JPS60107872A - Photoelectromotive force device - Google Patents
Photoelectromotive force deviceInfo
- Publication number
- JPS60107872A JPS60107872A JP58216996A JP21699683A JPS60107872A JP S60107872 A JPS60107872 A JP S60107872A JP 58216996 A JP58216996 A JP 58216996A JP 21699683 A JP21699683 A JP 21699683A JP S60107872 A JPS60107872 A JP S60107872A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- film
- solar cell
- transparent
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000004744 fabric Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000000853 adhesive Substances 0.000 abstract description 4
- 230000001070 adhesive effect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000010248 power generation Methods 0.000 description 7
- 229920002620 polyvinyl fluoride Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000131 polyvinylidene Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は光起電力装置に関する。さらに詳しくは、複数
の太陽電池素子の接続に、太陽電池素子の保護膜となる
透明フィルムまたはガラス板に設けられた接続電極を用
いたことを特徴とする光起電力装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to photovoltaic devices. More specifically, the present invention relates to a photovoltaic device characterized in that connection electrodes provided on a transparent film or glass plate serving as a protective film for the solar cell elements are used to connect a plurality of solar cell elements.
従来から使用されている集積型太陽電池は、同一基板上
に複数の太陽電池素子を設け、該太陽電池素子を該基板
上で接続電極により接続したのち保護層を形成して製造
されるのが常である。たとえばＳＵＳ板のような金ｒ６
基板を用いたインバーティド（１ｎｖｅｒｔｅｄ）型太
陽電池のようなばあいには、第６図に示すように、金属
基板（９）に絶縁層◇０）が設けられたのち金Ｍ電極（
８）が設けられているため、絶縁層に生じたピンホール
やクラックなどにより、製造される太陽電池の歩留りが
おちたり、金馬基板／絶縁層／下部電極層／発電領域／
上部透明電極層／保護膜層と６層からなる多層構造であ
るため、脚数工程が長いなどの欠点を有している。Conventionally used integrated solar cells are manufactured by providing a plurality of solar cell elements on the same substrate, connecting the solar cell elements with connection electrodes on the substrate, and then forming a protective layer. Always. For example, gold r6 like SUS plate
In the case of an inverted type solar cell using a substrate, as shown in Fig. 6, an insulating layer ◇0) is provided on a metal substrate (9), and then a gold M electrode (
8), pinholes or cracks that occur in the insulating layer may reduce the yield of manufactured solar cells, or damage the Kinba substrate/insulating layer/lower electrode layer/power generation area/
Since it has a multilayer structure consisting of six layers including an upper transparent electrode layer and a protective film layer, it has drawbacks such as a long process for the number of legs.
本発明者らは上記のごとき実情にで１６み鋭意研究を重
ねた結果、複数の太陽電池素子の直列または並列接続に
、太陽電池素子の保護膜となる透明フィルムまたはガラ
ス板に設けられた接続電極を用いることにより、前記諸
欠点を解消しうろことを見出し、本発明を完成した。The inventors of the present invention have conducted extensive research on the above-mentioned circumstances, and have found that connections provided on a transparent film or glass plate that serves as a protective film for solar cell elements can be used to connect multiple solar cell elements in series or in parallel. The inventors discovered that the above-mentioned drawbacks could be overcome by using electrodes, and completed the present invention.
すなわち本発明においては、複数の個別の太陽電池素子
を用いたことにより、同一金属基板上に集積するタイプ
の太陽電池のように絶縁層を設ける必要がなく、シたが
って絶縁層を設けることによるピンホールやクランクな
どにより製造される太陽電池の歩留りがおちることもな
く、また金属基板／発電領域／上部透明電極の３層で太
陽電池素子が製造でき、かつ金属電極を直列接続のため
にパターン化することも必要でなくなる。さらに、太陽
電池素子の保護膜となる透明フィルムまたはガラス板に
設けられた接続電極を用いて該素子を接続するため、太
陽電池素子の接続と保調層の形成とが一度にでき、製造
工程の短縮をはかることができる。That is, in the present invention, by using a plurality of individual solar cell elements, there is no need to provide an insulating layer unlike a type of solar cell that is integrated on the same metal substrate. The yield of solar cells manufactured by pinholes and cranks does not deteriorate, and solar cell elements can be manufactured with three layers: metal substrate / power generation area / upper transparent electrode, and patterns are required to connect the metal electrodes in series. It is no longer necessary to convert Furthermore, since the solar cell elements are connected using connection electrodes provided on a transparent film or glass plate that serves as a protective film for the solar cell elements, connection of the solar cell elements and formation of the conditioning layer can be performed at the same time, and the manufacturing process can be shortened.
本発明に用いる太陽′電池素子としては、たとえばＳＵ
Ｓ ＳＡｌ、Ｎ１、ＯｕｌＣｒＳＭｏなどの金属電極上
に、クリスタルシリコン、ポリシリコン、アモルファス
シリコン、アモルファスシリコンカーバイド、アモルフ
ァスシリコンナイトライド、アモルファスシリコンゲル
マン、微結晶化シリコンなどのシリコン系半導体からな
る発電領域が設けられ、その上に工Ｔｏ、工Ｔｏ／Ｓｎ
Ｏ２、工ｎ ２０３、ＳｎＯ２などの透明電極層が形成
された単一の０．１〜２０ｃｍ 程度の太陽電池素子が
あげられるが、これちに限定されるものではない。As the solar cell element used in the present invention, for example, SU
A power generation region made of a silicon-based semiconductor such as crystal silicon, polysilicon, amorphous silicon, amorphous silicon carbide, amorphous silicon nitride, amorphous silicon germane, or microcrystalline silicon is provided on a metal electrode such as SAl, N1, OulCrSMo, etc. and on top of that, Engineering To, Engineering To/Sn
Examples include, but are not limited to, a single solar cell element with a thickness of about 0.1 to 20 cm on which a transparent electrode layer of O2, N203, SnO2, etc. is formed.
本発明に用いる太陽電池素子の保護膜となる透明フィル
ムとしては、たとえばポリエステル、ポリビニルブチラ
ール、エチレン−酢酸ビニル共重合体、ポリフッ化ビニ
ル、ポリ塩化ビニリデン、ボリア゛ビ化ビニリデンなど
から形成された厚さ１０〜２０００μｍ１好ましくは２
０〜５００ｐｍで、可視部および紫外部の光の透過率が
大ぎく、優れた耐候性を有する透明フィルムがあげられ
る。The transparent film that serves as a protective film for the solar cell element used in the present invention may be made of, for example, polyester, polyvinyl butyral, ethylene-vinyl acetate copolymer, polyvinyl fluoride, polyvinylidene chloride, polyvinylidene polyvinylidene, or the like. Thickness: 10 to 2000 μm, preferably 2
A transparent film having a high transmittance of visible and ultraviolet light in the range of 0 to 500 pm and excellent weather resistance.
本発明に用いるガラス板は、通常太陽電池の基板または
保護膜として使用しうるガラス板であれば、とくに限定
されることなく使用しうる。The glass plate used in the present invention is not particularly limited as long as it can be used as a substrate or protective film for a solar cell.
前記透明フイ・ルムまたはガラス板には接続電極が設け
られているが、該接続電極はＡ７ＳＣｕ、工Ｔｏ、ＳＵ
Ｓなどを真空蒸着またはスパッタなどの方法により設け
られることができる。このばあい、マスクを用いてパタ
ーン化してもよいし、あとからエツチングによりパター
ン化してもよく、また銀ペーストなどの導電性ペースト
をスクリーン印刷などの方法を用いてフィルム上に印刷
してもよい。A connection electrode is provided on the transparent film or glass plate, and the connection electrode is made of A7SCu, TO, SU
S or the like can be provided by a method such as vacuum deposition or sputtering. In this case, patterning may be performed using a mask, patterning may be performed later by etching, or conductive paste such as silver paste may be printed on the film using a method such as screen printing. .
前記のようにして形成された電極は、個別の太陽電池素
子との接続抵抗を低く保ち、かつ透明フィルムまたはガ
ラス板との密着性を大きく保つという点からシート抵抗
が５Ｑ／Ｕ：Ｕ以下で、かつ電極の厚さが約１０００Ｘ
〜１０層ｍ程度であることが好ましい。The electrode formed as described above has a sheet resistance of 5Q/U:U or less in order to maintain low connection resistance with individual solar cell elements and high adhesion to the transparent film or glass plate. , and the electrode thickness is approximately 1000X
It is preferable that the number of layers is about 10 to 10 m.
本発明の光起電力装置は、前記のごとき太陽電池素子を
、たとえば２〜１０個、接続電極を形成した透明フィル
ムまたはガラス板の接続電極部分以外にエポキシ樹脂系
、シリコーン樹脂系などの接着剤を塗布してはりっけた
り、半硬化状態のフィルム上に接続電極を形成し、その
ままの状態で圧着し、そののち硬化させるなどの方法に
より作製される。The photovoltaic device of the present invention includes, for example, 2 to 10 solar cell elements as described above, and an adhesive such as an epoxy resin or a silicone resin in addition to the connection electrode portion of a transparent film or glass plate on which connection electrodes are formed. It is manufactured by coating and mounting, or by forming connection electrodes on a semi-cured film, press-bonding it as it is, and then curing it.
つぎに本発明の光起電力装置を図面を用いて説明する。Next, the photovoltaic device of the present invention will be explained using the drawings.
第１図は本発明に用いる接続電極を設けた透明フィルム
の一実施態様を示す説明図、第２図は本発明に用いる接
続電極を設けた透明フィルムの他の実施態様〜を示す説
明図、第３図は第１図に示す接続電極を設けた透明フィ
ルムと本発明に用いる太陽電池素子とから本発明の光起
電力装置を製造する方法の一例を示す説明図、第４図は
第２図に示す接続電極を設けた透明フィルムと本発明に
用いる太陽電池素子とから本発明の光起電力装置を製造
する方法の一例を示す説明図、第５図は本発明に用いる
太陽電池素子の一実施態様を示す説明図である。FIG. 1 is an explanatory diagram showing one embodiment of a transparent film provided with a connection electrode used in the present invention, FIG. 2 is an explanatory diagram showing other embodiments of a transparent film provided with a connection electrode used in the present invention, FIG. 3 is an explanatory diagram showing an example of a method for manufacturing the photovoltaic device of the present invention from the transparent film provided with the connection electrode shown in FIG. 1 and the solar cell element used in the present invention, and FIG. An explanatory diagram showing an example of a method for manufacturing the photovoltaic device of the present invention from a transparent film provided with connection electrodes as shown in the figure and a solar cell element used in the present invention. It is an explanatory diagram showing one embodiment.
第１図、第２図に示すように透明フィルム（１）上に接
続電極（２）が設けられている。第６図（ａ）に示す接
続電極（２）が設けられている透明フィルム（１）は、
第１図に示したものと同様のものであり、該フィルムの
接続電極（２）以外の部分にエポキシ樹脂系、シリコー
ン樹脂系などの透明性を有するノア着剤が塗布されてい
る。そののち第６図（ｂ）に示すように、取出し電極（
４）が接続電極（２）と接続するように、また第５図に
示すような透明電極（６）、発電領域（７）、金属電極
（８）からなる本発明に用いる太陽電池素子（３）の金
属電極（８）または透明電極（０）がＳ字型をした接続
電極の下の部分と接続するように設置される。設置され
た取出しγ１も極（４）および太陽電池素子（３）は透
明フィルムに塗布された接着剤により固定される。その
のち仮想ｍｌ （５） Ｇこそってフィルム（］）の上
半分が折り曲げられ、下半分部分にはりあわされる。フ
ィルム（１）の上半分の部分にも接続電極（２）の一部
が存在するため、この部分も折り曲げられ、第６図（０
）に示すように、該接続電極（２）の下に位置する太陽
電池素子の透明′ｎＬ極（θ）または金λＱ４電極（８
）と接触し、接続される。このようにして複数の太陽電
池素子が、透明フィルムに設けられた接続’ｔＩｊ、
ｌＱｉにより直列接続されるとともに、該透明フィルム
につつまれ、保護層が形成され、取出し′＋（（極を有
する本発明の光起電力装置が製造される。As shown in FIGS. 1 and 2, a connection electrode (2) is provided on a transparent film (1). The transparent film (1) provided with the connection electrode (2) shown in FIG. 6(a) is
It is similar to that shown in FIG. 1, and a transparent Noah adhesive such as an epoxy resin type or a silicone resin type is applied to the portion of the film other than the connecting electrode (2). After that, as shown in FIG. 6(b), the extraction electrode (
The solar cell element (3) used in the present invention consists of a transparent electrode (6), a power generation region (7), and a metal electrode (8) as shown in FIG. ) is installed so as to connect with the lower part of the S-shaped connection electrode. The installed extraction γ1 pole (4) and solar cell element (3) are fixed with an adhesive applied to a transparent film. After that, the upper half of the virtual ml (5) G is folded and attached to the lower half. Since a part of the connection electrode (2) is also present in the upper half of the film (1), this part is also bent, and as shown in FIG.
), the transparent 'nL pole (θ) or gold λQ4 electrode (8) of the solar cell element located under the connection electrode (2)
) and are connected. In this way, a plurality of solar cell elements are connected to the connections provided on the transparent film.
The photovoltaic device of the present invention having the electrodes is manufactured by connecting them in series through lQi, wrapping them in the transparent film, forming a protective layer, and taking out the electrodes.
第２図に示した接続電極（２）が設けられた透明フィル
ム（１）を用いて、第６図に示すばあいと同様にして、
第４図に示すような方法により本発明の他の実施態様で
ある光起電力装置が製造される。Using the transparent film (1) provided with the connection electrode (2) shown in FIG. 2, in the same manner as shown in FIG. 6,
A photovoltaic device according to another embodiment of the present invention is manufactured by the method shown in FIG.
なお前記のルＩＪ造において（Ｊ接続電極の殴りられた
透明フィルムを折り曲げて使用したが、折り曲げるかわ
りに２枚のフィルムまたはガラス板をはりあわせて本発
明の光起電力装置を製造してもよい。In the above-mentioned Le IJ construction (the punched transparent film of the J connection electrode was bent and used), the photovoltaic device of the present invention may also be manufactured by gluing two films or glass plates together instead of bending. good.
このようにして製造した光起電力装置は電卓などの民生
用太陽電池をはじめ、発電用の太陽電池など、に好適に
用いられうる。The photovoltaic device manufactured in this way can be suitably used for consumer solar cells such as calculators, solar cells for power generation, and the like.
なお本発明に用いる接続電極を設けた透明フィルムを用
いて、同一基板上に接続部を有する片面または両面電極
と半導体層からなる複数の発電領域を有する太陽電池を
接続してもよい。Note that the transparent film provided with the connection electrode used in the present invention may be used to connect a solar cell having a plurality of power generation regions each consisting of a single-sided or double-sided electrode having a connecting portion and a semiconductor layer on the same substrate.
このばあいには保護膜の厚さはフィルムまたはシートの
厚さで決まるため、寸法精度がでる上、透明電極のシー
ト抵抗により接続部の抵抗を充分低下さぜることかでき
ないという問題点を解消できる。さらに透明電極または
金属電極のパターン化に対しては高い精度を必要としな
くなり、作業性が向上する。In this case, the thickness of the protective film is determined by the thickness of the film or sheet, which not only improves dimensional accuracy but also solves the problem that the resistance of the connection part cannot be sufficiently lowered due to the sheet resistance of the transparent electrode. It can be resolved. Furthermore, high precision is no longer required for patterning transparent electrodes or metal electrodes, improving workability.
つぎに本ジ゛δ明の光起電力装置を実施例にもとづき説
明する。Next, the photovoltaic device of the present invention will be explained based on examples.
実施例１
厚さ１２５μｍのポリフッ化ビニルフィルムに、厚さ２
／）”１［（Ｊｌｍｍ 、個々の長さが約５ｍｍの第１
図に示すような形状にアルミニウムを電子ビーム蒸着さ
せた。えられた接続電極を設けたポリフッ化ビニルフィ
ルムの接続電極部分以外の部分にシリコーン接着剤（東
芝シリコーン（ｌ（１）製のＴＳＩＤ ６０３３）をス
クリーン印刷により厚さ１ｏｌ１ｍで塗布した。この−
りに第５図に示すように、厚さ０．２ｍｍのＳＵＳ板上
にｐ型アモルファスシリコンカーバイｌ’ 、１９アモ
ルファスシリコン、ｎ聖像結晶化シリコンをこの順番に
プラズマｃｖＤ法ことにより発電領域を形成したのち、
厚さ１０００Ａの工Ｔｏ透明電極をマスクを用いて電子
ビーム蒸着により形成し、■Ｔｏの形成されていない部
分を切断することによって、ＩＤｍｍＸｊ７ｍｍの大き
さの個別の太陽電池素子をえた。第６図（ｂ）に示すよ
うにこの太陽電池素子を６個接着させた。つぎに接続電
極の両端に導電性テープを用いて取出し電極を取付け、
そののち折り曲げて太陽電池素子およびフィルム同士を
接着することにより光起電力装置を作製した。Example 1 A polyvinyl fluoride film with a thickness of 125 μm was coated with a polyvinyl fluoride film having a thickness of 2
/)"1 [(Jlmm, the first one with an individual length of about 5 mm
Aluminum was electron beam evaporated into the shape shown in the figure. A silicone adhesive (TSID 6033 manufactured by Toshiba Silicone (l(1)) was applied to a thickness of 1 ol 1 m by screen printing on the polyvinyl fluoride film provided with the obtained connection electrode, except for the connection electrode part.
As shown in Fig. 5, p-type amorphous silicon carbide l', 19 amorphous silicon, and n-sacred crystallized silicon were deposited in this order on a 0.2 mm thick SUS plate by plasma CVD to create a power generation area. After forming the
A transparent electrode of 1000 A thick was formed by electron beam evaporation using a mask, and the portion where To was not formed was cut to obtain individual solar cell elements with a size of ID mm x 7 mm. As shown in FIG. 6(b), six solar cell elements were bonded together. Next, attach the extraction electrode to both ends of the connection electrode using conductive tape,
Thereafter, a photovoltaic device was produced by bending and adhering the solar cell element and the films together.
なお接続電極の約６Ｄ％が太陽゛ｍ池素子の電極部分と
重ねあわさっていた。Approximately 6D% of the connection electrode overlapped with the electrode portion of the solar cell element.
えられた光起電力装置を用いてＡＭ −１，１００ｍＶ
／ｃｍ”のソーラシミュレーターにて測定したところ、
ＶＯＱ＝２−５Ｖｓ工ｓｃ ＝ ２２ｍＡ 、 ＦＦ
＝ ０．６５であった。AM −1,100 mV using the photovoltaic device obtained
/cm” when measured with a solar simulator.
VOQ=2-5Vs engineering sc=22mA, FF
= 0.65.
第１図は本発明に用いる接続電極を設けた透明フィルム
の一実施態様を示す説明図、第２図は本発明に用いる接
続電極を設けた透明フィルムの他の実施態様を示す説明
図、第６図は第１図に示す接続電極を設けた透明フィル
ムと太陽電池素子とから本発明の光起電力装置を製造す
る方法の一例を示す説明図、第４図は第２図に示す接続
電極を設けた透明フィルムと太陽電池素子とから本発明
の光起電力装置を製造する方法の一例を示す説明図、第
５図は本発明に用いる太陽電池素子の一例を示す説明図
、第６図は従来から用いられている集積型太陽電池用の
基板に下部電極が設けられた説明図である。
（図面の主要符号）
（１）：透明フィルム
（２）：接続電極
（３）：太陽電池素子
第 １ 図
第 ２ 図
第４図FIG. 1 is an explanatory diagram showing one embodiment of a transparent film provided with connection electrodes used in the present invention, and FIG. 2 is an explanatory diagram showing another embodiment of a transparent film provided with connection electrodes used in the present invention. FIG. 6 is an explanatory diagram showing an example of a method for manufacturing the photovoltaic device of the present invention from a transparent film provided with the connection electrode shown in FIG. 1 and a solar cell element, and FIG. FIG. 5 is an explanatory diagram showing an example of a method for manufacturing a photovoltaic device of the present invention from a transparent film provided with a solar cell element and a solar cell element, FIG. 5 is an explanatory diagram showing an example of a solar cell element used in the present invention, and FIG. FIG. 1 is an explanatory diagram showing a conventionally used substrate for an integrated solar cell provided with a lower electrode. (Main symbols in the drawings) (1): Transparent film (2): Connection electrode (3): Solar cell element Figure 1 Figure 2 Figure 4
Claims (1)
保護膜となる透明フィルムまたはガラス板に設けられた
接続布１極を用いたことを特徴とする光起電力装置７″
ｊ０ ２ 前記太陽電池素子がアモルファスシリコン系または
微結晶化シリコン系牛導体で構成されている特許請求の
範囲第１項記載の光起電力装置。[Claims] 1. Multiple suns? A photovoltaic device 7'' characterized in that one pole of a connecting cloth provided on a transparent film or a glass plate serving as a protective film of a solar cell element is used to connect a solar cell element.
j0 2 The photovoltaic device according to claim 1, wherein the solar cell element is made of an amorphous silicon-based or microcrystalline silicon-based conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58216996A JPS60107872A (en) | 1983-11-16 | 1983-11-16 | Photoelectromotive force device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58216996A JPS60107872A (en) | 1983-11-16 | 1983-11-16 | Photoelectromotive force device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60107872A true JPS60107872A (en) | 1985-06-13 |
Family
ID=16697176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58216996A Pending JPS60107872A (en) | 1983-11-16 | 1983-11-16 | Photoelectromotive force device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60107872A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008508673A (en) * | 2004-07-27 | 2008-03-21 | ケンブリッジ ディスプレイ テクノロジー リミテッド | Stacked interconnects for organic opto-electronic devices |
| JP2009297488A (en) * | 2008-05-15 | 2009-12-24 | Keizo Kakui | Respirator for emergency |
| US20100116310A1 (en) * | 2006-10-13 | 2010-05-13 | Hitachi Chemical Company, Ltd. | Solar battery cell connection method and solar battery module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51110985A (en) * | 1975-03-25 | 1976-09-30 | Sharp Kk | |
| US4109271A (en) * | 1977-05-27 | 1978-08-22 | Rca Corporation | Amorphous silicon-amorphous silicon carbide photovoltaic device |
| JPS5779674A (en) * | 1980-09-09 | 1982-05-18 | Energy Conversion Devices Inc | Multiplex battery cell with amorphous photoresponsiveness |
| JPS57187973A (en) * | 1981-05-15 | 1982-11-18 | Agency Of Ind Science & Technol | Solar cell |
-
1983
- 1983-11-16 JP JP58216996A patent/JPS60107872A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51110985A (en) * | 1975-03-25 | 1976-09-30 | Sharp Kk | |
| US4109271A (en) * | 1977-05-27 | 1978-08-22 | Rca Corporation | Amorphous silicon-amorphous silicon carbide photovoltaic device |
| JPS5779674A (en) * | 1980-09-09 | 1982-05-18 | Energy Conversion Devices Inc | Multiplex battery cell with amorphous photoresponsiveness |
| JPS57187973A (en) * | 1981-05-15 | 1982-11-18 | Agency Of Ind Science & Technol | Solar cell |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008508673A (en) * | 2004-07-27 | 2008-03-21 | ケンブリッジ ディスプレイ テクノロジー リミテッド | Stacked interconnects for organic opto-electronic devices |
| US20100116310A1 (en) * | 2006-10-13 | 2010-05-13 | Hitachi Chemical Company, Ltd. | Solar battery cell connection method and solar battery module |
| US8809102B2 (en) * | 2006-10-13 | 2014-08-19 | Hitachi Chemical Company, Ltd. | Solar battery cell connection method and solar battery module |
| JP2009297488A (en) * | 2008-05-15 | 2009-12-24 | Keizo Kakui | Respirator for emergency |
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