JPS5637670A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5637670A
JPS5637670A JP11333379A JP11333379A JPS5637670A JP S5637670 A JPS5637670 A JP S5637670A JP 11333379 A JP11333379 A JP 11333379A JP 11333379 A JP11333379 A JP 11333379A JP S5637670 A JPS5637670 A JP S5637670A
Authority
JP
Japan
Prior art keywords
curvature
substrate
conductivity type
region
thereat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11333379A
Other languages
Japanese (ja)
Inventor
Teruo Kusaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11333379A priority Critical patent/JPS5637670A/en
Publication of JPS5637670A publication Critical patent/JPS5637670A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a high withstand semiconductor device which has high mass productivity and reliability by forming at a part of the end of an P-N junction structure forming the device of a mesa architecture and at the other part of the end thereof of a recess curvature shape on a plane as seen from the side of a conductivity type layer different from the substrate. CONSTITUTION:An anisotropic ethcing is conducted on one conductivity type Si substrate 1 having relatively low impurity density, and four rectilinear V-shaped grooves 4 are formed at an interval at the end thereof with each other. Then, a reverse conductivity type high impurity density region 2 is diffused or formed by an ion implantation in the substrate 1 of the portion surrounded by these grooves 5, and P-N junctions are thus formed. At this time the region 2 disposed at the ends of the four grooves 2 perpendicularly intersecting each other has the shape of recess curvature portion 6 on a plane pattern as seen from the side of the region 2 by utilizing the interval formed thereat. Thus, since the end of reverse curvature to the ordinary planar architecture curvature is provided thereat, high withstand voltage can be obtained thereat.
JP11333379A 1979-09-04 1979-09-04 Semiconductor device Pending JPS5637670A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11333379A JPS5637670A (en) 1979-09-04 1979-09-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11333379A JPS5637670A (en) 1979-09-04 1979-09-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5637670A true JPS5637670A (en) 1981-04-11

Family

ID=14609576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11333379A Pending JPS5637670A (en) 1979-09-04 1979-09-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5637670A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0719336U (en) * 1993-09-16 1995-04-07 株式会社ジェイ・セブン Hat child
JP2013118269A (en) * 2011-12-02 2013-06-13 Shindengen Electric Mfg Co Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0719336U (en) * 1993-09-16 1995-04-07 株式会社ジェイ・セブン Hat child
JP2013118269A (en) * 2011-12-02 2013-06-13 Shindengen Electric Mfg Co Ltd Semiconductor device

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