JPS61168224A - Formation of metallic wiring layer - Google Patents
Formation of metallic wiring layerInfo
- Publication number
- JPS61168224A JPS61168224A JP60007975A JP797585A JPS61168224A JP S61168224 A JPS61168224 A JP S61168224A JP 60007975 A JP60007975 A JP 60007975A JP 797585 A JP797585 A JP 797585A JP S61168224 A JPS61168224 A JP S61168224A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- metal wiring
- wiring layer
- transparent
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、アモルファスシリニｌンデバイスで用いられ
る透明電極の一部に接続する金属配線層の形成方法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for forming a metal wiring layer connected to a part of a transparent electrode used in an amorphous silicone device.
従来の技術
近年、アモルファスシリコン（ａ −８ｉ ＞を用いた
太陽電池や光センサは重要視されてきている。BACKGROUND OF THE INVENTION In recent years, solar cells and optical sensors using amorphous silicon (a-8i>) have been gaining importance.
以下、図面を参照しながら、従来のａ−３ｉ光吐ンザで
の透明電極とＡ Ｌ配線どの接続部の形成方法について
説明する。Hereinafter, with reference to the drawings, a method of forming a connection portion between a transparent electrode and an AL wiring in a conventional a-3i optical emitter will be described.
第３図は従来の透明電極の一部に接続する金属配線層、
の形成方法で作ったａ−１３ｉ光センサの模式的断面図
を示す。第３図において、１は基板、２は下部電極、３
はａ−３＋、４はＩＴＯ（１’ｎ。Figure 3 shows a metal wiring layer connected to a part of a conventional transparent electrode.
A schematic cross-sectional view of an a-13i optical sensor made by the method described above is shown. In FIG. 3, 1 is a substrate, 2 is a lower electrode, and 3
is a-3+, 4 is ITO (1'n.
３ｎの酸化物）やＳｎＯ２などによる透明電極、５はＡ
１などによる金属配線、７は絶縁層である。3n oxide) or SnO2, etc., 5 is A
1 and the like, and 7 is an insulating layer.
発明が解決しようとＪる問題点
このように構成されたａ−３ｉ光センサでは透明電極４
とＡＬｉｉ！線５との密着性が悪いため、透明電極４上
のＡｌ１が剥離し、透明電極４とＡＬ配線５との電気的
コンタクトが不十分になる欠点を有していた。Problems to be Solved by the Invention In the a-3i optical sensor configured in this way, the transparent electrode 4
and ALii! Due to poor adhesion to the wire 5, the Al1 on the transparent electrode 4 peels off, resulting in insufficient electrical contact between the transparent electrode 4 and the AL wiring 5.
本発明は上記欠点に鑑み、ａ−３ｉデバイスで用いられ
る透明電極と金属配線との密着性が優れた金属配′＄９
層の形成方法を提供することを目的とするものである。In view of the above-mentioned drawbacks, the present invention provides a metal interconnect with excellent adhesion between the transparent electrode and the metal interconnect used in the a-3i device.
The object of the present invention is to provide a method for forming a layer.
問題を解決するための手段
この問題点を解決づるために本発明の金属配線層の形成
方法は、透明電極と金属配線との間にＣｒ金属を中間層
としてはさむものであり、これによって透明電極と金属
配線との密着性が非常に向上する。Means for Solving the Problem In order to solve this problem, the method for forming a metal wiring layer of the present invention is to sandwich a Cr metal as an intermediate layer between a transparent electrode and a metal wiring, whereby the transparent electrode The adhesion between the metal wiring and the metal wiring is greatly improved.
実施例
以下、本発明の一実施例について、図面を参照しながら
説明する。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図は本発明の第１の実施例における金属配線層の形
成方法を利用して作ったａ−８ｉセンサの模式的断面図
を示す。第１図において、１１は基板、１２は下部電極
、１３はａ−３ｉ、１４はＩＴＯや５ｒｌＯ２などによ
る透明電極、１５はＡＬなどによる金属配線、１ＧはＣ
ｒ金属、１７は絶縁層である。FIG. 1 shows a schematic cross-sectional view of an a-8i sensor manufactured using the method for forming a metal wiring layer according to the first embodiment of the present invention. In Figure 1, 11 is a substrate, 12 is a lower electrode, 13 is a-3i, 14 is a transparent electrode made of ITO or 5rlO2, 15 is a metal wiring made of AL etc., 1G is C
r metal; 17 is an insulating layer;
このように構成されたａ−８ｉ光センザでの金属配線層
の形成方法では、八し金属配線１５を、中間層として設
けたＣｒ金属１６を介して透明電極１４の１に形成する
。In the method for forming a metal wiring layer in the a-8i optical sensor configured as described above, a metal wiring 15 is formed on one of the transparent electrodes 14 via a Cr metal 16 provided as an intermediate layer.
本実施例によれば、透明電極Ｃ「金属の密着性は良く、
また、Ｃｒ金属とＡｍ金属配線との密着性も良いため、
透明電極１４とＡ１−金属配線１５との問に、Ｃｒ金属
１Ｇによる中間層を介装することにより、透明電極１４
とへ１−金属配線１５との密着性を良くすることができ
る。According to this embodiment, the transparent electrode C "has good metal adhesion;
In addition, since the adhesion between Cr metal and Am metal wiring is good,
By interposing an intermediate layer of Cr metal 1G between the transparent electrode 14 and the A1-metal wiring 15, the transparent electrode 14
It is possible to improve the adhesion between the metal wiring 15 and the metal wiring 15.
次に、本発明の第２の実施例について、図面を参照しな
がら説明する１、第２図は本発明の金属配線層の形成方
法を利用して作った第２の実施例におけるａ−３ｉ光レ
ンサの模式的断面図を示す。Next, a second embodiment of the present invention will be explained with reference to the drawings. Figures 1 and 2 show a-3i in the second embodiment made using the method of forming a metal wiring layer of the present invention. A schematic cross-sectional view of an optical lens is shown.
第２図などにおいて、２１はガラス基板、２２はＩＴＯ
やＳｎＯ２などの透明金属よりなる下部電極、２３はａ
−８ｔ１２４はＣｒ金属、２５はＡＬなどによる金属配
線、２７は絶縁層である。In Figure 2 etc., 21 is a glass substrate, 22 is an ITO
A lower electrode made of a transparent metal such as or SnO2, 23 is a
-8t 124 is a Cr metal, 25 is a metal wiring made of AL or the like, and 27 is an insulating layer.
第１図の構成と異なるのは、下部電極に透明金属を利用
して、Ｌ！板方向から光を入用さセるａ−３ｉ光センサ
に、本発明の金属配線層の形成方法を応用した点て・あ
る１゜
本実施例によれば、Ａｍ金属配線２５を、中間層として
説けたＣｒ金属２４を介して透明金属よりなる下部電極
２２の上に形成することにより、透明金属とＡｍ金属配
線どの密ｒ）性を良くすることができる。The difference from the configuration shown in FIG. 1 is that a transparent metal is used for the lower electrode, and L! One point in which the method for forming a metal wiring layer of the present invention is applied to an A-3i optical sensor that receives light from the plate direction.According to this embodiment, the Am metal wiring 25 is By forming the Cr metal 24 on the lower electrode 22 made of a transparent metal, the density between the transparent metal and the Am metal wiring can be improved.
なお、第１および第２の実施例ではａ−８ｉ光センサに
応用したところを示したが、ａ−３ｉ光センサに限られ
るものでなく、透明金属とＡ１−金属配線との結線を有
するものであれば何でもよい。In addition, although the first and second embodiments show the application to the A-8i optical sensor, the application is not limited to the A-3i optical sensor, but can also be applied to a sensor having a connection between a transparent metal and an A1-metal wiring. Anything is fine.
例えば、ａ −ｓ＊ ＴＰＴを用いた７１〜リツクス型
液晶デイスプレイなどにも本発明は応用出来るものであ
る。For example, the present invention can be applied to a 71-60x type liquid crystal display using a-s* TPT.
発明の効果
以上のように本発明は、透明金属とＡｍ金属配線をＣｒ
金属による中間層を介して接続することにより、透明金
属とＡＬ金金属との密着性を白土することができ、その
実用的効果は大なるものがある。Effects of the Invention As described above, the present invention provides transparent metal and Am metal wiring with Cr.
By connecting through a metal intermediate layer, it is possible to improve the adhesion between the transparent metal and the AL gold metal, which has a great practical effect.
第１図および第２図はそれぞれ本発明の一実施例におけ
る金属配線層の形成方法で作られたａ−８１光センサの
模式的断面図、第３図は従来の金属配線層の形成方法で
作られたａ−８ｉ光センサの模式的断面図である。
１１、２１・・・基板、１２・・・下部電極、１３．２
３・・・ａ−一 ５ −
８ｉ 、 １４．２２・・・透明金属による電極、１５
．２５・・・Ａｍ金属配線、１６．２４−Ｏｒ金属
代理人 森 本 義 弘
−〇−FIGS. 1 and 2 are schematic cross-sectional views of an A-81 optical sensor manufactured using a metal wiring layer forming method according to an embodiment of the present invention, and FIG. 3 is a schematic cross-sectional view of an A-81 optical sensor manufactured using a conventional metal wiring layer forming method. FIG. 3 is a schematic cross-sectional view of the manufactured a-8i optical sensor. 11, 21... Substrate, 12... Lower electrode, 13.2
3...a-1 5-8i, 14.22... Electrode made of transparent metal, 15
．． 25...Am metal wiring, 16.24-Or metal agent Yoshihiro Morimoto-〇-
Claims (1)
を介して接続する金属配線層の形成方法。 ２、透明金属が、ＩＴＯ（Ｉｎ、Ｓｎの酸化物）または
ＳｎＯ＿２であることを特徴とする特許請求の範囲第１
項記載の金属配線層の形成方法。[Claims] 1. A method for forming a metal wiring layer that connects a transparent metal and an AL metal wiring via an intermediate layer made of Cr metal. 2. Claim 1, wherein the transparent metal is ITO (In, Sn oxide) or SnO_2
A method for forming a metal wiring layer as described in .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60007975A JPS61168224A (en) | 1985-01-18 | 1985-01-18 | Formation of metallic wiring layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60007975A JPS61168224A (en) | 1985-01-18 | 1985-01-18 | Formation of metallic wiring layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61168224A true JPS61168224A (en) | 1986-07-29 |
Family
ID=11680458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60007975A Pending JPS61168224A (en) | 1985-01-18 | 1985-01-18 | Formation of metallic wiring layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61168224A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6440881U (en) * | 1987-09-05 | 1989-03-10 | ||
| US5032531A (en) * | 1988-07-08 | 1991-07-16 | Hitachi, Ltd. | Method of manufacturing active matrix panel |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5144394A (en) * | 1974-10-15 | 1976-04-15 | Nippon Telegraph & Telephone |
-
1985
- 1985-01-18 JP JP60007975A patent/JPS61168224A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5144394A (en) * | 1974-10-15 | 1976-04-15 | Nippon Telegraph & Telephone |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6440881U (en) * | 1987-09-05 | 1989-03-10 | ||
| JPH0425729Y2 (en) * | 1987-09-05 | 1992-06-19 | ||
| US5032531A (en) * | 1988-07-08 | 1991-07-16 | Hitachi, Ltd. | Method of manufacturing active matrix panel |
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