JPS62287673A - Photo coupler - Google Patents

Photo coupler

Info

Publication number
JPS62287673A
JPS62287673A JP61131360A JP13136086A JPS62287673A JP S62287673 A JPS62287673 A JP S62287673A JP 61131360 A JP61131360 A JP 61131360A JP 13136086 A JP13136086 A JP 13136086A JP S62287673 A JPS62287673 A JP S62287673A
Authority
JP
Japan
Prior art keywords
light
emitting element
light emitting
receiving element
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61131360A
Other languages
Japanese (ja)
Other versions
JPH0797656B2 (en
Inventor
Takao Kawamura
河村 孝夫
Takashi Hosoi
細居 隆志
Kokichi Ishiki
石櫃 鴻吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP13136086A priority Critical patent/JPH0797656B2/en
Publication of JPS62287673A publication Critical patent/JPS62287673A/en
Publication of JPH0797656B2 publication Critical patent/JPH0797656B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To achieve cost reduction and miniaturization, by forming a light emitting element and a light receiving element on a first plane of a transparent substrate, and forming, on a second plane facing to the first plane of the transparent substrate, a reflection means which reflects a light projected from the light emitting element and can receive this reflected light applying the light receiving element. CONSTITUTION:A light emitting element E and a light receiving element P are formed in a line on the same plane of a transparent substrate/composed of spinel, sapphire, etc. The light emitting element E has a structure wherein a P<+> type GaAlAs layer 2, a P-type GaAs layer 3 and an N-type GaAs layer 4 are laminated in order. The light receiving element P has a structure wherein a P<+> type Si layer 5, a P-type Si layer 6 and an N-type Si layer are laminated in order. Therefor a light radiated from the light emitting element E penetrates the transparent substrate 1, and irradiates a metal reflecting layer 12 by which the light is reflected. The reflected light l2 is received by the light receiving element P. As the light emitting element and the light receiving element are arranged on the same substrate to form a planar type, the use of several substrates and the electrical insulation are made unnecessary, and miniaturization is enabled.

Description

【発明の詳細な説明】 3、発明の詳細な説明 〔産業上の利用分野〕 本発明はフォトカプラーに関し、特に発光素子及び受光
素子を同一の板面上に並べたプレーナー型フォトカプラ
ーに関するものである。
[Detailed Description of the Invention] 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a photocoupler, and particularly to a planar type photocoupler in which a light emitting element and a light receiving element are arranged on the same plate surface. be.

〔従来技術及びその問題点〕[Prior art and its problems]

従来のフォトカプラーは発光素子と受光素子を個別に製
作し、画素子をエポキシ樹脂等の電気絶縁体を介して対
向させるのに伴って画素子を所定の位置に正確に配置し
、更にこれらをパッケージ内に収納して得られる。
Conventional photocouplers manufacture the light-emitting element and the light-receiving element separately, place the pixel elements facing each other through an electrical insulator such as epoxy resin, and place the pixel elements accurately in a predetermined position. It is obtained by storing it in a package.

しかしながら、この製作方法によれば、製造プロセスが
複雑化して製造歩留りを低下させ、これに伴って製造コ
ストが高くなるという問題が生じる。更に、このフォト
カプラーは発光素子及び受光素子のそれぞれに用いられ
る基板、パッケージ、並びに画素子に介在する電気絶縁
体によって所定の寸法以上に設定する必要があり、その
寸法以下に小型化することが難しくなっている。
However, according to this manufacturing method, there arises a problem that the manufacturing process becomes complicated and the manufacturing yield is lowered, and the manufacturing cost increases accordingly. Furthermore, this photocoupler needs to be set to a predetermined size or more depending on the substrate used for the light emitting element and the light receiving element, the package, and the electrical insulator interposed in the pixel element, and it is not possible to miniaturize it below that size. It's getting difficult.

〔発明の目的〕[Purpose of the invention]

従って本発明の目的は低コスト化及び小型化が達成され
たフォトカプラーを提供することにある。
Accordingly, an object of the present invention is to provide a photocoupler that can be reduced in cost and size.

〔問題点を解決するための手段〕[Means for solving problems]

本発明によれば、透明基板の第1板面に発光素子と受光
素子を形成すると共に、この透明基板の第1板面と対向
する第2板面に、発光素子が投光した光を反射させ且つ
この反射光が受光素子で受光し得るようにした反射手段
を形成したことを特徴とするフォトカプラーが提供され
る。
According to the present invention, the light emitting element and the light receiving element are formed on the first plate surface of the transparent substrate, and the light projected by the light emitting element is reflected on the second plate surface opposite to the first plate surface of the transparent substrate. Provided is a photocoupler characterized in that a reflecting means is formed to allow the reflected light to be reflected and to be received by a light-receiving element.

〔実施例〕〔Example〕

以下、本発明のフォトカプラーを第1図に示した実施例
により詳細に説明する。
Hereinafter, the photocoupler of the present invention will be explained in detail with reference to the embodiment shown in FIG.

第1図は本発明の典型的なプレーナー型フォトカプラー
を示しており、スピネル、サファイアなどから成る透明
基板1上に発光素子Eと受光素子Pが同一板面上に並ん
で形成されており、この発光素子EはP0形GaAlA
sN2、P形GaAs層3及びn形GaAs層4が順次
積層された構造となっており、また受光素子PはP゛形
Si層5、P形Si層6及びn形Si層が順次積層され
た構造となっている。また、8.9及び10.11はそ
れぞれ発光素子E及び受光素子Pの電極である。そして
、12は透明基板1の素子搭載面と対向した板面に蒸着
されたAIなどから成る金属反射層である。
FIG. 1 shows a typical planar photocoupler of the present invention, in which a light emitting element E and a light receiving element P are formed side by side on the same plate surface on a transparent substrate 1 made of spinel, sapphire, etc. This light emitting element E is a P0 type GaAlA
sN2, a P-type GaAs layer 3, and an n-type GaAs layer 4 are sequentially laminated, and the light-receiving element P has a structure in which a P-type Si layer 5, a P-type Si layer 6, and an n-type Si layer are sequentially laminated. It has a similar structure. Moreover, 8.9 and 10.11 are electrodes of the light emitting element E and the light receiving element P, respectively. Reference numeral 12 denotes a metal reflective layer made of AI or the like and deposited on the surface of the transparent substrate 1 facing the element mounting surface.

このフォトカプラーによれば、発光素子Eから照射され
た光β、は透明基板1を通過して金属反射1i112を
投光し、金属反射層12で反射されるとその反射光12
は受光素子Pで受光される。
According to this photocoupler, the light β irradiated from the light emitting element E passes through the transparent substrate 1 and projects the metal reflection 1i 112, and when reflected by the metal reflection layer 12, the reflected light 12
is received by the light receiving element P.

かくして、このフォトカプラーは同一基板上に発光素子
と受光素子が形成されたプレーナー型であるために複数
の基板を用いる必要がなく、また、前述した電気絶縁体
を不要とする。
Since this photocoupler is of a planar type in which a light emitting element and a light receiving element are formed on the same substrate, it is not necessary to use a plurality of substrates, and the above-mentioned electric insulator is not required.

次に本発明の他の実施例を第2図に示す。即ち、第2図
によれば、第1図に示したフォトカプラーニ対して、更
に透明基板1のすべての側面にA1などを蒸着させて金
属反射1i12aを形成した。尚、第2図中第1図と同
一箇所には同一符号が付しである。
Next, another embodiment of the present invention is shown in FIG. That is, according to FIG. 2, in addition to the photocoupler shown in FIG. 1, A1 or the like was further vapor-deposited on all sides of the transparent substrate 1 to form a metal reflection 1i12a. Note that the same parts in FIG. 2 as in FIG. 1 are given the same reference numerals.

このフォトカプラーによれば、第1図にて示した光1−
12以外に、発光素子Eから透明基板1の側面に照射さ
れた光/!3が金属反射層12aで反射され、その反射
光が金属反射層12で再び反射されたり、或いは発光素
子Eから金属反射層12へ照射された光14が金属反射
層L2aで再び反射されたりするなどして受光素子Pで
の受光量が第1図に示したフォトカプラーよりも著しく
太き(なる。これにより、発光素子Eの発光量に対する
受光素子Pでの光電変換効率が大きくなり、その結果、
フォトカプラーのスイッチングをより確実に動作させる
ことができる。
According to this photocoupler, the light 1- shown in FIG.
In addition to 12, light irradiated from the light emitting element E onto the side surface of the transparent substrate 1 /! 3 is reflected by the metal reflective layer 12a, and the reflected light is reflected again by the metal reflective layer 12, or the light 14 irradiated from the light emitting element E to the metal reflective layer 12 is reflected again by the metal reflective layer L2a. As a result, the amount of light received by the light-receiving element P is significantly thicker than that of the photocoupler shown in FIG. result,
Photocoupler switching can be operated more reliably.

〔発明の効果〕〔Effect of the invention〕

以上の通り、本発明のフォトカプラーによれば、同一基
板上に発光素子と受光素子を形成しており、これにより
、画素子にそれぞれ個別に基板を用いる必要がなくなる
と共に画素子に介在する電気絶縁体を不要とし、その結
果、製造工程を簡略化させて製造コストを低減させるこ
とができ、更にフォトカプラーの小型化が達成できる。
As described above, according to the photocoupler of the present invention, the light emitting element and the light receiving element are formed on the same substrate, which eliminates the need to use separate substrates for each pixel element and An insulator is not required, and as a result, the manufacturing process can be simplified, manufacturing costs can be reduced, and the photocoupler can be made smaller.

尚、本発明は上記実施例に限定されるものではなく、本
発明の要旨を逸脱しない範囲において種々の変更、改良
笠な何等差支えない。
Incidentally, the present invention is not limited to the above embodiments, and various changes and improvements may be made without departing from the gist of the present invention.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例に用いられたフォトカプラーの
説明図、第2図は他の実施例として用いられたフォトカ
プラーの説明図である。 l・・・透明基板  E・・・発光素子P・・・受光素
子  12.12a・・金属反射層特許出願人 (66
3)京セラ株式会社同   河村 孝夫
FIG. 1 is an explanatory diagram of a photocoupler used in an embodiment of the present invention, and FIG. 2 is an explanatory diagram of a photocoupler used as another embodiment. l...Transparent substrate E...Light emitting element P...Light receiving element 12.12a...Metal reflective layer Patent applicant (66
3) Takao Kawamura, Kyocera Corporation

Claims (1)

【特許請求の範囲】[Claims] 透明基板の第1板面に発光素子と受光素子を形成すると
共に、この透明基板の第1板面と対向する第2板面に、
発光素子が投光した光を反射させ且つこの反射光が受光
素子で受光し得るようにした反射手段を形成したことを
特徴とするフォトカプラー。
A light emitting element and a light receiving element are formed on the first plate surface of the transparent substrate, and a second plate surface facing the first plate surface of the transparent substrate,
A photocoupler comprising a reflecting means that reflects light projected by a light emitting element and allows the reflected light to be received by a light receiving element.
JP13136086A 1986-06-05 1986-06-05 Photo coupler Expired - Fee Related JPH0797656B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13136086A JPH0797656B2 (en) 1986-06-05 1986-06-05 Photo coupler

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13136086A JPH0797656B2 (en) 1986-06-05 1986-06-05 Photo coupler

Publications (2)

Publication Number Publication Date
JPS62287673A true JPS62287673A (en) 1987-12-14
JPH0797656B2 JPH0797656B2 (en) 1995-10-18

Family

ID=15056104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13136086A Expired - Fee Related JPH0797656B2 (en) 1986-06-05 1986-06-05 Photo coupler

Country Status (1)

Country Link
JP (1) JPH0797656B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6031251A (en) * 1993-06-07 2000-02-29 Motorola, Inc. Linear integrated optocoupler and method for forming the same
JP2020507086A (en) * 2017-01-25 2020-03-05 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ Optical detector for particles

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57104279A (en) * 1980-12-19 1982-06-29 Fujitsu Ltd Photo isolator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57104279A (en) * 1980-12-19 1982-06-29 Fujitsu Ltd Photo isolator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6031251A (en) * 1993-06-07 2000-02-29 Motorola, Inc. Linear integrated optocoupler and method for forming the same
JP2020507086A (en) * 2017-01-25 2020-03-05 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ Optical detector for particles

Also Published As

Publication number Publication date
JPH0797656B2 (en) 1995-10-18

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