JPS60241279A - Optoelectronic coupling element and method of producing same - Google Patents
Optoelectronic coupling element and method of producing sameInfo
- Publication number
- JPS60241279A JPS60241279A JP60096149A JP9614985A JPS60241279A JP S60241279 A JPS60241279 A JP S60241279A JP 60096149 A JP60096149 A JP 60096149A JP 9614985 A JP9614985 A JP 9614985A JP S60241279 A JPS60241279 A JP S60241279A
- Authority
- JP
- Japan
- Prior art keywords
- light
- plastic
- coupling element
- container
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008878 coupling Effects 0.000 title claims description 21
- 238000010168 coupling process Methods 0.000 title claims description 21
- 238000005859 coupling reaction Methods 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 3
- 230000005693 optoelectronics Effects 0.000 title description 3
- 229920003023 plastic Polymers 0.000 claims description 26
- 239000004033 plastic Substances 0.000 claims description 19
- 239000003822 epoxy resin Substances 0.000 claims description 9
- 229920000647 polyepoxide Polymers 0.000 claims description 9
- 238000007598 dipping method Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims 1
- 239000012778 molding material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229920006336 epoxy molding compound Polymers 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000260 silastic Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、発光及び受光側半導体素子を有し、これらの
画素子が相互に分離されて支持体上に取付けられておシ
かっ光透過性プラスチックによって包被されでいる構造
のオシドエレクトロニック結合素子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention has a light-emitting and light-receiving semiconductor element, and these pixel elements are separated from each other, mounted on a support, and covered with a light-transmitting plastic. This invention relates to an oxidation electronic coupling device having a structure.
従来の技術
オシドエレクトロニック結合素子は、電気信号を光信号
を介して送信器回路から、この回路に対して完全に分離
されておシ、ひいては電気的に絶縁されている受信器回
路に伝送するために使用される。オシドエレクトロニッ
ク結合−X子は、例えば構内交換機の電話接続及びデー
タ処理において電圧分離及び妨害安全性の増大のために
使用される。また該結合素子は、トライアック及びサイ
リスタを駆動する場合の入出力エレクトロニクスにおけ
る制御及び負荷回路の電圧分離のためにも使用される。Prior art oscido-electronic coupling elements transmit electrical signals via optical signals from a transmitter circuit to a receiver circuit that is completely separate and electrically isolated from this circuit. used for. Oside electronic coupling-X elements are used for voltage isolation and increased interference safety, for example in telephone connections and data processing in private branch exchanges. The coupling elements are also used for voltage isolation of control and load circuits in input/output electronics when driving triacs and thyristors.
オシドエレクトロニック結合素子の公知製造方法の場合
、送信及び受信画半導体素子は、つながりのある構造化
された接触細長片の、限定された間隔を置いて隣接され
た部分上の一平面に固定される。次に2個の前記素子の
上にプラスチック反射物体がかぶせられ、画素子と反射
物体との間隙が接触端子も包囲する光透過性グラスチッ
クで充填される。次に反射物体と光透過性プラスチック
とが一体となって外部容器を形成する光透過性プラスチ
ック内に埋め込まれる。最後に接触細長片を結合してい
るウェブが分離される。In the known method for producing oscido-electronic coupling elements, the transmitting and receiving pixel semiconductor elements are fixed in one plane on adjacent portions at a limited distance of a continuous structured contact strip. Ru. A plastic reflective object is then placed over the two said elements, and the gap between the pixel elements and the reflective object is filled with a light-transmissive glasstic that also surrounds the contact terminals. The reflective object and the light transmissive plastic are then embedded within the light transmissive plastic which together form the outer container. Finally, the web connecting the contact strips is separated.
前記種類の結合素子の場合側半導体素子は、例えば発光
ダイオ−r及びフォトトランジスタから構成されている
。またフォトトランジスタの代シにフォト電界効果トラ
ンジスタ、フォトダイオード又は他の感光半導体素子又
は感光集積回路も使用することがfきる。The case-side semiconductor elements of the aforementioned type of coupling element are composed of, for example, a light-emitting diode and a phototransistor. It is also possible to use photo field effect transistors, photodiodes or other photosensitive semiconductor elements or photosensitive integrated circuits instead of phototransistors.
公知のオシドエレクトロニック結合素子は成程高い絶縁
電圧を有するが、しかしハイブリ・ラド技法におけるミ
ニチュア化、特にフィルム回路用には適当ではない、そ
れというのも容器寸法がその構造のために比較的大きい
からである。The known oscidoelectronic coupling elements have reasonably high dielectric voltages, but are not suitable for miniaturization in hybrid-rad technology, especially for film circuits, since the package dimensions are relatively small due to their construction. It's because it's big.
発明の解決しようとする問題点
従って本発明は、より一層小さい寸法を有しかつハイブ
リッP接続回路において使用するのに適したオシドエレ
クトロニック結合素子及びその製造方法を提供するとい
う課題を基礎とする。Problem to be Solved by the Invention The invention is therefore based on the problem of providing an oscido-electronic coupling element having smaller dimensions and suitable for use in hybrid P-connection circuits, and a method for its production. .
前記課題は、発光及び受光側半導体素子を有し、これら
の画素子が支持体上で相互に分離されて配置されておシ
かり光透過性グラスチックによって包被されている構造
のオシドエレクトロニック結合素子の場合、本発明によ
シ、光透過性グラスチックがオシドエレクトロニック結
合素子の容器を形成しかつ光不透過性反射材料から成る
薄層で被覆されていることによって解決される。The above-mentioned problem is an oscilloscope electronic device having a structure in which a light-emitting and light-receiving semiconductor element is provided, and these pixel elements are separated from each other on a support and are covered with a light-transmitting glass. In the case of a coupling element, the solution according to the invention is that a light-transparent glass forms the container of the oscidoelectronic coupling element and is coated with a thin layer of a light-impermeable reflective material.
従って本発明の本質は、該容器が実際に光透過性プラス
チックによってのみ形成されかつ同シラスチックによっ
て容器にとって必要な機械的安定性が得られ、他方反射
層はできるだけ薄くなければならず、実際に容器の機械
的安定性のためには役立たない点にある。反射層は、同
層の厚さが同層の反射機能を十分満足させうるようにf
きるだけ薄いことが請求されている。The essence of the invention is therefore that the container is actually made only of light-transparent plastic and that the same plastic provides the necessary mechanical stability for the container, while the reflective layer must be as thin as possible and practically It is of no use for the mechanical stability of the container. The reflective layer has a thickness of f such that the thickness of the layer can sufficiently satisfy the reflective function of the layer.
The bill is as thin as possible.
本発明の有利な他の実施態様によれば、高い結合効率を
得るために、小形化されたグラスチック容器が浸漬法に
よって軟質エポキシ樹脂より成る光反射性プラスチック
層で被覆されることが意図されている。According to another advantageous embodiment of the invention, it is provided that, in order to obtain a high coupling efficiency, the miniaturized plastic container is coated by a dipping method with a light-reflecting plastic layer consisting of a soft epoxy resin. ing.
両生導体素子は有利には一平面上に存在する。The bidirectional conductor elements are preferably located in one plane.
他の有利な実施態様によれば、プラスチック容器表面の
全面が反射層によって被覆されておシ、この光不透過性
反射層は赤外反射性エポキシ樹脂又はエポキシ成形材料
から成シ、約0.3咽の層厚を有しかつ内部全反射を行
うことができる。According to a further advantageous embodiment, the entire surface of the plastic container is coated with a reflective layer, which light-impermeable reflective layer is made of an infrared-reflecting epoxy resin or an epoxy molding compound, and is made of an infrared-reflecting epoxy resin or an epoxy molding compound, and is made of an infrared-reflecting epoxy resin or an epoxy molding compound. It has a layer thickness of 3 times and can perform total internal reflection.
光透過性シラスチックは好ましくは透明エポキシ樹脂か
ら成っておシ、この際この包被プラスチックの大きさは
、5OT143型又はTO143型又はS06型の規格
化された立方体状ミニチュア容器に相当する。The light-transparent silastic preferably consists of a transparent epoxy resin, the size of the encapsulating plastic corresponding to a standardized cubic miniature container of the type 5OT143 or TO143 or S06.
本発明によるオプトエレクトロ二ツク結合素子は、光透
過性プラスチック容器が浸漬法又は成形法によって光不
透過性層が被覆されることによって製造される。The optoelectronic coupling element according to the invention is produced by coating a light-transparent plastic container with a light-impermeable layer by dipping or molding.
該結合素子の著しい利点は、光透過性プラスチックが(
約0.3+nmの極めて薄い反射性被覆と共に)容器を
形成し、従って光透過性プラスチックから成る別個の外
部容器が省略されうろことである。これによって容器の
寸法が著しく減少されうる。A significant advantage of the coupling element is that the optically transparent plastic (
(together with a very thin reflective coating of about 0.3+ nm) to form the container, so that a separate outer container of light-transparent plastic is omitted. This allows the dimensions of the container to be significantly reduced.
本発明によるオゾトエレクトロ二ツク&41子は、電圧
分離及び妨害安全な絶縁のためにバイブリソ−スイッチ
回路で多数使用するのに適している。さらに、容器寸法
が例えばSOT l 43型の規格化ミニチュア容器の
寸法に合うように選択される場合には、前記構成要素が
市販のビルトイン自動装置で加工することができるとい
う利点が生じる。The oztoelectronic device according to the invention is suitable for numerous uses in vibratory switch circuits for voltage isolation and interference-safe isolation. Furthermore, if the container dimensions are selected to match the dimensions of standardized miniature containers, for example of the type SOT l 43, the advantage arises that the components can be processed with commercially available built-in automatic equipment.
次に本発明を、図面による実施例によシ説明する。The present invention will now be explained by way of embodiments illustrated in the drawings.
実施例
送信半導体素子(1)及び受信半導体素子(2)の接触
のために、好ましくは、連続的・ζンド状を有しかつ製
造プロセスでは横ウェブ、外部側片及び中央ウェブを有
する接触細長片を送信素子(1)及び受信素子(2)を
光透過性プラスチック(4)で注型した後、横ウェブ、
外部側片及び中央ウェブが分離されるように切断機によ
って加工する。Embodiments For the contact of the transmitting semiconductor element (1) and the receiving semiconductor element (2), a contact elongate preferably has a continuous ζ-nd shape and in the manufacturing process has a transverse web, an outer side piece and a central web. After casting the transmitting element (1) and receiving element (2) in the piece with light-transparent plastic (4), the transverse web,
The outer side pieces and the central web are processed by a cutting machine so that they are separated.
光透過性グラスチック(4)は、第1図による実施例の
場合には透明なエポキシ樹脂から成る。The light-transparent glass (4) consists of transparent epoxy resin in the embodiment according to FIG.
送信半導体素子(1)及び受信半導体素子(2)を含む
プラスチック(4)に、浸漬法又は成形法によって光不
透過性反射層(5)を被覆させる。このようにして製造
された立方体状ミニチュア容器は規格型5OT143の
寸法、従って長さX幅×高さ−2,9x1.3xl■の
寸法を有する。The plastic (4) containing the transmitting semiconductor element (1) and the receiving semiconductor element (2) is coated with a light-impervious reflective layer (5) by dipping or molding. The cubic miniature container thus produced has the dimensions of the standard type 5OT143, ie length x width x height -2.9 x 1.3 x l.
光不透過性反射層(5)は例えば酸化チタンの混合され
た軟質エポキシ樹脂から成る。また、酸化マグネシウム
と、例えばポリカーゼネートのような透明グラスチック
との混合物によって類似の反射体を製造することもでき
る。The light-opaque reflective layer (5) is made of, for example, a soft epoxy resin mixed with titanium oxide. A similar reflector can also be produced by a mixture of magnesium oxide and a transparent glass material, such as polycarbonate.
第1図によれば折曲げることによって、送信半導体素子
(1)及び受信半導体素子(2)の電気的接続にとって
必要な接続脚3a、3b及びaa、abが作られる。According to FIG. 1, the connecting legs 3a, 3b and aa, ab necessary for the electrical connection of the transmitting semiconductor component (1) and the receiving semiconductor component (2) are created by bending.
第2図で指定した参照番号は第1図のものと同様である
。第2図によれば送信半導体素子(1)から発する光は
プラスチック(4)の全面から出ていく。The reference numbers designated in FIG. 2 are the same as in FIG. According to FIG. 2, the light emitted from the transmitting semiconductor element (1) exits from the entire surface of the plastic (4).
第3図から判るように、プラスチック(4)を浸漬して
光反射性材料(5)を被覆することによってプラスチッ
ク(4)の内部では全反射が行われ、これによって代表
的に100%の結合効率が得られる。第3図の参照数字
も第1図及び第2図のそれと同様である。As can be seen in Figure 3, by dipping the plastic (4) and coating it with a light reflective material (5), total internal reflection takes place inside the plastic (4), which typically results in 100% coupling. Gain efficiency. The reference numerals in FIG. 3 are also similar to those in FIGS. 1 and 2.
電圧分離にとって必要な、送信素子(1)と受信素子(
2)との間の絶縁電圧は少なくとも500Vである。The transmitting element (1) and receiving element (
2) the insulation voltage between the two is at least 500V;
第1図は本発明によるオプトエレクトロ二ツク結合素子
の斜視図、第2図は反射層を有しない同結合素子の断面
図、第5図は反射層を有する同結合素子の断面図である
。
1・・・送信半導体素子、2・・・受信半導体素子、牛
・・光透過性プラスチック、5・・・反射層。1 is a perspective view of an optoelectronic coupling element according to the invention, FIG. 2 is a sectional view of the coupling element without a reflective layer, and FIG. 5 is a sectional view of the coupling element with a reflective layer. DESCRIPTION OF SYMBOLS 1... Transmitting semiconductor element, 2... Receiving semiconductor element, C... Light-transmitting plastic, 5... Reflective layer.
Claims (1)
が相互に分離されて支持体上に取付けられておりかつ光
透過性プラスチックによって包被されている構造のオシ
ドエレクトロニック結合素子において、光透過性プラス
チックが、該結合素子の容器を形成しかつ光不透過性反
射材料から成る薄層で被覆されていることを特徴とする
前記オシドエレクトロニック結合素子。 − 2、両生導体素子が一平面上に存在する特許請求の範囲
第1項記載の素子。 3、プラスチック容器表面の全面が反射層によって被覆
されている特許請求の範囲第1項又は第2項記載の素子
。 屯 包被プラスチックの大きさが、5OT143型又は
TO143型又はSO6型の規格化された立方体状ミニ
チュア容器に相当する特許請求の範囲第1項から第3項
までのいずれか1項記載の素子。 5、光透過性プラスチックが透明エポキシ樹脂から成る
特許請求の範囲第1項から第4項までのいずれか1項記
載の素子。 6、光不透過性薄層が透明な赤外反射性エポキシ樹脂又
はエポキシ成形材料から成る特許請求の範囲第1項から
第5項までのいずれか1項記載の素子。 7、光不透過性薄層が約0.3+nmの層厚を有しかつ
内部全反射を生じさせる特許請求の範囲第1項から第6
項までのいずれか1項記載の素子。 8、発光及び受光両生導体素子を有し、これらの画素子
が相互に分離されて支持体上に取付けられておシかつ光
透過性プラスチックによって包被されている構造のオシ
ドエレクトロニック結合素子を製造するに当シ、光透過
性プラスチックよ構成る容器が浸漬法又は成形法によっ
て光不透過性層で被覆されることを特徴とする前記オシ
ドエレクトロニック結合素子の製造方法。[Scope of Claims] 1. An optical system having a structure that has both a light-emitting and a light-receiving conductor element, these pixel elements are separated from each other, are mounted on a support, and are covered with a light-transmitting plastic. An oscido-electronic coupling element, characterized in that a light-transparent plastic forms the container of the coupling element and is coated with a thin layer of a light-impermeable reflective material. -2. The element according to claim 1, wherein the amphibodiconductive element exists on one plane. 3. The device according to claim 1 or 2, wherein the entire surface of the plastic container is covered with a reflective layer. The device according to any one of claims 1 to 3, wherein the size of the encasing plastic corresponds to a standardized cubic miniature container of type 5OT143, type TO143, or type SO6. 5. The device according to any one of claims 1 to 4, wherein the light-transmitting plastic is made of a transparent epoxy resin. 6. The device according to any one of claims 1 to 5, wherein the light-opaque thin layer is made of a transparent infrared reflective epoxy resin or epoxy molding material. 7. Claims 1 to 6 in which the light-opaque thin layer has a layer thickness of about 0.3+nm and causes total internal reflection.
The device according to any one of the preceding items. 8. An oscido-electronic coupling element having a structure in which the pixel elements are separated from each other, are mounted on a support, and are covered with a light-transmitting plastic. A method for producing an oscidoelectronic coupling element, characterized in that during production, a container made of a light-transparent plastic is coated with a light-impermeable layer by a dipping method or a molding method.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3416918.0 | 1984-05-08 | ||
DE3416918 | 1984-05-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60241279A true JPS60241279A (en) | 1985-11-30 |
Family
ID=6235203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60096149A Pending JPS60241279A (en) | 1984-05-08 | 1985-05-08 | Optoelectronic coupling element and method of producing same |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS60241279A (en) |
FR (1) | FR2564266A1 (en) |
GB (2) | GB8511061D0 (en) |
IT (1) | IT1183568B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201031957A (en) * | 2009-02-27 | 2010-09-01 | Everlight Electronics Co Ltd | Photo-coupler |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2272377B1 (en) * | 1974-05-24 | 1977-06-24 | Texas Instruments France | |
GB1564937A (en) * | 1976-12-13 | 1980-04-16 | Tokyo Shibaura Electric Co | Optoelectronic coupler |
DE2806167C2 (en) * | 1978-02-14 | 1986-05-15 | Siemens AG, 1000 Berlin und 8000 München | High voltage resistant optocoupler |
JPS5839075A (en) * | 1981-08-31 | 1983-03-07 | Matsushita Electric Ind Co Ltd | Electronic circuit device |
-
1985
- 1985-05-01 GB GB858511061A patent/GB8511061D0/en active Pending
- 1985-05-07 GB GB08511486A patent/GB2158641A/en not_active Withdrawn
- 1985-05-07 FR FR8506955A patent/FR2564266A1/en not_active Withdrawn
- 1985-05-07 IT IT20610/85A patent/IT1183568B/en active
- 1985-05-08 JP JP60096149A patent/JPS60241279A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2158641A (en) | 1985-11-13 |
FR2564266A1 (en) | 1985-11-15 |
IT1183568B (en) | 1987-10-22 |
GB8511061D0 (en) | 1985-06-12 |
GB8511486D0 (en) | 1985-06-12 |
IT8520610A0 (en) | 1985-05-07 |
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