JPS5481785A - Iil-type semiconductor integrated circuit - Google Patents
Iil-type semiconductor integrated circuitInfo
- Publication number
- JPS5481785A JPS5481785A JP15025477A JP15025477A JPS5481785A JP S5481785 A JPS5481785 A JP S5481785A JP 15025477 A JP15025477 A JP 15025477A JP 15025477 A JP15025477 A JP 15025477A JP S5481785 A JPS5481785 A JP S5481785A
- Authority
- JP
- Japan
- Prior art keywords
- type
- buried layer
- layer
- grown
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000002955 isolation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To improve dielectric strength by providing the buried layer of an I<2>L transistor to the boundary part between the 1st and 2nd epitaxial stacked layers grown on a semiconductor substrate and the buried layer of a bipolar transistor to the boundary part between the substrate and 1st epitaxial layer. CONSTITUTION:On P-type semiconductor substrate 1, N<+>-type 1st buried layer 2 is diffusion-formed as the collector of a bipolar transistor, and on the entire surface, N- type 1st epitaxial layer 3 is grown while buried layer 2 is diffused again at the same time to flow partially in layer 3. Next, N<+>-type 2nd buried layer 2a as the emitter of an I<2>L transistor is diffusion-formed and on it, N-type 2nd epitaxial layer 3a is grown, but buried layer 2a flows as well. In an ordinary way afterward, P-type isolation region 4, P-type injector 5, P-type 1st and 3rd regions 6 and 8, and N<+>- type 2nd, 4th and 5th regions 7, 9 and 10 are formed and an internal wiring is provided, thereby obtaining an IC.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15025477A JPS5481785A (en) | 1977-12-13 | 1977-12-13 | Iil-type semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15025477A JPS5481785A (en) | 1977-12-13 | 1977-12-13 | Iil-type semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5481785A true JPS5481785A (en) | 1979-06-29 |
Family
ID=15492914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15025477A Pending JPS5481785A (en) | 1977-12-13 | 1977-12-13 | Iil-type semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5481785A (en) |
-
1977
- 1977-12-13 JP JP15025477A patent/JPS5481785A/en active Pending
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