GB1053104A - - Google Patents
Info
- Publication number
- GB1053104A GB1053104A GB1053104DA GB1053104A GB 1053104 A GB1053104 A GB 1053104A GB 1053104D A GB1053104D A GB 1053104DA GB 1053104 A GB1053104 A GB 1053104A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- region
- silicon
- annular
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- 238000005275 alloying Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910000521 B alloy Inorganic materials 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910001245 Sb alloy Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000002140 antimony alloy Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- OPEKUPPJGIMIDT-UHFFFAOYSA-N boron gold Chemical compound [B].[Au] OPEKUPPJGIMIDT-UHFFFAOYSA-N 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000002452 interceptive effect Effects 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
1,053,104. Semi-conductor devices. SIEMENS & HALSKE A.G. Aug. 19, 1964 [Aug. 20, 1963], No. 33812/64. Heading H1K. A partially flat PN junction is produced by increasing the resistivity of an annular zone by diffusion and alloying a flat impurity body to produce an alloyed zone of opposite conductivity type, the boundary of the alloyed zone falling within the annular diffused zone. The high resistance diffused region prevents voltage breakdown which otherwise tends to occur in this region due to excessive curvature of the junction. Fig. 4 shows an embodiment in which an N-type annular high resistivity region 7 has been produced in a P-type silicon body 1 by diffusion of phosphorus from P 2 O 5 through window 6 etched in a silicon oxide coating 5. N-type region 3 was then produced by alloying a flat disc 2 of gold-antimony alloy into the silicon so that the peripheral region of the alloyed PN junction extended into region 7. In a further embodiment, B 2 O 3 was utilized to diffuse boron into an N-type silicon body to form the annular high resistivity zone and a disc of aluminium or gold-boron alloy was used to form the alloyed zone in the silicon body. Silicon carbide could be used in place of silicon. In another embodiment an additional diffused annular zone of the same conductivity type as the body was provided around the high resistivity diffused annular zone of opposite type, this second zone acting to prevent the formation of interfering channels.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES86813A DE1231355B (en) | 1963-08-20 | 1963-08-20 | Method for manufacturing a semiconductor device with an alloyed pn junction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1053104A true GB1053104A (en) |
Family
ID=7513293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1053104D Active GB1053104A (en) | 1963-08-20 |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH422163A (en) |
| DE (1) | DE1231355B (en) |
| GB (1) | GB1053104A (en) |
| NL (1) | NL6409509A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3475234A (en) * | 1967-03-27 | 1969-10-28 | Bell Telephone Labor Inc | Method for making mis structures |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1414438A1 (en) * | 1959-11-13 | 1970-04-23 |
-
0
- GB GB1053104D patent/GB1053104A/en active Active
-
1963
- 1963-08-20 DE DES86813A patent/DE1231355B/en active Pending
-
1964
- 1964-05-20 CH CH656964A patent/CH422163A/en unknown
- 1964-08-18 NL NL6409509A patent/NL6409509A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CH422163A (en) | 1966-10-15 |
| NL6409509A (en) | 1965-02-22 |
| DE1231355B (en) | 1966-12-29 |
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