GB1190829A - A Semiconductor Device for Displaying an Electric Signal - Google Patents
A Semiconductor Device for Displaying an Electric SignalInfo
- Publication number
- GB1190829A GB1190829A GB5578667A GB5578667A GB1190829A GB 1190829 A GB1190829 A GB 1190829A GB 5578667 A GB5578667 A GB 5578667A GB 5578667 A GB5578667 A GB 5578667A GB 1190829 A GB1190829 A GB 1190829A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- type
- junctions
- gas
- instanced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000008033 biological extinction Effects 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 238000000407 epitaxy Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Devices (AREA)
Abstract
1,190,829. Electroluminescence. CESKOSLOVENSKA AKADEMIE VED. 7 Dec., 1967 [9 Dec., 1966], No. 55786/67. Heading C4S. [Also in Division H1] A device for displaying electric signals (e.g. numbers, letters, signs, symbols and pictures such as in portable colour TV receivers) comprises at least two parallel elongate semiconductor bodies 2 of one conductivity type, each provided in the longitudinal direction with a plurality of separate semi-conductor regions 10 of the opposite conductivity type forming lightemitting junctions 4. Ohmic contacts on s.c. regions 10 are arranged to form rows perpendicular to the s.c. bodies 2 each row being interconnected by supply lead 6. Modulation (e.g. extinction) of light from junctions 4 may be effected by current flow also between the end faces of semi-conductors 2. A.C. and D.C. voltages are instanced and also pulsed operation. Layer 8 may be mono-crystalline P-type GaAs, layer (2) of P-type GaS, layer 10 of N- type GaS with silicon insulating layers 9a and 9b, and polycrystalline silicon layer 1. A device may include P-type GaAs, P-type GaP and N-type GaP as layers (8), (2) and (10), respectively (Fig. 4, not shown), and s.c. materials of GaAsP and silicon carbide are also instanced. Fabrication using epitaxy, diffusion and planar techniques is disclosed. The base layer may be a ceramic, a metal with an insulator, e.g. an oxide, or a translucent material such as a glass for light emission at the opposite face (Figs. 2a, 2b, not shown). The junctions on a particular s.c. body 2 may each emit light of a different wavelength, or may each emit light of the same wavelength but different to the junctions on adjacent s.c. bodies. Red, green and blue or yellow emitting semi-conductors may be of GaS, GaS, and silicon carbide respectively. Logic and switching integrated circuits on the rear of layer 1 are instanced.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS788266 | 1966-12-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1190829A true GB1190829A (en) | 1970-05-06 |
Family
ID=5428717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5578667A Expired GB1190829A (en) | 1966-12-09 | 1967-12-07 | A Semiconductor Device for Displaying an Electric Signal |
Country Status (5)
| Country | Link |
|---|---|
| AT (1) | AT286386B (en) |
| DE (1) | DE1589119A1 (en) |
| FR (1) | FR1549666A (en) |
| GB (1) | GB1190829A (en) |
| NL (1) | NL6716727A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2129808A1 (en) * | 1970-06-18 | 1971-12-30 | Philips Nv | Device and base plate for a mosaic of semiconductor components |
| DE3447452A1 (en) * | 1983-12-26 | 1985-07-11 | Victor Company Of Japan, Ltd., Yokohama, Kanagawa | LEVEL LIGHT-EMITTING DIODE PANEL DISPLAY AND METHOD FOR THE PRODUCTION THEREOF |
| DE3919462A1 (en) * | 1988-06-27 | 1989-12-28 | Mitsubishi Electric Corp | MULTIPLE SEMICONDUCTOR LASER AND METHOD FOR THE PRODUCTION THEREOF |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4242565A (en) * | 1979-06-05 | 1980-12-30 | Minnesota Mining And Manufacturing Company | Thermal print head |
| DE3009985A1 (en) * | 1980-03-14 | 1981-09-24 | Siemens AG, 1000 Berlin und 8000 München | Light emitting diode chip assembly - is formed by applying thick metal layer one side for sawing into lines and columns |
-
1967
- 1967-12-06 DE DE19671589119 patent/DE1589119A1/en active Pending
- 1967-12-07 GB GB5578667A patent/GB1190829A/en not_active Expired
- 1967-12-07 AT AT1109467A patent/AT286386B/en not_active IP Right Cessation
- 1967-12-08 FR FR1549666D patent/FR1549666A/fr not_active Expired
- 1967-12-08 NL NL6716727A patent/NL6716727A/xx unknown
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2129808A1 (en) * | 1970-06-18 | 1971-12-30 | Philips Nv | Device and base plate for a mosaic of semiconductor components |
| DE3447452A1 (en) * | 1983-12-26 | 1985-07-11 | Victor Company Of Japan, Ltd., Yokohama, Kanagawa | LEVEL LIGHT-EMITTING DIODE PANEL DISPLAY AND METHOD FOR THE PRODUCTION THEREOF |
| DE3919462A1 (en) * | 1988-06-27 | 1989-12-28 | Mitsubishi Electric Corp | MULTIPLE SEMICONDUCTOR LASER AND METHOD FOR THE PRODUCTION THEREOF |
| GB2220523A (en) * | 1988-06-27 | 1990-01-10 | Mitsubishi Electric Corp | A multi-point light emission semiconductor laser |
| US4916710A (en) * | 1988-06-27 | 1990-04-10 | Mitsubishi Denki Kabushiki Kaisha | Multi-point emission type semiconductor laser device therefor |
| US5047364A (en) * | 1988-06-27 | 1991-09-10 | Mitsubishi Denki Kabushiki Kaisha | Method for making a multi-point emission type semiconductor laser device |
| GB2220523B (en) * | 1988-06-27 | 1992-05-20 | Mitsubishi Electric Corp | A multi-point emission type semiconductor laser device and production method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| AT286386B (en) | 1970-12-10 |
| NL6716727A (en) | 1968-06-10 |
| DE1589119A1 (en) | 1970-09-10 |
| FR1549666A (en) | 1968-12-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |