GB1072550A - A monolithic semiconductor device - Google Patents
A monolithic semiconductor deviceInfo
- Publication number
- GB1072550A GB1072550A GB4563865A GB4563865A GB1072550A GB 1072550 A GB1072550 A GB 1072550A GB 4563865 A GB4563865 A GB 4563865A GB 4563865 A GB4563865 A GB 4563865A GB 1072550 A GB1072550 A GB 1072550A
- Authority
- GB
- United Kingdom
- Prior art keywords
- groove
- junction
- regions
- whilst
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000005708 Sodium hypochlorite Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
<PICT:1072550/C4-C5/1> A semi-conductor device comprises an electrically insulating substrate and a layer of semi-conductor material including a PN junction divided into two mutually insulated regions by a groove extending across the junction, one of the regions being operatable as a radiation emissive diode and the other as a photo-sensitive diode, said groove being filled with a material which reduces loss of radiation by reflection. N-doped GaAs 2 is deposited epitaxially on a highly resistive substrate of Cr-doped GaAs 1. Zn is diffused in to give a PN junction 3. A groove 4 is formed by etching with sodium hypochlorite through a fissure in an SiO2 mask, thus giving two mutually insulated regions 19 and 20 to which ohmic contacts 5, 6, 7 and 8 are added. The groove 4 may be filled with Se or SiO2 whilst the outer surfaces of the device may be covered, 9, with gold. Two other embodiments are described, one (Fig. 2, not shown) has an inset PN junction whilst the other (Fig. 3, not shown) has a curved groove to give two almost circular PN junctions. The emissive diode is said to emit light of 9000 <\>rA.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEJ0026847 | 1964-11-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1072550A true GB1072550A (en) | 1967-06-21 |
Family
ID=7202773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4563865A Expired GB1072550A (en) | 1964-11-07 | 1965-10-28 | A monolithic semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1489033A1 (en) |
| GB (1) | GB1072550A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5357783A (en) * | 1976-11-03 | 1978-05-25 | Ibm | Photoconductive converting cell array |
| JPS5357784A (en) * | 1976-11-03 | 1978-05-25 | Ibm | Photoelectric converter |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19635215A1 (en) * | 1996-08-30 | 1998-03-12 | Forschungszentrum Juelich Gmbh | Optocoupler with photon transmitter and receiver function |
-
1964
- 1964-11-07 DE DE19641489033 patent/DE1489033A1/en active Pending
-
1965
- 1965-10-28 GB GB4563865A patent/GB1072550A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5357783A (en) * | 1976-11-03 | 1978-05-25 | Ibm | Photoconductive converting cell array |
| JPS5357784A (en) * | 1976-11-03 | 1978-05-25 | Ibm | Photoelectric converter |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1489033A1 (en) | 1969-05-14 |
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