JPS5671986A - Light emanating diode - Google Patents
Light emanating diodeInfo
- Publication number
- JPS5671986A JPS5671986A JP14843679A JP14843679A JPS5671986A JP S5671986 A JPS5671986 A JP S5671986A JP 14843679 A JP14843679 A JP 14843679A JP 14843679 A JP14843679 A JP 14843679A JP S5671986 A JPS5671986 A JP S5671986A
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- wave length
- precipitated
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To pick up a great quantity of light from a one surface disregarding a critical angle with a comparatively low price by a method wherein a light diffusion film is formed on the surface of a mono crystal semiconductor from which light is picked up.
CONSTITUTION: On the output surface of a GaAlAs LED consisting of an N type semiconductor 4, a P type semiconductor 5 and a P type crystal substrate 6, a polycrystal GaP 10 is precipitated in a several times thickness of a wave length. In other words, when a luminous wave length is 6,700Å and a refractive index of GaP is 3.4, approximately 1∼2μ film is precipitated because the wave length within the film is 2,000Å. Here, the grain diameter of the precipitation film must be rough and the precipitated film must not be transparent but must be a white milky light diffusion layer. With a light diffusion film like this, light reaching the surface enters the diffusion film and acatters to every direction, as a result, approximately 50% thereof can be picked up to the external side. Namely, in comparison with the case of using no diffusion film, light of 5 times or more is obtained, thus, resulting in a very light LED. Still, even if there exsists a film having a different refractive index as an inactivated film on a semiconductor surface, when a film thickness is sufficiently thinner than a wave length, a sufficient effect can be obtained.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14843679A JPS5671986A (en) | 1979-11-16 | 1979-11-16 | Light emanating diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14843679A JPS5671986A (en) | 1979-11-16 | 1979-11-16 | Light emanating diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5671986A true JPS5671986A (en) | 1981-06-15 |
| JPS6133276B2 JPS6133276B2 (en) | 1986-08-01 |
Family
ID=15452743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14843679A Granted JPS5671986A (en) | 1979-11-16 | 1979-11-16 | Light emanating diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5671986A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005191514A (en) * | 2003-10-31 | 2005-07-14 | Toyoda Gosei Co Ltd | Light emitting element and light emitting device |
| US7157294B2 (en) | 2001-06-06 | 2007-01-02 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor light-emitting element |
| JP2008503891A (en) * | 2004-06-25 | 2008-02-07 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | LED with improved light emissivity profile |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63109372U (en) * | 1986-12-30 | 1988-07-14 |
-
1979
- 1979-11-16 JP JP14843679A patent/JPS5671986A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7157294B2 (en) | 2001-06-06 | 2007-01-02 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor light-emitting element |
| JP2005191514A (en) * | 2003-10-31 | 2005-07-14 | Toyoda Gosei Co Ltd | Light emitting element and light emitting device |
| JP4590905B2 (en) * | 2003-10-31 | 2010-12-01 | 豊田合成株式会社 | Light emitting element and light emitting device |
| JP2008503891A (en) * | 2004-06-25 | 2008-02-07 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | LED with improved light emissivity profile |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6133276B2 (en) | 1986-08-01 |
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