JPS5783080A - Semiconductor laser module device - Google Patents

Semiconductor laser module device

Info

Publication number
JPS5783080A
JPS5783080A JP15794380A JP15794380A JPS5783080A JP S5783080 A JPS5783080 A JP S5783080A JP 15794380 A JP15794380 A JP 15794380A JP 15794380 A JP15794380 A JP 15794380A JP S5783080 A JPS5783080 A JP S5783080A
Authority
JP
Japan
Prior art keywords
laser
light
thickness
wave length
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15794380A
Other languages
Japanese (ja)
Inventor
Masatoshi Saruwatari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP15794380A priority Critical patent/JPS5783080A/en
Publication of JPS5783080A publication Critical patent/JPS5783080A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4207—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback
    • G02B6/4208—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback using non-reciprocal elements or birefringent plates, i.e. quasi-isolators
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4207—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback
    • G02B6/4208—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback using non-reciprocal elements or birefringent plates, i.e. quasi-isolators
    • G02B6/4209—Optical features

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To eliminate a reflection in a coupling region between an optical fiber and a laser light by a method wherein a window thickness of a laser package is preferred to be 1/4 of a wave length and its optical axis is slanted to show an angle of 45 deg. in a perpendicular plane to a polarizing direction of the light from a laser chip. CONSTITUTION:A laser light 23 is a linear polarized wave parallel to a junction plane. A polarizing direction is taken as x axis, and a plate 24 having a thickness of 1/4 of a wave length is placed on it. Because an optical axis 25 is slanted to show 45 deg. to the x axis, the light is reflected at a surface 27 through being converted into a clockwise circular polarized light 26, and it is changed by second passing through the plate 24 having a thickness of 1/4 of a wave length, into a linear polarized wave 29 which has perpendicular relation to the initial linear polarized light. Accordingly when a plate having a thickness of 1/4 of a wave length is inserted at the rear stage of a laser through preferring an axial direction, as easy separation of a reflected light returning to the laser can be attained, and a coupling efficiency is not expended as a sacrifice. In an embodiment, a hermetic window 17 is built of a plate having thickness of 1/4 of a wave length made of sapphire and is fixed by soldering so that an optical axis 25 of sapphire may be taken to be slanted at 45 deg. referring to an active layer of the laser 15 when hermetically sealed. In this constitution reflection from an incident surface of the fiber 18 is very low and is made lower with an additional utilization of anti-reflection film.
JP15794380A 1980-11-10 1980-11-10 Semiconductor laser module device Pending JPS5783080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15794380A JPS5783080A (en) 1980-11-10 1980-11-10 Semiconductor laser module device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15794380A JPS5783080A (en) 1980-11-10 1980-11-10 Semiconductor laser module device

Publications (1)

Publication Number Publication Date
JPS5783080A true JPS5783080A (en) 1982-05-24

Family

ID=15660853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15794380A Pending JPS5783080A (en) 1980-11-10 1980-11-10 Semiconductor laser module device

Country Status (1)

Country Link
JP (1) JPS5783080A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961984A (en) * 1982-09-30 1984-04-09 Sharp Corp Semiconductor laser device
JPS6057695A (en) * 1983-09-08 1985-04-03 Matsushita Electric Ind Co Ltd Polarizing control type light source and polarizing controlling device
JPS6057694A (en) * 1983-09-08 1985-04-03 Matsushita Electric Ind Co Ltd Semiconductor laser
JPS60156766U (en) * 1984-03-27 1985-10-18 日本電気株式会社 semiconductor laser equipment
JPS6124705U (en) * 1984-07-19 1986-02-14 株式会社東芝 optical transmission module
JPS6151769U (en) * 1984-09-07 1986-04-07
EP0416195A2 (en) * 1989-09-05 1991-03-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
JPH07197580A (en) * 1995-01-26 1995-08-01 Ykk Architect Prod Kk Connecting structure of main horizontal member to horizontal member
US7580599B2 (en) * 2007-06-22 2009-08-25 Fujitsu Limited Optical switch and MEMS package
US11500275B2 (en) 2019-02-15 2022-11-15 Nichia Corporation Light emitting device and optical device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54149487A (en) * 1978-05-16 1979-11-22 Mitsubishi Electric Corp Semiconductor laser device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54149487A (en) * 1978-05-16 1979-11-22 Mitsubishi Electric Corp Semiconductor laser device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961984A (en) * 1982-09-30 1984-04-09 Sharp Corp Semiconductor laser device
JPS6057695A (en) * 1983-09-08 1985-04-03 Matsushita Electric Ind Co Ltd Polarizing control type light source and polarizing controlling device
JPS6057694A (en) * 1983-09-08 1985-04-03 Matsushita Electric Ind Co Ltd Semiconductor laser
JPS60156766U (en) * 1984-03-27 1985-10-18 日本電気株式会社 semiconductor laser equipment
JPS6124705U (en) * 1984-07-19 1986-02-14 株式会社東芝 optical transmission module
JPH0423216Y2 (en) * 1984-07-19 1992-05-29
JPS6151769U (en) * 1984-09-07 1986-04-07
EP0416195A2 (en) * 1989-09-05 1991-03-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
JPH07197580A (en) * 1995-01-26 1995-08-01 Ykk Architect Prod Kk Connecting structure of main horizontal member to horizontal member
US7580599B2 (en) * 2007-06-22 2009-08-25 Fujitsu Limited Optical switch and MEMS package
US11500275B2 (en) 2019-02-15 2022-11-15 Nichia Corporation Light emitting device and optical device
US11848533B2 (en) 2019-02-15 2023-12-19 Nichia Corporation Light emitting device including light-transmissive member and lens member

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