GB1259212A - - Google Patents

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Publication number
GB1259212A
GB1259212A GB1259212DA GB1259212A GB 1259212 A GB1259212 A GB 1259212A GB 1259212D A GB1259212D A GB 1259212DA GB 1259212 A GB1259212 A GB 1259212A
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bore
pin
region
light
face
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    • H—ELECTRICITY
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)

Abstract

1,259,212. Electroluminescence. INTERNATIONAL BUSINESS MACHINES CORP. 30 June, 1969 [1 July, 1968], No. 32969/69. Heading C4S. [Also in Division H1] Electrical contact to a region of one conductivity type defining an electro-optically active junction in a body of the opposite conductivity type is achieved by means of a pin mounted in a bore passing into the region from a planar face of the body, the pin extending out of the body at the face. The device may be a photovoltaic detector or a photo-emissive diode or laser. The light emission or reception occurs at a second planar face so that the light path is not blocked by the contact to the region. An N-type body 23<SP>1</SP> contains an array of devices 22 each comprising a P-type region 27 contacted by a pin 28 which is a tight fit in a bore 25 to provide a pressure contact, Fig. 5. In modifications the pin extends to the top surface of the wafer where it is provided with a head of such dimensions that the light path is not blocked, Fig. 6 (not shown), a headed pin is soldered into the bore, Fig. 7 (not shown), and a wire is soldered in the bore, Fig. 8 (not shown). The PN junction shape may be inverted relative to that shown or may comprise a straight cylinder, Fig. 17 (not shown), and the bore may extend halfway only through the body, Figs. 9b and d (not shown). If the pin is provided with a head this may be of transparent material. The junction may be so arranged that the light is emitted from the edge of the body, Fig. 18 (not shown). The devices are made by forming the bore in the body by masking and etching or by electron beam drilling, and then photomasking and diffusing to form the region surrounding the bore. The starting body may comprise an epitaxial layer on a substrate of the same conductivity type. The surface through which the light passes may be lapped or polished to improve the light transmission and the face through which the contact pins extend may be coated with an opaque material such as beryllium oxide or boron nitride. The semi-conductor material may be GaAs, or GaAlAs utilizing Te and Zn as the N- and P-type impurities.
GB1259212D 1968-07-01 1969-06-30 Expired GB1259212A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74156168A 1968-07-01 1968-07-01

Publications (1)

Publication Number Publication Date
GB1259212A true GB1259212A (en) 1972-01-05

Family

ID=24981226

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1259212D Expired GB1259212A (en) 1968-07-01 1969-06-30

Country Status (3)

Country Link
DE (1) DE1932065A1 (en)
FR (1) FR2012024A1 (en)
GB (1) GB1259212A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2197984A (en) * 1986-11-21 1988-06-02 Marconi Co Ltd Cadmium mercury telluride photodiode

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2102590A5 (en) * 1970-08-11 1972-04-07 Radiotechnique Compelec
FR2523369B1 (en) * 1982-03-12 1985-11-29 Telecommunications Sa MATRIX INFRARED DETECTOR
GB2203894B (en) * 1987-03-03 1990-11-21 Fumio Inaba Surface emission type semiconductor light-emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2197984A (en) * 1986-11-21 1988-06-02 Marconi Co Ltd Cadmium mercury telluride photodiode
GB2197984B (en) * 1986-11-21 1991-02-20 Marconi Co Ltd Cadmium mercury telluride photodiode

Also Published As

Publication number Publication date
DE1932065A1 (en) 1970-01-15
FR2012024A1 (en) 1970-03-13

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