JPS57164559A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57164559A
JPS57164559A JP56049921A JP4992181A JPS57164559A JP S57164559 A JPS57164559 A JP S57164559A JP 56049921 A JP56049921 A JP 56049921A JP 4992181 A JP4992181 A JP 4992181A JP S57164559 A JPS57164559 A JP S57164559A
Authority
JP
Japan
Prior art keywords
epitaxial layer
integrated circuit
linear
depth
piled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56049921A
Other languages
Japanese (ja)
Inventor
Tadashi Ikeda
Ryusuke Iwamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56049921A priority Critical patent/JPS57164559A/en
Publication of JPS57164559A publication Critical patent/JPS57164559A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Abstract

PURPOSE:To make the coexistence of a linear integrated circuit and an I<2>L integrated circuit whose element can be formed easily and which have high operation speed and high dielectric strength enabled by a method wherein the depths of the base regions of the linear part and the I<2>L part are limited and difference is made between respective impurity densities of the respective piled epitaxial layers. CONSTITUTION:A linear element 11 and an I<2>L12 are made coexist on a semiconductor layer which consists of N type epitaxial layers 3 and 5 piled on a P<-> semiconductor substrate 1. At that time, the depth of the base region 81 of the linear element 11 and the depth of the injector region 83 and the base region 82 of the I<2>L12 are smaller than the thickness of the epitaxial layer 5 by t1 and t3 respectively. The purpose of this composition is to limit the depths of respective elements within the epitaxial layer 5 and suppress the dispersion to the direction of depth. Moreover, impurity density of the epitaxial layer 5 is designed to be higher than that of the epitaxial layer 3. With this constitution, improvement of dielectric strength of the linear element 11 and improvement in the operation speed of the I<2>L are simultaneously obtained.
JP56049921A 1981-04-02 1981-04-02 Semiconductor integrated circuit device Pending JPS57164559A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56049921A JPS57164559A (en) 1981-04-02 1981-04-02 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56049921A JPS57164559A (en) 1981-04-02 1981-04-02 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57164559A true JPS57164559A (en) 1982-10-09

Family

ID=12844473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56049921A Pending JPS57164559A (en) 1981-04-02 1981-04-02 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57164559A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52154383A (en) * 1976-06-18 1977-12-22 Hitachi Ltd Semiconductor integrated circuit device
JPS5413279A (en) * 1977-07-01 1979-01-31 Hitachi Ltd Manufacture for semiconductor integrated circuit device
JPS54127689A (en) * 1978-03-27 1979-10-03 Toshiba Corp Semiconductor integrated circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52154383A (en) * 1976-06-18 1977-12-22 Hitachi Ltd Semiconductor integrated circuit device
JPS5413279A (en) * 1977-07-01 1979-01-31 Hitachi Ltd Manufacture for semiconductor integrated circuit device
JPS54127689A (en) * 1978-03-27 1979-10-03 Toshiba Corp Semiconductor integrated circuit

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