JPS6423584A - Light-coupled semiconductor device - Google Patents

Light-coupled semiconductor device

Info

Publication number
JPS6423584A
JPS6423584A JP17983687A JP17983687A JPS6423584A JP S6423584 A JPS6423584 A JP S6423584A JP 17983687 A JP17983687 A JP 17983687A JP 17983687 A JP17983687 A JP 17983687A JP S6423584 A JPS6423584 A JP S6423584A
Authority
JP
Japan
Prior art keywords
semiconductor layer
light
transparent medium
layer
sticking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17983687A
Other languages
Japanese (ja)
Inventor
Mitsuo Matsunami
Masayoshi Koba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP17983687A priority Critical patent/JPS6423584A/en
Publication of JPS6423584A publication Critical patent/JPS6423584A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To improve optical coupling efficiency and reliability for an optical coupling device, by forming a light-receiving device in one semiconductor layer and forming a photodetector in the other semiconductor layer and making the one semiconductor layer face the other semiconductor layer and next by sticking these semiconductor layers to each other with a light transmissive transparent medium in between. CONSTITUTION:A photodetector is formed in an upper semiconductor layer 1, and a light-emitting device is formed in a lower semiconductor layer 14. The upper plane of the lower semiconductor layer 14 is first coated with a transparent medium 21. This transparent medium 21 is made of epoxy resin, acrylic resin, or the like, and it serves as a layer for sticking the upper semiconductor layer 1 and the lower semiconductor layer 14. The upper semiconductor layer 1 is turned upside down and piled on the lower semiconductor layer 14 and they are stuck to each other. A sticking process of the upper semiconductor layer 1 and the lower semiconductor layer 14 is performed in such a way that they are fixed on a position where a p-type diffusion layer 2 is made to face a p-type diffusion layer 16 and the transparent medium 21 is hardened at a prescribed temperature. Scribing lines 12 and 17 are positioned to face each other by such a sticking process.
JP17983687A 1987-07-17 1987-07-17 Light-coupled semiconductor device Pending JPS6423584A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17983687A JPS6423584A (en) 1987-07-17 1987-07-17 Light-coupled semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17983687A JPS6423584A (en) 1987-07-17 1987-07-17 Light-coupled semiconductor device

Publications (1)

Publication Number Publication Date
JPS6423584A true JPS6423584A (en) 1989-01-26

Family

ID=16072745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17983687A Pending JPS6423584A (en) 1987-07-17 1987-07-17 Light-coupled semiconductor device

Country Status (1)

Country Link
JP (1) JPS6423584A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008093880A1 (en) * 2007-02-02 2008-08-07 Sanyo Electric Co., Ltd. Semiconductor device and method for manufacturing the same
WO2008123020A1 (en) * 2007-03-09 2008-10-16 Sanyo Electric Co., Ltd. Semiconductor device and method for manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008093880A1 (en) * 2007-02-02 2008-08-07 Sanyo Electric Co., Ltd. Semiconductor device and method for manufacturing the same
US8188497B2 (en) 2007-02-02 2012-05-29 Sanyo Semiconductor Co., Ltd. Semiconductor device and method of manufacturing the same
JP5295783B2 (en) * 2007-02-02 2013-09-18 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Semiconductor device
WO2008123020A1 (en) * 2007-03-09 2008-10-16 Sanyo Electric Co., Ltd. Semiconductor device and method for manufacturing the same

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