JPS5759320A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5759320A
JPS5759320A JP13442580A JP13442580A JPS5759320A JP S5759320 A JPS5759320 A JP S5759320A JP 13442580 A JP13442580 A JP 13442580A JP 13442580 A JP13442580 A JP 13442580A JP S5759320 A JPS5759320 A JP S5759320A
Authority
JP
Japan
Prior art keywords
diffusion region
psg layer
psg
region
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13442580A
Other languages
Japanese (ja)
Inventor
Satoshi Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13442580A priority Critical patent/JPS5759320A/en
Publication of JPS5759320A publication Critical patent/JPS5759320A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Abstract

PURPOSE:To extend a P type diffusion region up to the prescribed depth and to enhance gettering effect in a semiconductor device by a method wherein after a PSG layer used to form the P type diffusion region shallowly is removed, a new PSG layer is provided and heat treatment is performed. CONSTITUTION:An opening is formed in an SiO2 film 2 on an Si substrate 1 being proided with a base region 3, the PSG layer is provided, and after the shallow diffusion region is formed, the PSG layer thereof is removed, then the second PSG layer 6 is provided, P in the shallow diffusion region is made to be diffused still more deeply, and an N<+> type emitter region 7 is formed. Accordingly the phosphorus diffusion region can be formed to the desired depth, and gettering effect to be generated by the PSG can be enhanced.
JP13442580A 1980-09-29 1980-09-29 Manufacture of semiconductor device Pending JPS5759320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13442580A JPS5759320A (en) 1980-09-29 1980-09-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13442580A JPS5759320A (en) 1980-09-29 1980-09-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5759320A true JPS5759320A (en) 1982-04-09

Family

ID=15128075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13442580A Pending JPS5759320A (en) 1980-09-29 1980-09-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5759320A (en)

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