GB1181695A - Optical Devices comprising Silicon Carbide - Google Patents
Optical Devices comprising Silicon CarbideInfo
- Publication number
- GB1181695A GB1181695A GB03667/67A GB1366767A GB1181695A GB 1181695 A GB1181695 A GB 1181695A GB 03667/67 A GB03667/67 A GB 03667/67A GB 1366767 A GB1366767 A GB 1366767A GB 1181695 A GB1181695 A GB 1181695A
- Authority
- GB
- United Kingdom
- Prior art keywords
- chromium
- sic
- region
- silicon carbide
- march
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 6
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 6
- 230000003287 optical effect Effects 0.000 title abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 4
- 229910052804 chromium Inorganic materials 0.000 abstract 4
- 239000011651 chromium Substances 0.000 abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910000599 Cr alloy Inorganic materials 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 239000000788 chromium alloy Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
- H01L33/343—Materials of the light emitting region containing only elements of Group IV of the Periodic Table characterised by the doping materials
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1,181,695. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 23 March, 1967 [29 March, 1966], No. 13667/67. Heading H1K. A semi-conductor optical device comprises a silicon carbide body including a region which contains only chromium as the conductivitytype determining impurity. It is stated that such a region has P-type conductivity, and is transparent to light throughout the visible region. In the photo-voltaic cell shown the P and N-type regions 1, 2 of a SiC body contain chromium and nitrogen, respectively, as dopants, both in concentrations of 10<SP>19</SP> cm.<SP>-3</SP>. Both regions are 1 mm. thick, the chromium dopant being introduced by alloying or diffusion. Alternatively the chromium-doped SiC can be crystallized from a solution in chromium or chromium alloys. The contacts 4, 5 are of Au containing Ta and Al and of Au containing Ta, respectively, both being fused on to the SiC body, and both having a Pt wire 5, 7 attached thereto. A similar but differently dimensioned device may be used as an electroluminescent diode, and the invention may also be applied to photo-resistances. Al-doped SiC is stated to be known.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6604087A NL6604087A (en) | 1966-03-29 | 1966-03-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1181695A true GB1181695A (en) | 1970-02-18 |
Family
ID=19796123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB03667/67A Expired GB1181695A (en) | 1966-03-29 | 1967-03-23 | Optical Devices comprising Silicon Carbide |
Country Status (10)
| Country | Link |
|---|---|
| JP (1) | JPS4417302B1 (en) |
| AT (1) | AT279691B (en) |
| BE (1) | BE696207A (en) |
| CH (1) | CH461640A (en) |
| DE (1) | DE1614230A1 (en) |
| DK (1) | DK116013B (en) |
| FR (1) | FR1517250A (en) |
| GB (1) | GB1181695A (en) |
| NL (1) | NL6604087A (en) |
| SE (1) | SE328643B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2188482B (en) * | 1986-03-24 | 1990-03-07 | Mitel Corp | Optical sensor |
-
1966
- 1966-03-29 NL NL6604087A patent/NL6604087A/xx unknown
-
1967
- 1967-03-22 DK DK151567AA patent/DK116013B/en unknown
- 1967-03-23 DE DE19671614230 patent/DE1614230A1/en active Pending
- 1967-03-23 GB GB03667/67A patent/GB1181695A/en not_active Expired
- 1967-03-24 AT AT288467A patent/AT279691B/en not_active IP Right Cessation
- 1967-03-25 JP JP1848167A patent/JPS4417302B1/ja active Pending
- 1967-03-28 BE BE696207D patent/BE696207A/xx unknown
- 1967-03-28 CH CH433167A patent/CH461640A/en unknown
- 1967-03-28 SE SE04232/67A patent/SE328643B/xx unknown
- 1967-03-29 FR FR100666A patent/FR1517250A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2188482B (en) * | 1986-03-24 | 1990-03-07 | Mitel Corp | Optical sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4417302B1 (en) | 1969-07-30 |
| SE328643B (en) | 1970-09-21 |
| CH461640A (en) | 1968-08-31 |
| AT279691B (en) | 1970-03-10 |
| DK116013B (en) | 1969-12-01 |
| BE696207A (en) | 1967-09-28 |
| NL6604087A (en) | 1967-10-02 |
| DE1614230A1 (en) | 1970-08-27 |
| FR1517250A (en) | 1968-03-15 |
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