JPS57153465A - Manufacture of lateral transistor - Google Patents
Manufacture of lateral transistorInfo
- Publication number
- JPS57153465A JPS57153465A JP4137481A JP4137481A JPS57153465A JP S57153465 A JPS57153465 A JP S57153465A JP 4137481 A JP4137481 A JP 4137481A JP 4137481 A JP4137481 A JP 4137481A JP S57153465 A JPS57153465 A JP S57153465A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- recess
- collector
- layer
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 2
- 230000008707 rearrangement Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain a lateral transistor of high performance by a method wherein P type impurity is diffused from a recess having a vertical wall provided in an emitter.collector forming rearrangement region of N type Si substate face to form an emitter.collector. CONSTITUTION:A recess 11 having a vertical wall of 2mum in depth is formed through a reactive ion etching in the rearrangement region of an island separated with P layer 3, N epitaxial layer 2 on P type substrate 1. P type impurity layer is diffused through the recess 11 to form an emitter 4 and collector 5. In this case, it is preferable to form a P base of npn transistor in the same substrate. Subsequently, N+ base connection layer 6 is formed together with N emitter of the npn transistor and electrodes 8 through 10 are added to the foregoing components respectively. According to this constitution, the base width can be measured uniformly, a high hFe be obtained and the improvement for a high withstand voltage and high frequency property also be achieved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4137481A JPS57153465A (en) | 1981-03-17 | 1981-03-17 | Manufacture of lateral transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4137481A JPS57153465A (en) | 1981-03-17 | 1981-03-17 | Manufacture of lateral transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57153465A true JPS57153465A (en) | 1982-09-22 |
Family
ID=12606637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4137481A Pending JPS57153465A (en) | 1981-03-17 | 1981-03-17 | Manufacture of lateral transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57153465A (en) |
-
1981
- 1981-03-17 JP JP4137481A patent/JPS57153465A/en active Pending
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