JPS56165369A - Semiconductor photoelectric converting element - Google Patents

Semiconductor photoelectric converting element

Info

Publication number
JPS56165369A
JPS56165369A JP6916880A JP6916880A JPS56165369A JP S56165369 A JPS56165369 A JP S56165369A JP 6916880 A JP6916880 A JP 6916880A JP 6916880 A JP6916880 A JP 6916880A JP S56165369 A JPS56165369 A JP S56165369A
Authority
JP
Japan
Prior art keywords
holding
junction
semiconductor layers
semiconductor
converting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6916880A
Other languages
Japanese (ja)
Inventor
Yoshitaka Shibata
Eiji Ikuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Minolta Co Ltd
Original Assignee
Minolta Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minolta Co Ltd filed Critical Minolta Co Ltd
Priority to JP6916880A priority Critical patent/JPS56165369A/en
Publication of JPS56165369A publication Critical patent/JPS56165369A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain desired spectroscopic sensitivity characteristics in a simple constitution by providing a three-layer structure of PNP or NPN, shorting semiconductor layers holding a second PN junction plane, and obtaining the output from semiconductor layers holding a first PN junction plane. CONSTITUTION:The three-layer structure of semiconductor elements is formed so as to obtain PNP or NPN layers from the surface. The first and second PN junction planes 10 and 5 are sequentially formed from the surface of the semiconductors. The semiconductor layers 1 and 4 holding said second PN junction plane 5 is shorted. The output is obtained from the semiconductor layers 4 and 9 holding the first PN junction 10. The carriers generated in the comparatively deep part from the light incident surface in the semiconductor photoelectric converting element are trapped, and the sensitivity on the shorter wavelength side is relatively enhanced.
JP6916880A 1980-05-23 1980-05-23 Semiconductor photoelectric converting element Pending JPS56165369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6916880A JPS56165369A (en) 1980-05-23 1980-05-23 Semiconductor photoelectric converting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6916880A JPS56165369A (en) 1980-05-23 1980-05-23 Semiconductor photoelectric converting element

Publications (1)

Publication Number Publication Date
JPS56165369A true JPS56165369A (en) 1981-12-18

Family

ID=13394905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6916880A Pending JPS56165369A (en) 1980-05-23 1980-05-23 Semiconductor photoelectric converting element

Country Status (1)

Country Link
JP (1) JPS56165369A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010103047A1 (en) * 2009-03-12 2010-09-16 Osram Opto Semiconductors Gmbh Radiation-receiving semiconductor component and optoelectronic device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010103047A1 (en) * 2009-03-12 2010-09-16 Osram Opto Semiconductors Gmbh Radiation-receiving semiconductor component and optoelectronic device
US8610225B2 (en) 2009-03-12 2013-12-17 Osram Opto Semiconductors Gmbh Radiation-receiving semiconductor component and optoelectronic device

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