JPS5283072A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5283072A
JPS5283072A JP15929575A JP15929575A JPS5283072A JP S5283072 A JPS5283072 A JP S5283072A JP 15929575 A JP15929575 A JP 15929575A JP 15929575 A JP15929575 A JP 15929575A JP S5283072 A JPS5283072 A JP S5283072A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
cahnnel
mosfet
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15929575A
Other languages
Japanese (ja)
Other versions
JPS5755304B2 (en
Inventor
Shigero Kuninobu
Takeshi Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15929575A priority Critical patent/JPS5283072A/en
Priority to US05/754,261 priority patent/US4085499A/en
Publication of JPS5283072A publication Critical patent/JPS5283072A/en
Publication of JPS5755304B2 publication Critical patent/JPS5755304B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To provide a short-cahnnel MOSFET having shallow diffused regions by forming a phosphorus-added poly Si layer on source and drain regions and performing diffusion through an SiO2 film.
COPYRIGHT: (C)1977,JPO&Japio
JP15929575A 1975-12-29 1975-12-29 Production of semiconductor device Granted JPS5283072A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15929575A JPS5283072A (en) 1975-12-29 1975-12-29 Production of semiconductor device
US05/754,261 US4085499A (en) 1975-12-29 1976-12-27 Method of making a MOS-type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15929575A JPS5283072A (en) 1975-12-29 1975-12-29 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5283072A true JPS5283072A (en) 1977-07-11
JPS5755304B2 JPS5755304B2 (en) 1982-11-24

Family

ID=15690659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15929575A Granted JPS5283072A (en) 1975-12-29 1975-12-29 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5283072A (en)

Also Published As

Publication number Publication date
JPS5755304B2 (en) 1982-11-24

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