JPS5710286A - Assembling of semiconductor device - Google Patents

Assembling of semiconductor device

Info

Publication number
JPS5710286A
JPS5710286A JP8480080A JP8480080A JPS5710286A JP S5710286 A JPS5710286 A JP S5710286A JP 8480080 A JP8480080 A JP 8480080A JP 8480080 A JP8480080 A JP 8480080A JP S5710286 A JPS5710286 A JP S5710286A
Authority
JP
Japan
Prior art keywords
light
received
chip
package
fixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8480080A
Other languages
Japanese (ja)
Inventor
Hiroshi Matsubara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8480080A priority Critical patent/JPS5710286A/en
Publication of JPS5710286A publication Critical patent/JPS5710286A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To perform an accurate assembling of the semiconductor with other optical instruments by a method wherein an element is fixed temporarily when assembling a light-emitting element, a reflected light is received by a light-receiving section by irradiating the light sent from a positioning light source to the element and fixed it after the element has been rotated in such manner that the amount of received light will be reached to maximum. CONSTITUTION:Solder is placed on the die-bonded section 2 provided on the package 1, on which the laser chip 3 such as a light-emitting element is placed and fixed temporarily. Then, leaving a proper interval, the light sent from the positioning light source 11 located on the chip 3 is irradiated on the mirror face 10a of the chip 3 through a half mirror, the reflected light is received by the light-receiving section 13 through the mirror 12 again. In this constitution, the optical axes of the package 1 and the light source 11 are formed in parallel, the chip 3 is rotated on the solder and then fixed when the amount of the received light reached maximum. Through these procedures, the junction of the optical fiber and the like, which will be installed on the package 1, is performed correctly and the application of this method to other purposes can be expanded.
JP8480080A 1980-06-20 1980-06-20 Assembling of semiconductor device Pending JPS5710286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8480080A JPS5710286A (en) 1980-06-20 1980-06-20 Assembling of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8480080A JPS5710286A (en) 1980-06-20 1980-06-20 Assembling of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5710286A true JPS5710286A (en) 1982-01-19

Family

ID=13840777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8480080A Pending JPS5710286A (en) 1980-06-20 1980-06-20 Assembling of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5710286A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133633U (en) * 1984-02-13 1985-09-06 シャープ株式会社 Laser diode assembly equipment
JPS60186081A (en) * 1984-03-05 1985-09-21 Nippon Telegr & Teleph Corp <Ntt> Manufacture of laser diode module
JPS61174689A (en) * 1985-01-29 1986-08-06 Rohm Co Ltd Setting method of die-bonding position of semiconductor chip for electronic component
JPS61174691A (en) * 1985-01-29 1986-08-06 Rohm Co Ltd Setting method of die-bonding position of semiconductor chip for electronic component

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133633U (en) * 1984-02-13 1985-09-06 シャープ株式会社 Laser diode assembly equipment
JPS60186081A (en) * 1984-03-05 1985-09-21 Nippon Telegr & Teleph Corp <Ntt> Manufacture of laser diode module
JPH0262956B2 (en) * 1984-03-05 1990-12-27 Nippon Telegraph & Telephone
JPS61174689A (en) * 1985-01-29 1986-08-06 Rohm Co Ltd Setting method of die-bonding position of semiconductor chip for electronic component
JPS61174691A (en) * 1985-01-29 1986-08-06 Rohm Co Ltd Setting method of die-bonding position of semiconductor chip for electronic component

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