GB1204269A - Improvements in or relating to optical-electronic semiconductor devices - Google Patents
Improvements in or relating to optical-electronic semiconductor devicesInfo
- Publication number
- GB1204269A GB1204269A GB1519968A GB1519968A GB1204269A GB 1204269 A GB1204269 A GB 1204269A GB 1519968 A GB1519968 A GB 1519968A GB 1519968 A GB1519968 A GB 1519968A GB 1204269 A GB1204269 A GB 1204269A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- photodiode
- layer
- guard ring
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010410 layer Substances 0.000 abstract 7
- 239000005387 chalcogenide glass Substances 0.000 abstract 4
- 239000011241 protective layer Substances 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910001297 Zn alloy Inorganic materials 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
1,204,269. Semi-conductor devices. SIEMENS A.G. 29 March, 1968 [31 March, 1967], No. 15199/68. Heading H1K. In a device comprising a luminescent diode mounted on and optically coupled to a photodiode by a layer of a chalcogenide glass which plastically adheres to the surface of the photodiode at the designed operating temperatures. the photodiode comprises a body of one conductivity type with a region of the opposite type extending over part of one surface, a protective layer covering the boundary of the region and the remainder of the face of the body the region being surrounded by a high conductivity guard ring of the same conductivity type as the body, the guard ring being contacted by an associated metal layer on the surface of the protective layer. The guard ring, which is situated at the edge of the depletion layer, prevents the formation of an inversion layer in the surface of the body below the protective layer which otherwise results from the ionization of the chalcogenide glass. As shown, Fig. 3, the planar photodiode 2 comprises a body of N-type silicon having a diffused P-type region in its upper face surrounded by an N+ type guard ring produced by diffusion of phosphorus. The surface of the P-type body and the junctions are protected by an oxide layer 4 and the guard ring is contacted by an aluminium layer 5. A GaAs light emitting diode 1 is mounted parallel to the photodiode 2 by means of a layer 3 of a low melting point chalcogenide glass through which the light passes. The light emitting diode may be produced by alloying tin-zinc alloy to an N-type GaAs wafer. The assembly is mounted on a gilded header 6 filled with insulating glass 7. The chalcogenide glass may comprise 15% As, 85% Se or 28% As, 40% S, 32% I. In use the luminescent diode 1 is forward biased and the photodiode 2 is reverse biased. The body of the photodiode may be of P-type silicon in which case the guard ring is a P+ type region produced by diffusing-in boron.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0109118 | 1967-03-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1204269A true GB1204269A (en) | 1970-09-03 |
Family
ID=7529299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1519968A Expired GB1204269A (en) | 1967-03-31 | 1968-03-29 | Improvements in or relating to optical-electronic semiconductor devices |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1614471A1 (en) |
| FR (1) | FR1562359A (en) |
| GB (1) | GB1204269A (en) |
| NL (1) | NL6716613A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1432697A (en) * | 1973-05-04 | 1976-04-22 | Standard Telephones Cables Ltd | Optically coupled semiconductive switching devices |
| GB1557685A (en) * | 1976-02-02 | 1979-12-12 | Fairchild Camera Instr Co | Optically coupled isolator device |
| DE3633251A1 (en) * | 1986-09-30 | 1988-03-31 | Siemens Ag | OPTOELECTRONIC COUPLING ELEMENT |
-
1967
- 1967-03-31 DE DE19671614471 patent/DE1614471A1/en active Pending
- 1967-12-06 NL NL6716613A patent/NL6716613A/xx unknown
-
1968
- 1968-03-25 FR FR1562359D patent/FR1562359A/fr not_active Expired
- 1968-03-29 GB GB1519968A patent/GB1204269A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1614471A1 (en) | 1970-05-27 |
| NL6716613A (en) | 1968-10-01 |
| FR1562359A (en) | 1969-04-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |