JPS5481785A - Iil-type semiconductor integrated circuit - Google Patents

Iil-type semiconductor integrated circuit

Info

Publication number
JPS5481785A
JPS5481785A JP15025477A JP15025477A JPS5481785A JP S5481785 A JPS5481785 A JP S5481785A JP 15025477 A JP15025477 A JP 15025477A JP 15025477 A JP15025477 A JP 15025477A JP S5481785 A JPS5481785 A JP S5481785A
Authority
JP
Japan
Prior art keywords
type
buried layer
layer
grown
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15025477A
Other languages
Japanese (ja)
Inventor
Masao Yoshizawa
Hiroshi Sugano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15025477A priority Critical patent/JPS5481785A/en
Publication of JPS5481785A publication Critical patent/JPS5481785A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]
    • H01L27/0244I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To improve dielectric strength by providing the buried layer of an I<2>L transistor to the boundary part between the 1st and 2nd epitaxial stacked layers grown on a semiconductor substrate and the buried layer of a bipolar transistor to the boundary part between the substrate and 1st epitaxial layer. CONSTITUTION:On P-type semiconductor substrate 1, N<+>-type 1st buried layer 2 is diffusion-formed as the collector of a bipolar transistor, and on the entire surface, N- type 1st epitaxial layer 3 is grown while buried layer 2 is diffused again at the same time to flow partially in layer 3. Next, N<+>-type 2nd buried layer 2a as the emitter of an I<2>L transistor is diffusion-formed and on it, N-type 2nd epitaxial layer 3a is grown, but buried layer 2a flows as well. In an ordinary way afterward, P-type isolation region 4, P-type injector 5, P-type 1st and 3rd regions 6 and 8, and N<+>- type 2nd, 4th and 5th regions 7, 9 and 10 are formed and an internal wiring is provided, thereby obtaining an IC.
JP15025477A 1977-12-13 1977-12-13 Iil-type semiconductor integrated circuit Pending JPS5481785A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15025477A JPS5481785A (en) 1977-12-13 1977-12-13 Iil-type semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15025477A JPS5481785A (en) 1977-12-13 1977-12-13 Iil-type semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5481785A true JPS5481785A (en) 1979-06-29

Family

ID=15492914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15025477A Pending JPS5481785A (en) 1977-12-13 1977-12-13 Iil-type semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5481785A (en)

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