JPS61163671A - Thin-film solar cell - Google Patents

Thin-film solar cell

Info

Publication number
JPS61163671A
JPS61163671A JP60005170A JP517085A JPS61163671A JP S61163671 A JPS61163671 A JP S61163671A JP 60005170 A JP60005170 A JP 60005170A JP 517085 A JP517085 A JP 517085A JP S61163671 A JPS61163671 A JP S61163671A
Authority
JP
Japan
Prior art keywords
electrode
output terminal
solar cell
film solar
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60005170A
Other languages
Japanese (ja)
Inventor
Takashi Arita
有田 孝
Michio Osawa
道雄 大沢
Koshiro Mori
森 幸四郎
Zenichiro Ito
伊藤 善一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60005170A priority Critical patent/JPS61163671A/en
Publication of JPS61163671A publication Critical patent/JPS61163671A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

PURPOSE:To increase the area of an output terminal, to connect a lead wire and an element easily and to improve reliability by extending a first electrode and a second electrode holding amorphous Si up to the back through the side surface of an insulating substrate. CONSTITUTION:First electrodes 2, an a-Si layer 3, a second electrode 4 con sisting of ITO, etc. and a protective film 5 are formed onto an insulating sub strate 1 in succession. The first electrodes 2 and the second electrode 4 are shaped through an electron beam evaporation method, etc. by using a mask, and these electrodes 2, 4 are extended up to the back through a side surface and output terminal sections 6 are formed on the back side. Accordingly, lead wires and an element are connected easily, thus improving reliability.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、薄膜太陽電池に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to thin film solar cells.

従来の技術 従来、仁の種の薄膜太陽電池は第4図に示すような構成
であった。第4図において、1はガラス、セラミック、
ポリイミドフィルム等の絶縁基板である。3は光発電に
寄与する電子、正孔を発生せしめる非晶質シリコン層で
あシ、一般にはボロンがドープされたp型非晶質シリコ
ン層、アンドープ膜である!型非晶質シリコン層、リン
がドープシ+1?F −JFIζヨム1箭、’t u 
−w ”/鷹^っミ講、た長−ブー9る。2.4は非晶
質シリコン層を挾んで対向する第1電極および第2電極
であり、絶縁基板1が透光性に優れた基板、たとえばガ
ラス基板のような場合には第1電極は、I T O、5
n02等の透明導電膜であり、笹2電極はアルミニウム
、銀、クロム等の金属が使用される。また絶縁基板1が
透光性を持たないセラミック、ポリイミドフィルム基板
等の場合には、透光性基板の場合とは逆に第1電極はア
ルミニウム、銀、クロム等の金属から成り、第2電極は
I T O、5n02 等の透明導電膜が使用されるの
が一般である。6は保護膜であシ、エポキシ樹脂等がス
゛クリーン印刷により塗布されるが、絶縁基板1が透光
性を持たない基板の場合には保護膜6は光の入射側とな
るので透明樹脂等からなる透明な保護膜が形成されなけ
ればならない。6は出力端子部である。
2. Description of the Related Art Conventionally, a thin-film solar cell of the Renotane type has a structure as shown in FIG. In Figure 4, 1 indicates glass, ceramic,
This is an insulating substrate such as polyimide film. 3 is an amorphous silicon layer that generates electrons and holes that contribute to photovoltaic power generation, and is generally a p-type amorphous silicon layer doped with boron, or an undoped film! Type amorphous silicon layer, phosphorus doped +1? F -JFIζYom1, 'tu
2.4 is a first electrode and a second electrode facing each other with an amorphous silicon layer in between, and the insulating substrate 1 has excellent translucency. In the case of a substrate such as a glass substrate, the first electrode is ITO,5
It is a transparent conductive film such as n02, and metal such as aluminum, silver, chromium, etc. is used for the bamboo 2 electrode. Further, when the insulating substrate 1 is made of a ceramic, polyimide film substrate, etc. that does not have translucency, the first electrode is made of a metal such as aluminum, silver, or chromium, and the second electrode is made of a metal such as aluminum, silver, or chromium. Generally, a transparent conductive film such as ITO, 5n02, etc. is used. A protective film 6 is coated with epoxy resin or the like by screen printing, but if the insulating substrate 1 is a non-transparent substrate, the protective film 6 is on the light incident side, so it is coated with a transparent resin or the like. A transparent protective film must be formed. 6 is an output terminal section.

発明が解決しようとする問題点 このような従来の構成では、起電力を取シ出す出力端子
部6が、薄膜太陽電池の両端にあるためリードm ft
5jlJ aに2ケ所に八にけれげ外ら外布つた。また
、基板上に構成する発電領域を大きくしたいという要求
があり、そのためには、出力端子部6の面積を小さくす
る以外に方法がなかった。
Problems to be Solved by the Invention In such a conventional configuration, since the output terminal portions 6 for extracting electromotive force are located at both ends of the thin film solar cell, the leads m ft
At 5jlJ a, there were 8 kerege outside cloth ivy in 2 places. Furthermore, there is a demand for increasing the power generation area configured on the board, and the only way to achieve this is to reduce the area of the output terminal section 6.

端子部の面積が小さくなればなる程、信頼性の面で接触
不良等の問題が生じる可能性が増す。このことは腕時計
用の太陽電池のように小型のものについてはなおさらで
ある。また透光性基板を用いない場合には、基板の受光
面側と同一面上に出力端子部を設けることになり、電子
機器への組込みにおけるリード線の取り方も難かしい。
The smaller the area of the terminal portion, the greater the possibility that problems such as poor contact will occur in terms of reliability. This is especially true for small devices such as solar cells for wristwatches. Furthermore, if a translucent substrate is not used, the output terminal portion will be provided on the same surface as the light-receiving surface of the substrate, making it difficult to take lead wires when incorporating it into electronic equipment.

本発明は、上記の欠点を解決した薄膜太陽電池を提供す
ることを目的とするものである。
An object of the present invention is to provide a thin film solar cell that solves the above-mentioned drawbacks.

問題点を解決するための手段 この問題点を解決するために本発明は、第1電極および
第2電極を基板の側面を経て裏面側まで延長して形成し
、その一部より出力を取シ出そうとするものである。
Means for Solving the Problem In order to solve this problem, the present invention extends the first electrode and the second electrode through the side surface of the substrate to the back side, and outputs from a part of the electrode. It's something I'm trying to release.

作用 この構成により、太陽電池を形成した側とは反対側の基
板表面の任意の位置に出力端子部を設けることができ、
かつ端子としての電極の大きさを大きくすることができ
る。
Function: With this configuration, the output terminal portion can be provided at any position on the surface of the substrate opposite to the side on which the solar cells are formed.
Moreover, the size of the electrode as a terminal can be increased.

実施例 以下1本発明の第1実施例を図面を参照しながら説明す
る。第1図(a) 、 (b) 、 (C)は本発明の
一実施例による薄膜太陽電池の上面図、下面図、断面図
である。図中1はセラミック、ポリイミド樹脂フィルム
等の絶縁基板であり、2はアルミニウム。
Embodiment 1 A first embodiment of the present invention will be described below with reference to the drawings. FIGS. 1A, 1B, and 1C are a top view, a bottom view, and a sectional view of a thin film solar cell according to an embodiment of the present invention. In the figure, 1 is an insulating substrate such as ceramic or polyimide resin film, and 2 is aluminum.

銀、クロム等の第1電極で、電子ビーム蒸着法等により
絶縁基板1の両面を適当にマスクすることによって、基
板の側面を経て裏面側まで延長して形成される。3は非
晶質シリコン層、4は第2電極であり、I T O、5
n02等の透明導電膜が用いられるが、第1電極と同様
に電子ビーム蒸着法等によシ、適当にマスクを施すこと
により、非晶質シリコン層の上面より、基板の側面を経
て裏面側まで延長して蒸着形成される。5は保護膜であ
シ。
A first electrode made of silver, chromium, or the like is formed by appropriately masking both sides of the insulating substrate 1 using an electron beam evaporation method or the like so as to extend through the side surface of the substrate to the back surface side. 3 is an amorphous silicon layer, 4 is a second electrode, I T O, 5
A transparent conductive film such as N02 is used, and by applying an appropriate mask using electron beam evaporation, etc., as with the first electrode, it is possible to coat the film from the top surface of the amorphous silicon layer, through the side surface of the substrate, and to the back surface side. It is formed by vapor deposition extending up to the point. 5 is a protective film.

素子の表面に透明樹脂がスクリーン印刷法によシ全面塗
布される。上記のような方法によれば、出力端子部6は
基板の裏面側に設けることができ、第2図(、) 、 
(b)のような任意のパターン、大きさのものを形成す
ることが可能となる。加えて、透明樹脂のバターニング
も不要となるというメリットも生じる。また一度に基板
の両面に蒸着するかわりに、最初に第2図(a) 、 
(b)のようなパターンの出力端子部を基板の裏面に蒸
着形成しておき、素子面の第1電極、第2電極を形成す
る時に蒸着原子の基板裏面へのまわり込みを利用して接
続しても同様の効果が得られる。
A transparent resin is applied to the entire surface of the element by screen printing. According to the above method, the output terminal section 6 can be provided on the back side of the board, and as shown in FIG.
It becomes possible to form any pattern and size as shown in (b). In addition, there is also the advantage that buttering of the transparent resin is not required. Also, instead of depositing on both sides of the substrate at once,
The output terminal part with the pattern shown in (b) is formed by vapor deposition on the back surface of the substrate, and when forming the first and second electrodes on the element surface, connections are made by utilizing the wraparound of the vapor deposited atoms to the back surface of the substrate. The same effect can be obtained.

第3図(iり 、 (b)は、第1図とは異なった他の
一般的なセル間の直列接続構造をもつ薄膜太陽電池に本
発明を適用した場合の、上面図および断面図を示すもの
である。第3図(a)、[有])において1〜eは第1
図と同様の機能を果すものである。同図のような構成に
すれば、出力端子部を裏面に設けることにより、太陽電
池の光発電部の受光面積を基板全体にわたLぐらいに大
きくすることが可能となる。
Figure 3(i) and (b) show a top view and a cross-sectional view when the present invention is applied to a thin film solar cell having a general series connection structure between cells, which is different from that shown in Figure 1. In Fig. 3(a), 1 to e are the first
It performs the same function as the one shown in the figure. With the configuration shown in the figure, by providing the output terminal section on the back surface, it is possible to increase the light receiving area of the photovoltaic section of the solar cell to about L over the entire substrate.

発明の効果 第1電極と第2電極を絶縁基板の裏面側まで延長して形
成し、一部を出力取り出し電極とすることによシ出力端
子部を裏面の任意の位置に設けることができ、かつその
面積を大きくすることもできるため、リード線と素子と
の接続が容易になり、信頼性が向上するという効果が得
られる。
Effects of the Invention By forming the first electrode and the second electrode to extend to the back side of the insulating substrate and using a part as the output extraction electrode, the output terminal portion can be provided at any position on the back side, Moreover, since the area can be increased, the connection between the lead wire and the element becomes easier, and reliability is improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a) 、 (b) 、 (t−)は本発明の一
実施例による薄膜太陽電池を示す上面図、下面図、断面
図、第2図(a) 、 (b)は基板の裏面に形成した
任意のパターンの出力端子部を示す上面図、第3図(a
)、[有])は本発明の他の実施例を示す薄膜太陽電池
の上面図および断面図、第4図は従来の薄膜太陽電池を
示す上面図である。 1・・・・・・絶縁基板、2・・・・・・第1電極、3
・・・・・・非晶質シリコン層、4・・・・・・第2電
極、6・・・・・・保護膜。 6・・・・・・出力端子部。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第 
2rXI 6i=−土xljh硅p (CL) 第3図 (br    4     6
FIGS. 1(a), (b), and (t-) are a top view, a bottom view, and a cross-sectional view of a thin film solar cell according to an embodiment of the present invention, and FIGS. 2(a) and (b) are views of a substrate. A top view showing the output terminal part of an arbitrary pattern formed on the back surface, FIG.
), [Yes]) are a top view and a sectional view of a thin film solar cell showing another embodiment of the present invention, and FIG. 4 is a top view showing a conventional thin film solar cell. 1... Insulating substrate, 2... First electrode, 3
. . . Amorphous silicon layer, 4 . . . Second electrode, 6 . . . Protective film. 6... Output terminal section. Name of agent: Patent attorney Toshio Nakao and 1 other person
2rXI 6i=-earthxljh硅p (CL) Fig. 3 (br 4 6

Claims (1)

【特許請求の範囲】[Claims] 非晶質シリコン層を挾持した第1電極および第2電極を
、絶縁基板上に形成した薄膜太陽電池であって、前記第
1、第2電極を前記絶縁基板の側面を経て、裏面まで延
長した薄膜太陽電池。
A thin film solar cell in which a first electrode and a second electrode sandwiching an amorphous silicon layer are formed on an insulating substrate, the first and second electrodes extending through the side surface of the insulating substrate to the back surface. Thin film solar cells.
JP60005170A 1985-01-16 1985-01-16 Thin-film solar cell Pending JPS61163671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60005170A JPS61163671A (en) 1985-01-16 1985-01-16 Thin-film solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60005170A JPS61163671A (en) 1985-01-16 1985-01-16 Thin-film solar cell

Publications (1)

Publication Number Publication Date
JPS61163671A true JPS61163671A (en) 1986-07-24

Family

ID=11603758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60005170A Pending JPS61163671A (en) 1985-01-16 1985-01-16 Thin-film solar cell

Country Status (1)

Country Link
JP (1) JPS61163671A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02260577A (en) * 1989-03-31 1990-10-23 Teijin Ltd Manufacture of amorphous silicon solar cell
JP2006128574A (en) * 2004-11-01 2006-05-18 Shinko Electric Ind Co Ltd Solar battery cell and its manufacturing method, solar battery module, and its manufacturing method
JP2009508624A (en) * 2005-09-21 2009-03-05 エソテリック・ゴルフ・テクノロジー・インターナショナル・アクチボラゲット Golf putting training equipment
JP2013536997A (en) * 2010-09-01 2013-09-26 エルジー イノテック カンパニー リミテッド Solar cell and solar cell module including the same
CN105659391A (en) * 2013-09-17 2016-06-08 Lg伊诺特有限公司 Solar battery module

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02260577A (en) * 1989-03-31 1990-10-23 Teijin Ltd Manufacture of amorphous silicon solar cell
JP2006128574A (en) * 2004-11-01 2006-05-18 Shinko Electric Ind Co Ltd Solar battery cell and its manufacturing method, solar battery module, and its manufacturing method
JP2009508624A (en) * 2005-09-21 2009-03-05 エソテリック・ゴルフ・テクノロジー・インターナショナル・アクチボラゲット Golf putting training equipment
JP2013536997A (en) * 2010-09-01 2013-09-26 エルジー イノテック カンパニー リミテッド Solar cell and solar cell module including the same
EP2610921A4 (en) * 2010-09-01 2018-01-03 LG Innotek Co., Ltd. Solar cell and solar cell module including same
CN105659391A (en) * 2013-09-17 2016-06-08 Lg伊诺特有限公司 Solar battery module
US10236823B2 (en) 2013-09-17 2019-03-19 Lg Innotek Co., Ltd. Solar battery module

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