JPH06291363A - Photocoupler - Google Patents
PhotocouplerInfo
- Publication number
- JPH06291363A JPH06291363A JP7559593A JP7559593A JPH06291363A JP H06291363 A JPH06291363 A JP H06291363A JP 7559593 A JP7559593 A JP 7559593A JP 7559593 A JP7559593 A JP 7559593A JP H06291363 A JPH06291363 A JP H06291363A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photocoupler
- light emitting
- side wall
- wall surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、発光素子と受光素子を
光結合してなるフォトカプラに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photocoupler in which a light emitting element and a light receiving element are optically coupled.
【０００２】[0002]
【従来の技術】図８は、従来最も一般的に利用されてい
るフォトカプラの断面図である。従来のフォトカプラ
は、金属リードフレーム１，２の先端に、赤外発光ダイ
オード等の発光素子３と、フォトトランジスタ等の受光
素子４とをそれぞれ銀ペースト等でダイボンドし、その
後、Ａｕワイヤー等のボンディングワイヤーでワイヤー
ボンドが施され、その後、両素子３，４は相対向する位
置に配置される。2. Description of the Related Art FIG. 8 is a cross-sectional view of a photocoupler most commonly used in the past. In a conventional photocoupler, a light emitting element 3 such as an infrared light emitting diode and a light receiving element 4 such as a phototransistor are die-bonded to the tips of the metal lead frames 1 and 2 with a silver paste or the like, and then an Au wire or the like is used. Wire bonding is performed with a bonding wire, and then both elements 3 and 4 are arranged at positions facing each other.
【０００３】また、前記発光素子３及び受光素子４間の
対向間隔部には、両素子３，４間の光結合を確保するた
め、エポキシ樹脂等の透光性樹脂５を充填し、更に該透
光性樹脂５の外周を外乱光を遮断するために黒色エポキ
シ樹脂等の遮光性樹脂６にてモールドされてなる構造で
ある。A transparent resin 5 such as an epoxy resin is filled in a facing space between the light emitting element 3 and the light receiving element 4 in order to secure optical coupling between the elements 3 and 4, and further, This is a structure in which the outer periphery of the light-transmissive resin 5 is molded with a light-shielding resin 6 such as a black epoxy resin in order to block ambient light.
【０００４】このような構造からなるフォトカプラで
は、発光素子３と受光素子４との間隔が比較的大きいた
めに光の損出があり、フォトカプラの高感度化、即ち発
光素子３を低電流で駆動することが困難であるという欠
点があった。In the photocoupler having such a structure, light is lost because the distance between the light emitting element 3 and the light receiving element 4 is relatively large, so that the photocoupler has high sensitivity, that is, the light emitting element 3 has a low current. It had the drawback of being difficult to drive with.
【０００５】その為、上記構造に対し、両素子間を小さ
くすることにより光利用効率を向上し、高感度化を試み
たフォトカプラを図９に示す。該フォトカプラは、受光
素子４上にメサ部７を有する発光素子３を積層し、両素
子３，４間をガラス等の透明絶縁層８により電気的に絶
縁させることで、両素子３，４間を短くとり、光利用効
率を向上させていた。Therefore, FIG. 9 shows a photocoupler in which the space between both elements is reduced to improve the light utilization efficiency and increase the sensitivity in the above structure. In the photocoupler, a light emitting element 3 having a mesa portion 7 is laminated on a light receiving element 4, and the elements 3 and 4 are electrically insulated from each other by a transparent insulating layer 8 such as glass. The interval was shortened to improve the light utilization efficiency.
【０００６】前記メサ部７は、側壁面が前記メサ部７の
上面及び底面に対し垂直であり、前記上面及び底面間に
Ｐ−Ｎ接合部を有するものである。The mesa portion 7 has a side wall surface perpendicular to the upper surface and the bottom surface of the mesa portion 7, and has a PN junction between the upper surface and the bottom surface.
【０００７】[0007]
【発明が解決しようとする課題】ところが、図９に示す
フォトカプラは、発光素子３からの放射光が受光素子４
の存在する下方以外にも放射されるため、前記放射光の
大部分が前記受光素子４に到達することなく外部へ放射
され、大きなロスを生じている。すなわち、前記放射光
が受光素子４の存在する下方へ放射される割合が低く、
光利用効率を大きく改善することができなかった。However, in the photocoupler shown in FIG. 9, the light emitted from the light emitting element 3 is received by the light receiving element 4.
Since most of the radiated light is radiated to the outside without reaching the light receiving element 4, a large loss occurs because it is also radiated to other than the lower part where there is. That is, the ratio of the emitted light emitted to the lower side where the light receiving element 4 exists is low,
The light utilization efficiency could not be improved significantly.
【０００８】本発明は、上記課題に鑑み、光利用効率の
大幅な向上が図れるフォトカプラを提供することを目的
とするものである。In view of the above problems, it is an object of the present invention to provide a photocoupler that can significantly improve the light utilization efficiency.
【０００９】[0009]
【課題を解決するための手段】本発明のフォトカプラ
は、発光素子及び受光素子が厚み方向に積層され、さら
に前記発光素子及び受光素子が樹脂封止されたフォトカ
プラにおいて、前記発光素子はメサ部にＰ−Ｎ接合部を
有し、前記メサ部の側壁面と上面との内角が鈍角をなす
よう、前記側壁面を傾斜させてなることを特徴とするも
のである。A photocoupler of the present invention is a photocoupler in which a light emitting element and a light receiving element are laminated in a thickness direction, and the light emitting element and the light receiving element are resin-sealed. The side wall surface is inclined so that the inner angle between the side wall surface and the upper surface of the mesa portion forms an obtuse angle, and the side wall surface is inclined.
【００１０】さらに、請求項１記載のフォトカプラにお
いて、少なくとも、前記メサ部の側壁面に光反射膜を形
成したことを特徴とするものである。Further, in the photocoupler according to claim 1, a light reflecting film is formed on at least a side wall surface of the mesa portion.
【００１１】[0011]
【作用】このようにフォトカプラにおいて、発光素子は
メサ部にＰ−Ｎ接合部を有し、前記メサ部の側壁面と上
面との内角が鈍角をなすよう、前記側壁面を傾斜させて
なる構成なので、前記Ｐ−Ｎ接合部で発生する光のうち
のＰ−Ｎ接合面と平行又は平行に近い光を、傾斜した側
壁面で下方へ反射することができる。従って、受光素子
の受光光量が増加し、光利用効率を大幅に向上できる。As described above, in the photocoupler, the light emitting element has the P-N junction portion in the mesa portion, and the side wall surface is inclined so that the interior angle between the side wall surface and the upper surface of the mesa portion is an obtuse angle. Due to the configuration, of the light generated at the PN junction, light parallel or nearly parallel to the PN junction surface can be reflected downward by the inclined side wall surface. Therefore, the amount of light received by the light receiving element is increased, and the light utilization efficiency can be significantly improved.
【００１２】また、少なくとも、前記メサ部の側壁面に
光反射膜を形成したことにより、Ｐ−Ｎ接合部から前記
側壁面に向けて放射された光を、高効率で下方へ反射す
ることができる。従って、更に光利用効率を向上でき
る。Further, since the light reflecting film is formed on at least the side wall surface of the mesa portion, the light radiated from the PN junction toward the side wall surface can be reflected downward with high efficiency. it can. Therefore, the light utilization efficiency can be further improved.
【００１３】[0013]
【実施例】図１は、本発明の一実施例を示す図であり、
同図（ａ）は正面断面図であり、同図（ｂ）は上面側か
らの透視図である。本実施例のフォトカプラは、図１の
如く、表面に配線電極１１を有する凹型ケース１２の凹
部に、前記配線電極１１を介してフォトトランジスタ等
の受光素子１３がダイボンドされ、さらに、前記受光素
子１３の受光面上に透光性のエポキシ樹脂シート等の絶
縁層１４を介して発光ダイオード等の発光素子１５が搭
載され、封止樹脂１６により封止されてなる構成であ
る。FIG. 1 is a view showing an embodiment of the present invention,
The figure (a) is a front sectional view, and the figure (b) is a perspective view from the upper surface side. In the photocoupler of this embodiment, as shown in FIG. 1, a light receiving element 13 such as a phototransistor is die-bonded to the concave portion of a concave case 12 having a wiring electrode 11 on the surface via the wiring electrode 11, and further the light receiving element is formed. A light emitting element 15 such as a light emitting diode is mounted on the light receiving surface of 13 through an insulating layer 14 such as a translucent epoxy resin sheet, and is sealed with a sealing resin 16.
【００１４】前記発光素子１５はメサ部１７を有し、該
メサ部１７は側壁面と上面との内角が鈍角をなすよう、
前記メサ部１７の側壁面４面のうちの左右２面を傾斜さ
せ、正面視略台形状に形成され、かつＰ−Ｎ接合部が前
記メサ部１７底面及び上面間に形成してなるものであ
る。The light emitting element 15 has a mesa portion 17, and the mesa portion 17 has an obtuse internal angle between the side wall surface and the upper surface.
The left and right sides of the four side wall surfaces of the mesa portion 17 are inclined to form a substantially trapezoidal shape in a front view, and a PN junction is formed between the bottom surface and the top surface of the mesa portion 17. is there.
【００１５】上記構成のフォトカプラは、例えば図２に
示すように形成される。まず、図２（ａ）の如く、Ｎ−
ＧａＡｓ基板１８上にＮ−ＧａＡｓ層１９及びＰ−Ｇａ
Ａｓ層２０を順次液層エピタキシャル成長法によって形
成する。The photocoupler having the above structure is formed, for example, as shown in FIG. First, as shown in FIG.
N-GaAs layer 19 and P-Ga are formed on the GaAs substrate 18.
The As layer 20 is sequentially formed by the liquid layer epitaxial growth method.
【００１６】次に、図２（ｂ）の如く、前記Ｐ−ＧａＡ
ｓ層２０の一部をケミカルエッチングにて前記Ｎ−Ｇａ
Ａｓ層１９まで達するようメサエッチングを行い、メサ
部１７を形成する。これにより、Ｐ−Ｎ接合部は前記メ
サ部１７の底面及び上面間に形成される。ここで、前記
メサ部１７は、該メサ部１７の側壁面と上面との内角が
鈍角をなすよう、前記メサ部１７の側壁面４面のうちの
対向する左右２面を傾斜させる。この時、前記メサ部１
７の傾斜する左右２面の側壁面と上面との内角を１３５
度±１５度になるようエッチング条件を設定すると、前
記メサ部１７の側壁面は、光の反射面としてより効率的
に作用する。また、前記ケミカルエッチングの代わり
に、ダイシングで機械的にメサ形状に加工し、機械的加
工により露出した面を軽くエッチングしてダメージ層を
取ると同時に平滑状態にして前記メサ部１７を形成する
方法もある。Next, as shown in FIG. 2B, the P-GaA is used.
A portion of the s layer 20 is chemically etched to form the N-Ga layer.
Mesa etching is performed to reach the As layer 19 to form the mesa portion 17. As a result, the P-N junction is formed between the bottom surface and the top surface of the mesa portion 17. Here, the mesa portion 17 inclines two opposing left and right surfaces of the four side wall surfaces of the mesa portion 17 so that the inner angle between the side wall surface and the upper surface of the mesa portion 17 forms an obtuse angle. At this time, the mesa 1
The inner angle between the upper and lower two side wall surfaces of the inclined 7 is 135
When the etching condition is set to be ± 15 degrees, the side wall surface of the mesa portion 17 more efficiently acts as a light reflecting surface. Further, instead of the chemical etching, a method of mechanically processing into a mesa shape by dicing, lightly etching the exposed surface by mechanical processing to remove a damaged layer, and at the same time smoothing the surface, the mesa portion 17 is formed. There is also.
【００１７】次に、図２（ｃ）の如く、前記メサエッチ
ングにより露出したＮ−ＧａＡｓ層１９上、及びＰ−Ｇ
ａＡｓ層２０上に電極を形成し、個々のチップに分割さ
れ、発光素子１５が形成される。Next, as shown in FIG. 2C, on the N-GaAs layer 19 exposed by the mesa etching and on the P-G.
An electrode is formed on the aAs layer 20 and divided into individual chips to form the light emitting element 15.
【００１８】次に、図２（ｄ）の如く、受光素子１３上
に絶縁層１４を接着し、さらにその上に上記発光その１
５が接着される。Next, as shown in FIG. 2 (d), an insulating layer 14 is adhered on the light receiving element 13, and the light emission part 1 is further formed thereon.
5 is glued.
【００１９】その後、前記受光素子１３の裏面が凹型ケ
ース（図示せず）の配線電極上にダイボンドされ、封止
樹脂により封止されて完成品となる。尚、図２（ｅ）は
２（ｃ）における発光素子１５の拡大平面図である。Thereafter, the back surface of the light receiving element 13 is die-bonded onto the wiring electrodes of the concave case (not shown) and sealed with a sealing resin to complete the product. 2 (e) is an enlarged plan view of the light emitting element 15 in 2 (c).
【００２０】このように、本発明のフォトカプラは、発
光素子１５のメサ部１７の側壁面と上面との内角が鈍角
をなすよう、前記側壁面を傾斜させてなる構成なので、
従来利用することのできなかったＰ−Ｎ接合面と平行方
向及び平行方向に近い光を、傾斜したメサ部１７の側壁
面で下方へ反射させ、受光素子１３で受光することがで
きる。従って、受光素子１３の受光光量が増加し、光利
用効率を大幅に向上できる。As described above, the photocoupler of the present invention has a structure in which the side wall surface is inclined so that the interior angle between the side wall surface and the upper surface of the mesa portion 17 of the light emitting element 15 forms an obtuse angle.
The light parallel to the PN junction surface and the light close to the parallel direction, which cannot be used conventionally, can be reflected downward by the side wall surface of the inclined mesa portion 17 and can be received by the light receiving element 13. Therefore, the amount of light received by the light receiving element 13 increases, and the light utilization efficiency can be significantly improved.
【００２１】図３は他の実施例を示す図であり、同図
（ａ）は正面図であり、同図（ｂ）は上面図である。
尚、図３は本発明のフォトカプラにおける発光素子のみ
図示する。本実施例について、図１に示す実施例と相違
する点のみ説明する。本実施例のフォトカプラは、発光
素子１５のメサ部１７における側壁面４面を凹状の弧形
状に傾斜させてなるものである。この構成は、図１に示
す実施例に対し、更に光をより効率良く下方へ反射する
ことができる。3A and 3B are views showing another embodiment, in which FIG. 3A is a front view and FIG. 3B is a top view.
Note that FIG. 3 illustrates only the light emitting element in the photocoupler of the present invention. This embodiment will be described only on the points different from the embodiment shown in FIG. The photocoupler of this embodiment is one in which the four side wall surfaces of the mesa portion 17 of the light emitting element 15 are inclined in a concave arc shape. This structure can more efficiently reflect light downward as compared with the embodiment shown in FIG.
【００２２】図４は更に他の実施例を示す図であり、同
図（ａ）は正面図であり、同図（ｂ）は上面図である。
図４においても、発光素子のみ図示する。本実施例につ
いて、図１に示す実施例と相違する点のみ説明する。本
実施例のフォトカプラは、メサ部１７が半球状の側面視
略だ円状に形成され、上面を平面としてなるものであ
る。この構造は、図３に示す実施例に対し、更に光をよ
り効率よく下方へ反射できる。FIGS. 4A and 4B are views showing still another embodiment. FIG. 4A is a front view and FIG. 4B is a top view.
Also in FIG. 4, only the light emitting element is illustrated. This embodiment will be described only on the points different from the embodiment shown in FIG. In the photocoupler of this embodiment, the mesa portion 17 is formed in a semispherical elliptical shape in a side view, and the upper surface thereof is a flat surface. This structure can more efficiently reflect light downward as compared with the embodiment shown in FIG.
【００２３】図５に更に他の実施例を示す正面図であ
る。本実施例について、図１及び図２に示す実施例と相
違する点のみ説明する。本実施例のフォトカプラは、図
５の如く、図２（ｄ）に示すメサ部１７の側壁面及び電
極形成部以外の上面に光反射膜２１を形成してなるもの
である。該光反射膜２１は、発光素子１５の発光ピーク
波長をλpとすると、例えばＳｉＯ2 ／ＴｉＯ2 の各光
学的膜厚（ｎｄ：屈折率×膜厚）をλp／４ｎｍにし、
４対蒸着により重ねた誘電体多層膜で構成される。FIG. 5 is a front view showing still another embodiment. In this embodiment, only the points different from the embodiment shown in FIGS. 1 and 2 will be described. As shown in FIG. 5, the photocoupler of the present embodiment has a light reflection film 21 formed on the sidewall surface of the mesa 17 shown in FIG. Assuming that the light emission peak wavelength of the light emitting element 15 is λ p , the light reflection film 21 has, for example, each optical film thickness (nd: refractive index x film thickness) of SiO 2 / TiO 2 is λ p / 4 nm,
It is composed of dielectric multilayer films stacked by four pairs of vapor deposition.
【００２４】このように、メサ部１７の側壁面及び電極
形成部以外の上面に光反射膜２１を形成したことによ
り、Ｐ−Ｎ接合部から上面及び側壁面に向けて放射され
た光を、高効率で下方へ反射させることができる。従っ
て、受光素子１３の受光光量を増加でき、光利用効率を
向上できる。As described above, since the light reflection film 21 is formed on the side wall surface of the mesa portion 17 and the upper surface other than the electrode forming portion, the light emitted from the P-N junction portion toward the upper surface and the side wall surface is It can reflect downward with high efficiency. Therefore, the amount of light received by the light receiving element 13 can be increased, and the light utilization efficiency can be improved.
【００２５】本実施例は、図３及び図４に示す実施例に
おいても同様に、光反射膜２１を形成することにより同
様の効果が得られることは勿論である。In the present embodiment, the same effect can be obtained by forming the light reflecting film 21 in the embodiment shown in FIGS. 3 and 4 as well.
【００２６】上記図１及び図２に示す実施例において、
図６の如く、発光素子１５の裏面に反射防止膜２２を形
成することにより発光素子１５及び絶縁層１４間に反射
防止膜２２を形成するものである。該反射防止膜２２
は、例えばＴｉＯ2を光学的膜厚（ｎｄ）がλp／４ｎｍ
になるよう蒸着にて形成される。In the embodiment shown in FIGS. 1 and 2 above,
As shown in FIG. 6, the antireflection film 22 is formed on the back surface of the light emitting element 15 to form the antireflection film 22 between the light emitting element 15 and the insulating layer 14. The antireflection film 22
Is, for example, TiO 2 having an optical film thickness (nd) of λ p / 4 nm
Is formed by vapor deposition.
【００２７】このように、前記発光素子１５及び絶縁層
１４間に反射防止膜２２を形成したことにより、前記発
光素子１５及び絶縁層１４間の界面での光の反射を減ら
し、受光素子１３への到達光量を大幅に改善できる。従
って、光利用効率を更に向上できる。As described above, since the antireflection film 22 is formed between the light emitting element 15 and the insulating layer 14, the reflection of light at the interface between the light emitting element 15 and the insulating layer 14 is reduced, and the light receiving element 13 is transmitted to the light receiving element 13. The amount of light reaching can be greatly improved. Therefore, the light utilization efficiency can be further improved.
【００２８】また、上記図３及び図４並びに図５に示す
実施例においても同様に、反射防止膜２２を形成するこ
とにより同様の効果が得られることは勿論である。Also in the embodiments shown in FIGS. 3 and 4 and FIG. 5, it is needless to say that the same effect can be obtained by forming the antireflection film 22.
【００２９】尚、本発明は、上記実施例に限定されるも
のではなく、本発明の範囲内で、上記実施例に多くの修
正及び変更を加え得ることは勿論である。The present invention is not limited to the above embodiment, and it goes without saying that many modifications and changes can be made to the above embodiment within the scope of the present invention.
【００３０】例えば、図７の如く、図１に示すフォトカ
プラの他のパッケージング例として、凹型ケース１２の
代わりに金属性のリードフレーム２３を用い、該リード
フレーム２３上に受光素子１３、絶縁層１４、発光素子
１５を順次積層し、封止樹脂１６にて封止してなる構成
がある。For example, as shown in FIG. 7, as another packaging example of the photocoupler shown in FIG. 1, a metallic lead frame 23 is used in place of the concave case 12, and the light receiving element 13 and the insulation are provided on the lead frame 23. There is a configuration in which the layer 14 and the light emitting element 15 are sequentially laminated and sealed with a sealing resin 16.
【００３１】[0031]
【発明の効果】以上のように、本発明のフォトカプラに
よれば、発光素子はメサ部にＰ−Ｎ接合部を有し、前記
メサ部の側壁面と上面との内角が鈍角をなすよう、前記
側壁面を傾斜させてなる構成なので、Ｐ−Ｎ接合部で発
生する光のうちのＰ−Ｎ接合面と平行又は平行に近い光
は、傾斜した側壁面で下方へ反射される。従って、受光
素子の受光光量が増加し、光利用効率が大幅に向上され
る。As described above, according to the photocoupler of the present invention, the light emitting element has the P-N junction portion in the mesa portion, and the side wall surface and the upper surface of the mesa portion form an obtuse angle. Since the side wall surface is inclined, the light generated in the PN junction is parallel or nearly parallel to the PN junction surface, and is reflected downward by the inclined side wall surface. Therefore, the amount of light received by the light receiving element is increased, and the light utilization efficiency is significantly improved.
【００３２】また、少なくとも、前記メサ部の側壁面に
光反射膜を形成したことにより、Ｐ−Ｎ接合部から側壁
面に向けて放射された光は、高効率で下方に反射され
る。従って、更に光利用効率が向上される。Further, since the light reflecting film is formed on at least the side wall surface of the mesa portion, the light emitted from the PN junction toward the side wall surface is reflected downward with high efficiency. Therefore, the light utilization efficiency is further improved.
【図１】本発明の一実施例を示す図であり、図（ａ）は
正面断面図であり、図（ｂ）は上面側からの透視図であ
る。FIG. 1 is a view showing an embodiment of the present invention, FIG. 1 (a) is a front sectional view, and FIG. 1 (b) is a perspective view from the upper surface side.
【図２】図１に示すフォトカプラの製造工程図である。FIG. 2 is a manufacturing process diagram of the photocoupler shown in FIG.
【図３】本発明の他の実施例を示す図であり、図（ａ）
は正面図であり、図（ｂ）は平面図である。FIG. 3 is a diagram showing another embodiment of the present invention, FIG.
Is a front view, and FIG. 6B is a plan view.
【図４】本発明の更に他の実施例を示す図であり、図
（ａ）は正面図であり、図（ｂ）は平面図である。4A and 4B are views showing still another embodiment of the present invention, in which FIG. 4A is a front view and FIG. 4B is a plan view.
【図５】本発明の更に他の実施例を示す正面図である。FIG. 5 is a front view showing still another embodiment of the present invention.
【図６】図１に示す発光素子の裏面に反射防止膜を形成
した場合の正面図である。6 is a front view when an antireflection film is formed on the back surface of the light emitting device shown in FIG.
【図７】図１に示すフォトカプラの他のパッケージング
例であり、図（ａ）は正面側からの透視図であり、図
（ｂ）は樹脂封止前の斜視図である。7 is another packaging example of the photocoupler shown in FIG. 1, FIG. 7 (a) is a perspective view from the front side, and FIG. 7 (b) is a perspective view before resin sealing.
【図８】従来例を示す図である。FIG. 8 is a diagram showing a conventional example.
【図９】他の従来例を示す図である。FIG. 9 is a diagram showing another conventional example.
１３ 受光素子 １５ 発光素子 １７ メサ部 ２１ 光反射膜 13 light receiving element 15 light emitting element 17 mesa 21 light reflecting film
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成５年４月７日[Submission date] April 7, 1993
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】図面[Document name to be corrected] Drawing
【補正対象項目名】図４[Name of item to be corrected] Figure 4
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【図４】 [Figure 4]
Claims (2)
され、さらに前記発光素子及び受光素子が樹脂封止され
たフォトカプラにおいて、前記発光素子はメサ部にＰ−
Ｎ接合部を有し、前記メサ部の側壁面と上面との内角が
鈍角をなすよう、前記側壁面を傾斜させてなることを特
徴とするフォトカプラ。1. A photocoupler in which a light emitting element and a light receiving element are laminated in a thickness direction, and the light emitting element and the light receiving element are resin-sealed, wherein the light emitting element is a P-type mesa portion.
A photocoupler having an N-junction portion, wherein the side wall surface is inclined such that an inner angle between the side wall surface and the upper surface of the mesa portion is an obtuse angle.
射膜を形成したことを特徴とする請求項１記載のフォト
カプラ。2. The photocoupler according to claim 1, wherein a light reflecting film is formed on at least a side wall surface of the mesa portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7559593A JP2981361B2 (en) | 1993-04-01 | 1993-04-01 | Photo coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7559593A JP2981361B2 (en) | 1993-04-01 | 1993-04-01 | Photo coupler |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06291363A true JPH06291363A (en) | 1994-10-18 |
| JP2981361B2 JP2981361B2 (en) | 1999-11-22 |
Family
ID=13580717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7559593A Expired - Fee Related JP2981361B2 (en) | 1993-04-01 | 1993-04-01 | Photo coupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2981361B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014063927A (en) * | 2012-09-21 | 2014-04-10 | Toshiba Corp | Optical coupling device and semiconductor light-emitting element |
| US20140284629A1 (en) * | 2013-03-22 | 2014-09-25 | Kabushiki Kaisha Toshiba | Photocoupler |
| JP2015056531A (en) * | 2013-09-12 | 2015-03-23 | 株式会社東芝 | Mounting member and optical coupling device |
| JP2015195401A (en) * | 2015-07-14 | 2015-11-05 | 株式会社東芝 | Optical coupling device |
-
1993
- 1993-04-01 JP JP7559593A patent/JP2981361B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014063927A (en) * | 2012-09-21 | 2014-04-10 | Toshiba Corp | Optical coupling device and semiconductor light-emitting element |
| US9070817B2 (en) | 2012-09-21 | 2015-06-30 | Kabushiki Kaisha Toshiba | Photocoupler and semiconductor light emitting element |
| US20140284629A1 (en) * | 2013-03-22 | 2014-09-25 | Kabushiki Kaisha Toshiba | Photocoupler |
| JP2014187210A (en) * | 2013-03-22 | 2014-10-02 | Toshiba Corp | Optical coupling device |
| US9450134B2 (en) | 2013-03-22 | 2016-09-20 | Kabushiki Kaisha Toshiba | Photocoupler |
| JP2015056531A (en) * | 2013-09-12 | 2015-03-23 | 株式会社東芝 | Mounting member and optical coupling device |
| JP2015195401A (en) * | 2015-07-14 | 2015-11-05 | 株式会社東芝 | Optical coupling device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2981361B2 (en) | 1999-11-22 |
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