JPS6415973A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS6415973A JPS6415973A JP17092887A JP17092887A JPS6415973A JP S6415973 A JPS6415973 A JP S6415973A JP 17092887 A JP17092887 A JP 17092887A JP 17092887 A JP17092887 A JP 17092887A JP S6415973 A JPS6415973 A JP S6415973A
- Authority
- JP
- Japan
- Prior art keywords
- collector
- region
- film
- polycrystal silicon
- silicon film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce collector resistance, make it possible to form a shallow buried layer turning to a collector, and increase the integration density of an LSI, by providing a ring type collector contact region formed by a self alignment technique, making up a constitution wherein a collector is led out from the peripheral part of a buried layer, and forming therein a ring-type emitter region. CONSTITUTION:By CVD method, a polycrystal silicon film 8 is stuck. Phosphorus is ion-implanted, and thermal treatment is performed. Thus an N-type diffusion layer 9 to lead out a collector is formed. The polycrystal silicon film 8 except the region to be used as a collector electrode is eliminated, by photo etching art. After a collector electrode is formed, an SiO2 film is formed by oxidizing the polycrystal silicon film 8, and an Si3N4 film 5 exposed at the central part is eliminated. By eliminating, with a reactive sputter etching system, the SiO2 film 4 in the region where an Si3N4 film 11 is eliminated, an emitter forming region 18 can be formed. A base layer 19 is formed by ion implanting method. A polycrystal silicon film is stuck on the whole surface, and phosphorus for forming an emitter layer is ion-implanted. An emitter layer 21 is formed by heat-treating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17092887A JPS6415973A (en) | 1987-07-10 | 1987-07-10 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17092887A JPS6415973A (en) | 1987-07-10 | 1987-07-10 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6415973A true JPS6415973A (en) | 1989-01-19 |
Family
ID=15913960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17092887A Pending JPS6415973A (en) | 1987-07-10 | 1987-07-10 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6415973A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5523614A (en) * | 1993-12-15 | 1996-06-04 | Nec Corporation | Bipolar transistor having enhanced high speed operation through reduced base leakage current |
| EP0767499A2 (en) * | 1995-10-05 | 1997-04-09 | Nec Corporation | Bipolar transistor with a reduced collector series resistance and method for fabricating the same |
-
1987
- 1987-07-10 JP JP17092887A patent/JPS6415973A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5523614A (en) * | 1993-12-15 | 1996-06-04 | Nec Corporation | Bipolar transistor having enhanced high speed operation through reduced base leakage current |
| EP0767499A2 (en) * | 1995-10-05 | 1997-04-09 | Nec Corporation | Bipolar transistor with a reduced collector series resistance and method for fabricating the same |
| EP0767499A3 (en) * | 1995-10-05 | 1997-07-02 | Nec Corp | Bipolar transistor with a reduced collector series resistance and method for fabricating the same |
| US5877539A (en) * | 1995-10-05 | 1999-03-02 | Nec Corporation | Bipolar transistor with a reduced collector series resistance |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5467778A (en) | Production of semiconductor device | |
| JPS5586151A (en) | Manufacture of semiconductor integrated circuit | |
| JPS6415973A (en) | Semiconductor device and manufacture thereof | |
| JPS57134956A (en) | Manufacture of semiconductor integrated circuit | |
| JPS6482668A (en) | Manufacture of bipolar transistor | |
| US5091323A (en) | Process for the fabrication of bipolar device | |
| JPS5727060A (en) | Manufacture of semiconductor device | |
| JPS55153344A (en) | Manufacture of semiconductor device | |
| JPS5640256A (en) | Manufacture of semiconductor device | |
| JPH021937A (en) | Semiconductor bipolar tranistor having base and emitter structure in trench and its manufacture | |
| JPS57176764A (en) | Manufacture of semiconductor device | |
| JPS6489364A (en) | Manufacture of bipolar semiconductor integrated circuit device | |
| JPS6415974A (en) | Semiconductor device | |
| JPS6439770A (en) | Manufacture of semiconductor device | |
| GB1300727A (en) | Shallow junction semiconductor device and method for making same | |
| JPS5568650A (en) | Manufacturing method of semiconductor device | |
| JPS57199236A (en) | Manufacture of oxide film isolation semiconductor device | |
| JPS6430254A (en) | Semiconductor device | |
| JPS6431460A (en) | Manufacture of bipolar transistor | |
| JPS5731172A (en) | Manufacture of semiconductor device | |
| JPS5559737A (en) | Preparation of semiconductor device | |
| JPS5754366A (en) | Manufacture of semiconductor device | |
| JPS57162460A (en) | Manufacture of semiconductor device | |
| JPS57143841A (en) | Insulation separating composition | |
| JPS5624922A (en) | Manufacture of semiconductor device |