GB1347752A - Semiconductor electron emitter - Google Patents

Semiconductor electron emitter

Info

Publication number
GB1347752A
GB1347752A GB2208771A GB2208771A GB1347752A GB 1347752 A GB1347752 A GB 1347752A GB 2208771 A GB2208771 A GB 2208771A GB 2208771 A GB2208771 A GB 2208771A GB 1347752 A GB1347752 A GB 1347752A
Authority
GB
United Kingdom
Prior art keywords
diode
layer
doped
photocathode
electropositive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2208771A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1347752A publication Critical patent/GB1347752A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers

Landscapes

  • Led Devices (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)

Abstract

1347752 Uses of luminescences RCA CORPOKATION 19 April 1971 [25 Feb 1970] 22087/71 Heading C4S [Also in Division H1] A cold cathode comprises a light emitting diode 14, 16 a semi-conductor photocathode 20 of good light absorbing material, a layer 22 of electropositive work reducing material and electrodes 26, 28 connected to the diode and photocathode. The cathode comprises a Si doped Al x Ga 1-x As diode with a Zn doped GaAs photocathode layer and an electropositive layer of oxygen and Cs, K or Ba. The outside of the diode is coated with a light reflecting layer of SiO covered with Au. One contact 30 for lead 28 comprises layers of Sn, Ni and Au; the other lead 26 is fused to the layer 20 or attached to a NiAu contact. The refractive index of layers 14, 20 may be the same. The diode is of a nitride, phosphide, arsenide or antimonide of B, Al, Ga or In preferably Al x Ga 1-x As where x < 0À34 with Si dopant introduced into the P and N regions at different temperatures by liquid phase epitaxy. The diode may comprise a wafer of N- type AL x Ga 1-x As doped with Te and a P-type layer of Al x Ga 1-x As doped with Ge or Si, the Al concentration falling towards the junction to reduce band gap energy.
GB2208771A 1970-02-25 1971-04-19 Semiconductor electron emitter Expired GB1347752A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1398070A 1970-02-25 1970-02-25

Publications (1)

Publication Number Publication Date
GB1347752A true GB1347752A (en) 1974-02-27

Family

ID=21762848

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2208771A Expired GB1347752A (en) 1970-02-25 1971-04-19 Semiconductor electron emitter

Country Status (6)

Country Link
US (1) US3667007A (en)
JP (1) JPS4830178B1 (en)
DE (1) DE2108235A1 (en)
FR (1) FR2078942A5 (en)
GB (1) GB1347752A (en)
NL (1) NL7102462A (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2175571B1 (en) * 1972-03-14 1978-08-25 Radiotechnique Compelec
US3727115A (en) * 1972-03-24 1973-04-10 Ibm Semiconductor electroluminescent diode comprising a ternary compound of gallium, thallium, and phosphorous
JPS5310840B2 (en) * 1972-05-04 1978-04-17
US3814996A (en) * 1972-06-27 1974-06-04 Us Air Force Photocathodes
US3814993A (en) * 1972-11-15 1974-06-04 Us Navy Tuneable infrared photocathode
DE2261757A1 (en) * 1972-12-16 1974-06-20 Philips Patentverwaltung SEMITRANSPARENT PHOTOCATHOD
JPS5430274B2 (en) * 1973-06-28 1979-09-29
US3877052A (en) * 1973-12-26 1975-04-08 Bell Telephone Labor Inc Light-emitting semiconductor apparatus for optical fibers
US3964388A (en) * 1974-03-04 1976-06-22 The Carter's Ink Company Method and apparatus for high speed non-impact printing with shade-of-grey control
US4023062A (en) * 1975-09-25 1977-05-10 Rca Corporation Low beam divergence light emitting diode
US4000503A (en) * 1976-01-02 1976-12-28 International Audio Visual, Inc. Cold cathode for infrared image tube
US4040080A (en) * 1976-03-22 1977-08-02 Hamamatsu Terebi Kabushiki Kaisha Semiconductor cold electron emission device
US4040074A (en) * 1976-03-22 1977-08-02 Hamamatsu Terebi Kabushiki Kaisha Semiconductor cold electron emission device
US4040079A (en) * 1976-03-22 1977-08-02 Hamamatsu Terebi Kabushiki Kaisha Semiconductor cold electron emission device
US4352117A (en) * 1980-06-02 1982-09-28 International Business Machines Corporation Electron source
NL8602330A (en) * 1986-09-15 1988-04-05 Philips Nv METHOD FOR CONTACTING SEMICONDUCTOR CATHODS, AND FOR MANUFACTURING AN ELECTRON TUBE PROVIDED WITH SUCH A CATHOD.
DE4123525A1 (en) * 1991-07-16 1993-01-21 Basf Ag SUBSTITUTED PYRIMIDINE DERIVATIVES AND THEIR USE FOR COMBATING UNWANTED PLANT GROWTH

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL147572B (en) * 1964-12-02 1975-10-15 Philips Nv ELECTRIC DISCHARGE TUBE WITH A PHOTO CATHOD.
US3478213A (en) * 1967-09-05 1969-11-11 Rca Corp Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon
US3529200A (en) * 1968-03-28 1970-09-15 Gen Electric Light-emitting phosphor-diode combination

Also Published As

Publication number Publication date
US3667007A (en) 1972-05-30
JPS4830178B1 (en) 1973-09-18
NL7102462A (en) 1971-08-27
FR2078942A5 (en) 1971-11-05
DE2108235A1 (en) 1971-09-09

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee