JPS56100411A - Manufacture of semiconductor element - Google Patents
Manufacture of semiconductor elementInfo
- Publication number
- JPS56100411A JPS56100411A JP216480A JP216480A JPS56100411A JP S56100411 A JPS56100411 A JP S56100411A JP 216480 A JP216480 A JP 216480A JP 216480 A JP216480 A JP 216480A JP S56100411 A JPS56100411 A JP S56100411A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- diffusion
- oxidization
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 238000009792 diffusion process Methods 0.000 abstract 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 238000007254 oxidation reaction Methods 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000007788 liquid Substances 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 239000012466 permeate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
PURPOSE:To obtain the semiconductor device having stable properties by providing a P layer selectively on the N<+> layer of an N type substrate, making the surface of substrates face with each other and subjecting the same to stack diffusion with oxidization. CONSTITUTION:The N<+> layer 2 is left on one surface of the N type Si substrate 11 and the P layer 13 is provided on the substrate 11. By using a resist mask 14, the P layer 13 is removed through etching by the mixed liquid of fluoric acid, nitric acid and acetic acid and then the mask is removed. Next, by wet oxidization, the front and back surfaces of the substrate is covered with an SiO2 film 15. Then, the front surfaces and back surfaces of the substrates 11 are made opposed to each other respectively and are set to a jig 19. A central hole 18 helps gas to permeate. After that, the substrate is processed at high temperature in the ambience of N2: O2=10:90 and the surface thereof is subjected to the stack diffusion with oxidization, whereby abnormal diffusion of impurites is prevented. After the diffusion, the SiO2 film is removed by HF liquid and an SiO2 protection film is attached, whereby an emitter layer is formed. By this constitution, the NPN element with little unevenness of a base layer and stable properties is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP216480A JPS56100411A (en) | 1980-01-14 | 1980-01-14 | Manufacture of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP216480A JPS56100411A (en) | 1980-01-14 | 1980-01-14 | Manufacture of semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56100411A true JPS56100411A (en) | 1981-08-12 |
Family
ID=11521713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP216480A Pending JPS56100411A (en) | 1980-01-14 | 1980-01-14 | Manufacture of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56100411A (en) |
-
1980
- 1980-01-14 JP JP216480A patent/JPS56100411A/en active Pending
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