DE3009985A1 - Light emitting diode chip assembly - is formed by applying thick metal layer one side for sawing into lines and columns - Google Patents

Light emitting diode chip assembly - is formed by applying thick metal layer one side for sawing into lines and columns

Info

Publication number
DE3009985A1
DE3009985A1 DE19803009985 DE3009985A DE3009985A1 DE 3009985 A1 DE3009985 A1 DE 3009985A1 DE 19803009985 DE19803009985 DE 19803009985 DE 3009985 A DE3009985 A DE 3009985A DE 3009985 A1 DE3009985 A1 DE 3009985A1
Authority
DE
Germany
Prior art keywords
side
metal
metal layer
light emitting
sawing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19803009985
Other languages
German (de)
Inventor
Hans-Juergen Dipl Ing Hacke
Andreas Ing Grad Wittmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19803009985 priority Critical patent/DE3009985A1/en
Publication of DE3009985A1 publication Critical patent/DE3009985A1/en
Application status is Withdrawn legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043Making grooves, e.g. cutting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0095Post-treatments of the devices, e.g. annealing, recrystallisation, short-circuit elimination

Abstract

The method of forming light emitting diodes with metallised LED chips on both sides includes first forming an LED disc and applying a thick metal layer on one side for mounting on a base layer. The disc can then be cut by two sets of saw cuts at right angles, extending down to the metal lyaer. This forms a rectangular grid of cuts so that the disc can be cut into strips. The metal layer can be to the metal base layer by soldering, adhesive connection or deposition. In an alternative system, the cuts can be made after parallel metal strips have been attached to one side. The line of chips attached to a metal strip can be used as a prefabricated element for a set of chips.
DE19803009985 1980-03-14 1980-03-14 Light emitting diode chip assembly - is formed by applying thick metal layer one side for sawing into lines and columns Withdrawn DE3009985A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19803009985 DE3009985A1 (en) 1980-03-14 1980-03-14 Light emitting diode chip assembly - is formed by applying thick metal layer one side for sawing into lines and columns

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803009985 DE3009985A1 (en) 1980-03-14 1980-03-14 Light emitting diode chip assembly - is formed by applying thick metal layer one side for sawing into lines and columns

Publications (1)

Publication Number Publication Date
DE3009985A1 true DE3009985A1 (en) 1981-09-24

Family

ID=6097295

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803009985 Withdrawn DE3009985A1 (en) 1980-03-14 1980-03-14 Light emitting diode chip assembly - is formed by applying thick metal layer one side for sawing into lines and columns

Country Status (1)

Country Link
DE (1) DE3009985A1 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3447452A1 (en) * 1983-12-26 1985-07-11 Victor Company Of Japan Plane light emitting diode-panel display and process for their preparation
WO1989008927A1 (en) * 1988-03-15 1989-09-21 Siemens Aktiengesellschaft Assembly process for producing led rows
EP1085561A1 (en) * 1999-09-13 2001-03-21 Siliconix Incorporated Chip scale surface mount package for semiconductor device and process of fabricating the same
DE19603444C2 (en) * 1996-01-31 2003-04-24 Siemens Ag LED device having at least two LEDs
NL1029688C2 (en) * 2005-08-05 2007-02-06 Lemnis Lighting Ip Gmbh Reactive circuit for lighting device, lights-up space by loading several LEDs with full correction current
US7211877B1 (en) 1999-09-13 2007-05-01 Vishay-Siliconix Chip scale surface mount package for semiconductor device and process of fabricating the same
DE102007030129A1 (en) * 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Method for producing a plurality of optoelectronic components and optoelectronic component
WO2016087374A1 (en) * 2014-12-01 2016-06-09 Osram Opto Semiconductors Gmbh Semiconductor chip, method for producing a multiplicity of semiconductor chips and method for producing an electronic or optoelectronic component and electronic or optoelectronic component

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1549666A (en) * 1966-12-09 1968-12-13

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1549666A (en) * 1966-12-09 1968-12-13

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US-Z: IEEE Transactions on Electron Devices, ED-18, 1971, 633-637 *

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3447452A1 (en) * 1983-12-26 1985-07-11 Victor Company Of Japan Plane light emitting diode-panel display and process for their preparation
WO1989008927A1 (en) * 1988-03-15 1989-09-21 Siemens Aktiengesellschaft Assembly process for producing led rows
US5043296A (en) * 1988-03-15 1991-08-27 Siemens Aktiengesellschaft Method of manufacturing LED rows using a temporary rigid auxiliary carrier
DE19603444C2 (en) * 1996-01-31 2003-04-24 Siemens Ag LED device having at least two LEDs
EP1085561A1 (en) * 1999-09-13 2001-03-21 Siliconix Incorporated Chip scale surface mount package for semiconductor device and process of fabricating the same
US6271060B1 (en) 1999-09-13 2001-08-07 Vishay Intertechnology, Inc. Process of fabricating a chip scale surface mount package for semiconductor device
US7589396B2 (en) 1999-09-13 2009-09-15 Vishay-Siliconix Chip scale surface mount package for semiconductor device and process of fabricating the same
US7211877B1 (en) 1999-09-13 2007-05-01 Vishay-Siliconix Chip scale surface mount package for semiconductor device and process of fabricating the same
WO2007052241A2 (en) * 2005-08-05 2007-05-10 Lemnis Lighting Ip Gmbh Method for preparing an electric comprising multiple leds
WO2007052241A3 (en) * 2005-08-05 2007-08-16 Lemnis Lighting Ip Gmbh Method for preparing an electric comprising multiple leds
NL1029688C2 (en) * 2005-08-05 2007-02-06 Lemnis Lighting Ip Gmbh Reactive circuit for lighting device, lights-up space by loading several LEDs with full correction current
DE102007030129A1 (en) * 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Method for producing a plurality of optoelectronic components and optoelectronic component
US8461601B2 (en) 2007-06-29 2013-06-11 Osram Opto Semiconductors Gmbh Method for producing a plurality of optoelectronic devices, and optoelectronic device
WO2016087374A1 (en) * 2014-12-01 2016-06-09 Osram Opto Semiconductors Gmbh Semiconductor chip, method for producing a multiplicity of semiconductor chips and method for producing an electronic or optoelectronic component and electronic or optoelectronic component
US10134943B2 (en) 2014-12-01 2018-11-20 Osram Opto Semiconductors Gmbh Semiconductor chip, method for producing a plurality of semiconductor chips and method for producing an electronic or optoelectronic device and electronic or optoelectronic device

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8139 Disposal/non-payment of the annual fee