS57188864A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To easily manufacture a high resistance element with smaller occupied space without increasing the number of manufacturing processes by a device wherein respective sections of a memory cell is additionally formed in other positions and these additional regions are serially connected to form the resistance element. CONSTITUTION:In a memory cell 2 for a RAM, respective components of a resistance element 1 are formed in the same processes as those of a memory cell 2. The resistance element 1 comprises an N<-> type diffusion resistance region 4 which is formed on a P type substrate 1 through diffusion an upper poly-Si resistance layer 5 and a lower poly-Si resistance layer 6, which are serially connected to form a serial resistance. These regions 4, 5 and 6 are formed together with an N<+> type diffusion layer 7 (bit line) of the memory cell 2, a poly- Si gate 8 connected to a word line and a lower poly-Si layer 9 seriving as one electrode of a capacitor, respectively. By so doing, the high resistance element can be manufactured without increasing the number of manufacturing processes.
JP56073496A 1981-05-18 1981-05-18 Semiconductor memory device Pending JPS57188864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56073496A JPS57188864A (en) 1981-05-18 1981-05-18 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56073496A JPS57188864A (en) 1981-05-18 1981-05-18 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS57188864A true JPS57188864A (en) 1982-11-19

Family

ID=13519917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56073496A Pending JPS57188864A (en) 1981-05-18 1981-05-18 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS57188864A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189965A (en) * 1984-02-17 1985-09-27 インテル・コーポレーシヨン Metal-oxide film-semiconductor (mos) memory
US6166425A (en) * 1997-07-16 2000-12-26 Nec Corporation Semiconductor device having a resistance element with a reduced area

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189965A (en) * 1984-02-17 1985-09-27 インテル・コーポレーシヨン Metal-oxide film-semiconductor (mos) memory
US6166425A (en) * 1997-07-16 2000-12-26 Nec Corporation Semiconductor device having a resistance element with a reduced area
KR100297148B1 (en) * 1997-07-16 2001-08-07 가네꼬 히사시 Semiconductor device

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