JPS5796563A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5796563A
JPS5796563A JP17300580A JP17300580A JPS5796563A JP S5796563 A JPS5796563 A JP S5796563A JP 17300580 A JP17300580 A JP 17300580A JP 17300580 A JP17300580 A JP 17300580A JP S5796563 A JPS5796563 A JP S5796563A
Authority
JP
Japan
Prior art keywords
region
type
film
mask
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17300580A
Other languages
Japanese (ja)
Inventor
Tsutomu Matsuura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17300580A priority Critical patent/JPS5796563A/en
Publication of JPS5796563A publication Critical patent/JPS5796563A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To improve a writing characteristic by forming a B region into a P type insular region surrounded by a buried layer and an insulating separation region through a thin oxide film and shaping a P type region deeper than the B region while using the oxide film narrowed as a mask. CONSTITUTION:The N type buried layer 2 having high concentration is diffused to a P type substrate, an N type layer 3 is grown, and separated by P type layers 4, and an insular N type region 3' is formed. A thick oxide film 5 is shaped employing the Si nitride film 11 on the thin SiO2 layers 4 on the substrate as a mask, and the P type base region 6 is formed through the film 11. The P type region 13 deeper than the P type B region 6 is shaped through ion injection while using the SiO2 nitride film narrowed as the mask. A SiO2 film 14 shaped onto the region 13 is removed selectively while being thinned. Poly Si15 is attached to an E diffusion window section, impurities are diffused from the diffusion window section, an E region is formed, and a shallow junction is manufactured. Accordingly, the junction breakdown type PROM having an excellent writing characteristic can be produced.
JP17300580A 1980-12-08 1980-12-08 Semiconductor device and manufacture thereof Pending JPS5796563A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17300580A JPS5796563A (en) 1980-12-08 1980-12-08 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17300580A JPS5796563A (en) 1980-12-08 1980-12-08 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5796563A true JPS5796563A (en) 1982-06-15

Family

ID=15952419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17300580A Pending JPS5796563A (en) 1980-12-08 1980-12-08 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5796563A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5434485A (en) * 1991-12-09 1995-07-18 Matsushita Electric Industrial Co., Ltd. Focus circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279887A (en) * 1975-12-26 1977-07-05 Fujitsu Ltd Production of semiconductor device
JPS52114280A (en) * 1976-03-22 1977-09-24 Nec Corp Bipolar type transistor
JPS5541737A (en) * 1978-09-20 1980-03-24 Hitachi Ltd Preparation of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279887A (en) * 1975-12-26 1977-07-05 Fujitsu Ltd Production of semiconductor device
JPS52114280A (en) * 1976-03-22 1977-09-24 Nec Corp Bipolar type transistor
JPS5541737A (en) * 1978-09-20 1980-03-24 Hitachi Ltd Preparation of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5434485A (en) * 1991-12-09 1995-07-18 Matsushita Electric Industrial Co., Ltd. Focus circuit

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