JPS6423584A - Light-coupled semiconductor device - Google Patents
Light-coupled semiconductor deviceInfo
- Publication number
- JPS6423584A JPS6423584A JP17983687A JP17983687A JPS6423584A JP S6423584 A JPS6423584 A JP S6423584A JP 17983687 A JP17983687 A JP 17983687A JP 17983687 A JP17983687 A JP 17983687A JP S6423584 A JPS6423584 A JP S6423584A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- light
- transparent medium
- layer
- sticking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
PURPOSE:To improve optical coupling efficiency and reliability for an optical coupling device, by forming a light-receiving device in one semiconductor layer and forming a photodetector in the other semiconductor layer and making the one semiconductor layer face the other semiconductor layer and next by sticking these semiconductor layers to each other with a light transmissive transparent medium in between. CONSTITUTION:A photodetector is formed in an upper semiconductor layer 1, and a light-emitting device is formed in a lower semiconductor layer 14. The upper plane of the lower semiconductor layer 14 is first coated with a transparent medium 21. This transparent medium 21 is made of epoxy resin, acrylic resin, or the like, and it serves as a layer for sticking the upper semiconductor layer 1 and the lower semiconductor layer 14. The upper semiconductor layer 1 is turned upside down and piled on the lower semiconductor layer 14 and they are stuck to each other. A sticking process of the upper semiconductor layer 1 and the lower semiconductor layer 14 is performed in such a way that they are fixed on a position where a p-type diffusion layer 2 is made to face a p-type diffusion layer 16 and the transparent medium 21 is hardened at a prescribed temperature. Scribing lines 12 and 17 are positioned to face each other by such a sticking process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17983687A JPS6423584A (en) | 1987-07-17 | 1987-07-17 | Light-coupled semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17983687A JPS6423584A (en) | 1987-07-17 | 1987-07-17 | Light-coupled semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6423584A true JPS6423584A (en) | 1989-01-26 |
Family
ID=16072745
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17983687A Pending JPS6423584A (en) | 1987-07-17 | 1987-07-17 | Light-coupled semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6423584A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008093880A1 (en) * | 2007-02-02 | 2008-08-07 | Sanyo Electric Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2008123020A1 (en) * | 2007-03-09 | 2008-10-16 | Sanyo Electric Co., Ltd. | Semiconductor device and method for manufacturing the same |
-
1987
- 1987-07-17 JP JP17983687A patent/JPS6423584A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008093880A1 (en) * | 2007-02-02 | 2008-08-07 | Sanyo Electric Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8188497B2 (en) | 2007-02-02 | 2012-05-29 | Sanyo Semiconductor Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP5295783B2 (en) * | 2007-02-02 | 2013-09-18 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | Semiconductor device |
WO2008123020A1 (en) * | 2007-03-09 | 2008-10-16 | Sanyo Electric Co., Ltd. | Semiconductor device and method for manufacturing the same |
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