JPS5580387A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JPS5580387A JPS5580387A JP15356078A JP15356078A JPS5580387A JP S5580387 A JPS5580387 A JP S5580387A JP 15356078 A JP15356078 A JP 15356078A JP 15356078 A JP15356078 A JP 15356078A JP S5580387 A JPS5580387 A JP S5580387A
- Authority
- JP
- Japan
- Prior art keywords
- width
- light emitting
- clad layer
- layer
- clad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To secure a laser for oscillation in stable unified basic transverse mode and thus to obtain a light ouput of good linearity by an arrangement wherein the width of a current carrying region and that of a light emitting region are almost equalized each other, and an electrode is formed through a thin clad layer.
CONSTITUTION: An n-Ga0.7Al0.3As clad layer 2, p-Ga0.92Al0.08As activated layer 3, p-Ga0.7Al0.3As clad layer 4, p-GaAs 5 are laminated on an n-GaAs 1. The layers 4 and 5 are partly etched with a mask w in width applied thereon, subjected to S diffusion with a mask s in width applied further to have a clad part 4b changed to n-type, then subjected to Zn diffusion to have an ohmic junction layer 6 provided thereon, and electrodes 7, 8 of ti-Pt-Au structure are arranged. The width s is kept thus a little larger than the width w, and electrodes are provided on a thin part of the clad layer 4, therefore a laser is secured for oscillation in stable unified basic mode, and a light emitting characteristic is obtainable in good linearity.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53153560A JPS593873B2 (en) | 1978-12-11 | 1978-12-11 | semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53153560A JPS593873B2 (en) | 1978-12-11 | 1978-12-11 | semiconductor light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5580387A true JPS5580387A (en) | 1980-06-17 |
JPS593873B2 JPS593873B2 (en) | 1984-01-26 |
Family
ID=15565156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53153560A Expired JPS593873B2 (en) | 1978-12-11 | 1978-12-11 | semiconductor light emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS593873B2 (en) |
-
1978
- 1978-12-11 JP JP53153560A patent/JPS593873B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS593873B2 (en) | 1984-01-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55158691A (en) | Semiconductor light emitting device manufacture thereof | |
JPS5580387A (en) | Semiconductor light emitting device | |
JPS6482587A (en) | Quantum well type semiconductor laser | |
JPS5451491A (en) | Semiconductor laser | |
JPS57162382A (en) | Semiconductor laser | |
JPS5580386A (en) | Manufacture of semiconductor light emitting device | |
JPS54138386A (en) | Semiconductor laser device of current narrow type | |
JPS54126489A (en) | Stripe structure of semiconductor laser element | |
JPS56100488A (en) | Semiconductor laser device | |
JPS5636186A (en) | Stripe structure of semiconductor laser element and manufacture of said structure | |
JPS5518078A (en) | Semiconductor light emission device | |
JPS5591892A (en) | Semiconductor laser light emission device | |
JPS5799792A (en) | Semiconductor laser device | |
JPS54125990A (en) | Stripe structure of semiconductor laser element | |
JPS56122180A (en) | Manufacture of semiconductor light emitting element | |
JPS5474686A (en) | Visible semiconductor laser and its manufacture | |
JPS57139986A (en) | Manufacure of semiconductor laser | |
JPH067630B2 (en) | Three-terminal semiconductor laser device | |
JPS54107281A (en) | Semiconductor laser device | |
JPS5595386A (en) | Manufacture of semiconductor light emitting device | |
JPS55127015A (en) | Photo semiconductor device | |
JPS57143888A (en) | Electrode structure of semiconductor light emitting device | |
JPS55153383A (en) | Semiconductor hetero junction laser | |
JPH0621566A (en) | Extremely low current transmission type semiconductor element and semiconductor laser using the same | |
JPS5643789A (en) | Semiconductor laser |