JPS5580387A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS5580387A
JPS5580387A JP15356078A JP15356078A JPS5580387A JP S5580387 A JPS5580387 A JP S5580387A JP 15356078 A JP15356078 A JP 15356078A JP 15356078 A JP15356078 A JP 15356078A JP S5580387 A JPS5580387 A JP S5580387A
Authority
JP
Japan
Prior art keywords
width
light emitting
clad layer
layer
clad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15356078A
Other languages
Japanese (ja)
Other versions
JPS593873B2 (en
Inventor
Hiroshi Nishi
Mitsuhiro Yano
Shigeo Osaka
Kiyoshi Hanamitsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP53153560A priority Critical patent/JPS593873B2/en
Publication of JPS5580387A publication Critical patent/JPS5580387A/en
Publication of JPS593873B2 publication Critical patent/JPS593873B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To secure a laser for oscillation in stable unified basic transverse mode and thus to obtain a light ouput of good linearity by an arrangement wherein the width of a current carrying region and that of a light emitting region are almost equalized each other, and an electrode is formed through a thin clad layer.
CONSTITUTION: An n-Ga0.7Al0.3As clad layer 2, p-Ga0.92Al0.08As activated layer 3, p-Ga0.7Al0.3As clad layer 4, p-GaAs 5 are laminated on an n-GaAs 1. The layers 4 and 5 are partly etched with a mask w in width applied thereon, subjected to S diffusion with a mask s in width applied further to have a clad part 4b changed to n-type, then subjected to Zn diffusion to have an ohmic junction layer 6 provided thereon, and electrodes 7, 8 of ti-Pt-Au structure are arranged. The width s is kept thus a little larger than the width w, and electrodes are provided on a thin part of the clad layer 4, therefore a laser is secured for oscillation in stable unified basic mode, and a light emitting characteristic is obtainable in good linearity.
COPYRIGHT: (C)1980,JPO&Japio
JP53153560A 1978-12-11 1978-12-11 semiconductor light emitting device Expired JPS593873B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53153560A JPS593873B2 (en) 1978-12-11 1978-12-11 semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53153560A JPS593873B2 (en) 1978-12-11 1978-12-11 semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPS5580387A true JPS5580387A (en) 1980-06-17
JPS593873B2 JPS593873B2 (en) 1984-01-26

Family

ID=15565156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53153560A Expired JPS593873B2 (en) 1978-12-11 1978-12-11 semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS593873B2 (en)

Also Published As

Publication number Publication date
JPS593873B2 (en) 1984-01-26

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