JPS61116883A - Transparent electrode with metal wiring - Google Patents
Transparent electrode with metal wiringInfo
- Publication number
- JPS61116883A JPS61116883A JP59238848A JP23884884A JPS61116883A JP S61116883 A JPS61116883 A JP S61116883A JP 59238848 A JP59238848 A JP 59238848A JP 23884884 A JP23884884 A JP 23884884A JP S61116883 A JPS61116883 A JP S61116883A
- Authority
- JP
- Japan
- Prior art keywords
- transparent
- metal
- transparent electrode
- metal wiring
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 58
- 239000002184 metal Substances 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000011521 glass Substances 0.000 claims abstract description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000011787 zinc oxide Substances 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims abstract 3
- 239000010409 thin film Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 14
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 238000009713 electroplating Methods 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 18
- 230000007423 decrease Effects 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006853 SnOz Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- -1 as shown in FIG. 5 Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
【発明の詳細な説明】
産−の利 ！
未発明は、一般には透明電極に関するものであり、時計
の液晶ディスプレー及び車の曇止めガラス窓用としても
使用することができ、特にアモルファス太陽電池用とし
て好適に利用し得る金属配線付き透明電極に関するもの
である。更に詳しくごえば１本発明は透明絶縁基板上に
成膜される透明４電性薄膜に金属配線を施した太陽電池
用の透明電極として有効であり、本明細書では太陽電池
用透明電極についてのみ説明する。又１本明細書におい
て、アモルファス半導体とは微結晶化半導体をも含むも
のとする。[Detailed description of the invention] Benefits of production! The invention generally relates to transparent electrodes, which can be used for liquid crystal displays of watches and anti-fog glass windows of cars, and particularly relates to transparent electrodes with metal wiring that can be suitably used for amorphous solar cells. It is something. More specifically, 1. The present invention is effective as a transparent electrode for solar cells in which metal wiring is applied to a transparent four-electrode thin film formed on a transparent insulating substrate, and in this specification, only the transparent electrode for solar cells will be described. explain. Furthermore, in this specification, an amorphous semiconductor includes a microcrystalline semiconductor.
え釆立韮遺
近年、アモルファス半導体、例えばアモスファ）
オッ９．７人陽７０６よ（１）□膜アあ、ユよ、
っまり結晶化シリコンに比べ可視光域での吸収係数が大
きく、結晶シリコンと同程度の変換効率を得るには約１
けた薄い膜厚でよいこと、（２）アモルファスシリコン
太陽電池の製造に要した電力は結晶シリコン太陽電池よ
りも極めて少なく、エネルギ回収率が少ないこと、（３
）基板加熱が少なく且つアモルファスシリコノが基板と
反応することがなく、ステンレス板、ガラス板等のよう
に種々の基板を使用し得ること、（４）シラン（ＳｉＨ
４）からグロー放電分解にて直接基板上に膜を形成し得
るため連続生産が容易であること、等々 −の理由
によつで光起電力装置の構ＴＯ＆！素として注目を浴び
ている。このようにアモルファスシリコン半導体を使用
した太陽電池は、特に製造が比較的容易であり、また低
コスト化が可能であるため現在電卓や時計などの小電力
発生用の電源として広く使用されている。In recent years, amorphous semiconductors (e.g. amorphous semiconductors)
Oh 9.7 people 706 (1) □ Membrane Ah, Yu.
The absorption coefficient in the visible light range is larger than that of crystalline silicon, and it takes approximately 1 to obtain the same conversion efficiency as crystalline silicon.
(2) The power required to manufacture amorphous silicon solar cells is significantly lower than that of crystalline silicon solar cells, and the energy recovery rate is low; (3)
) There is little substrate heating and amorphous silicon does not react with the substrate, and various substrates such as stainless steel plates and glass plates can be used; (4) Silane (SiH)
4) It is possible to form a film directly on the substrate by glow discharge decomposition, so continuous production is easy, and so on. It is attracting attention as a matter of fact. As described above, solar cells using amorphous silicon semiconductors are relatively easy to manufacture and can be manufactured at low cost, so they are currently widely used as power sources for small power generation devices such as calculators and watches.
。 占 る゛ための−
しかしながら、アモルファスシリコン太陽電池の単位面
積当りの出力は極めて小さく、従って実用に供し得る大
電力を発生するには、太陽電池の表面積を大とすること
が不可欠であある。. However, the output per unit area of an amorphous silicon solar cell is extremely small, and therefore, in order to generate a large amount of power that can be put to practical use, it is essential to increase the surface area of the solar cell.
１折る欠点を解決するべく、一つの太陽電池素子の表面
積を大とすると、大面積化すればするほど素子の表面積
を構成する透明導電層（透明電極）のシート抵抗（ａ常
は５０〜１００Ω／口）が増大し、そのために電力損失
がますま大きくなり、変換効率がより一層低下してしま
うという難点があった。更に又、このような大きな太陽
電池を製造するのは技術的にはより困難となり１歩留ま
りが低下するという不利益がある。In order to solve the drawback of folding, the surface area of one solar cell element is increased. /port) increases, resulting in an even greater power loss and a further decrease in conversion efficiency. Furthermore, it is technically more difficult to manufacture such a large solar cell, resulting in a disadvantage in that the yield rate decreases.
に記透明電極のシート抵抗による電力の損失をなくすた
めに種々の提案がなされている０例えば、一枚の絶縁基
板上に複数個のセルを形成し、各セルをパターニングに
よって透明電極及び裏面電極を通じて隣接するセルとそ
れぞれ直列に接続し、−・枚の絶Ｉ＆基板から実用的な
高電圧を取り出すように構成した集積型アモルファス太
陽電池が開発されている（「日本の化学と挟術Ｊ’８３
／アモルファスのｆｊＳ７５頁参照、）シかル、一枚の
絶縁基板上に複数個のセルを形成するには、透明電極の
バターニング工程、アモルファスシリコンのｐｉｎの各
種の成膜工程及び裏面電極の法着り程にそれぞれマスキ
ングを行なうなど、工程が複雑となり、作業性が悪化す
る欠点がある。Various proposals have been made to eliminate power loss due to the sheet resistance of transparent electrodes. For example, by forming multiple cells on a single insulating substrate and patterning each cell, transparent electrodes and back electrodes can be formed. An integrated amorphous solar cell has been developed that is constructed so that a practical high voltage can be extracted from a single insulator and substrate by connecting each adjacent cell in series through the ``Japanese Chemistry and Technology J' 83
/Amorphous fjS (see page 75), in order to form multiple cells on one insulating substrate, a transparent electrode patterning process, various film formation processes for amorphous silicon pins, and a back electrode formation process are required. The disadvantage is that the process becomes complicated, such as masking each step of the process, and workability deteriorates.
又、特公昭５８−２１８２７号公報に開示さ・れた発明
のように、アモルファスシリコンのｐｉｎの各層を複数
のセルに対して連続して成膜し、［程の複雑化を若干軽
減したものもあるが、上記公報の第８８２６行〜３１行
に記載されているように、大面積化するとやはりシート
抵抗が増大し゛て電力損失が上昇し、変換効率が低下す
る欠点がある。In addition, as in the invention disclosed in Japanese Patent Publication No. 58-21827, each layer of amorphous silicon pins is successively deposited on a plurality of cells, thereby reducing the complexity slightly. However, as described in lines 8826 to 31 of the above-mentioned publication, increasing the area also has the disadvantage that the sheet resistance increases, power loss increases, and conversion efficiency decreases.
上記各従来技術は、ガラス基板−透明電極−アモルファ
スシリコンのｐｉｎ層−裏面電極の構造を有する太陽電
池であるが、金属基板−アモルファスシリコンのｐｉｎ
層又はｎｉｐ層−透明電極の構造を有する太陽電池も実
用化されている０例えば、特開昭５９−５５０１２号公
報、特開昭５９−１０４１８２号公報、特開昭５９−５
０５７６号公報には金属電極−アモルファスシリコノの
ｐｉｎ層−透明電極の構造を右する大ＦＩ！Ｊ電池が開
示されている。しかしながら、後者の構造、つまり金属
電極−アモルファスシリコンのｐｉｎＦ−透明電極の構
造を有する太陽電池の場合には透明電極が大気に触れる
のを防ＩＬするために何等かのパツゾヘーショ／を行な
う必要があり、このためパッシベーションの工程が多く
なり、作業性を悪化し、かつコスト高となるので好まし
くない。Each of the above conventional technologies is a solar cell having a structure of glass substrate-transparent electrode-amorphous silicon pin layer-back electrode, but metal substrate-amorphous silicon pin layer
Solar cells having a layer or nip layer-transparent electrode structure have also been put to practical use.
Publication No. 0576 describes the structure of a metal electrode, an amorphous silicon pin layer, and a transparent electrode. A J battery is disclosed. However, in the case of a solar cell having the latter structure, that is, a metal electrode-amorphous silicon pinF-transparent electrode structure, it is necessary to perform some kind of protection to prevent the transparent electrode from coming into contact with the atmosphere. , This increases the number of passivation steps, impairs workability, and increases costs, which is undesirable.
力、前者の構造、つまりガラス基板−透明電極一アモル
ファスシリコンのｐｉｎ層−裏面電極の構造を有する太
陽電池の場合にはガラス基板（または他の透明絶縁基板
）が耐候性材料であるため、透明電極にパッシベーショ
ンを施したのど回じ役［１を果たすので、構造上は前者
の方が好ましいが、前記いずれの構造太陽電池にしても
大面積化して実用的な高い電圧を取り出すことは前記し
た理由により困難である。In the case of solar cells with the former structure, that is, the structure of glass substrate - transparent electrode - pin layer of amorphous silicon - back electrode, the glass substrate (or other transparent insulating substrate) is a weather-resistant material, so it is transparent. The former is preferable from a structural point of view because the electrodes are passivated to serve as a throat-turning device [1], but as mentioned above, solar cells with either of the structures require a large area and a practical high voltage. Difficult for a number of reasons.
このように従来はアモルファスシリコ／半導体１
を使用した太陽電池を大面積化すると透明電極のシ
ート抵抗が増大して電力損失が大きくなり、変換効率が
著るしく低下するために実用に供し得ないという欠点が
あった。又、一枚の絶縁基板Ｆに複数個のセルを形成し
たのでは製造工程が複雑化し１作業性が悪くなり、更に
金属基板−アモルファスシリコンのｐｉｎまたはｎｉｐ
層−透明電極の構造にすると透明電極のパッシベーショ
ン工程が必要となり、作業性が悪くなるといった欠点が
あった。In this way, conventionally amorphous silicon/semiconductor 1
When a solar cell using the solar cell is made to have a large area, the sheet resistance of the transparent electrode increases, power loss increases, and the conversion efficiency significantly decreases, making it unsuitable for practical use. Furthermore, forming a plurality of cells on a single insulating substrate F complicates the manufacturing process and impairs workability.
The layer-transparent electrode structure requires a passivation process for the transparent electrode, which has the drawback of poor workability.
泣１の１Ｌ伯
従って、本発明の目的は、大面積化しても透明電極のシ
ート抵抗が殆んど増大しない５従ってアモルファス太陽
電池から実用的な高い電圧を取り出すことを可能にする
太陽電池用金属配線材！！透明電極を提供することであ
る。Accordingly, the object of the present invention is to provide a solar cell that allows a practical high voltage to be extracted from an amorphous solar cell, in which the sheet resistance of the transparent electrode hardly increases even when the area is increased. Metal wiring material! ! The object of the present invention is to provide a transparent electrode.
本発明の他の目的は、太陽電池の製造工程を簡単化する
ことができる大ＦｉＡｉｔ池用金属配線付き透明電極を
提供することである。Another object of the present invention is to provide a transparent electrode with metal wiring for large FiAit cells that can simplify the manufacturing process of solar cells.
本発明の更に他の目的は、時計の液晶ディスプレーとか
車の曇止めガラス窓用としても使用することができる金
属配線付き透明電極を提供することである・
Ｕ売 るため 二
と記目的は本発明によって達成される。要約すれば本発
明は、透明絶縁基板上に成膜される透明導電性薄膜に電
気的に接触した所定のパターンの金属配線を形成し１発
生した電流を透明４電性薄膜から近傍にある金属配線に
収集するようにした透明電極である。Still another object of the present invention is to provide a transparent electrode with metal wiring that can be used for liquid crystal displays of watches and anti-fog glass windows of cars. Achieved by invention. In summary, the present invention involves forming a predetermined pattern of metal wiring in electrical contact with a transparent conductive thin film formed on a transparent insulating substrate, and transmitting the generated current from the transparent four-conducting thin film to the nearby metal. It is a transparent electrode that collects on the wiring.
以ド 本発明の好ましい実施例について添付図面を参照
して詳細に説明する。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
第１図〜第４図は本発明に係る透明電極１０の実施例を
示す概略平面図及び断面図である。ガラス、プラスチッ
ク等の透明絶縁基板１３上に酸化スズ、酸化インジウム
、酸化チタン、酸化亜鉛のような物質にて形成された透
明導電性薄ＩＰ２１１が成ｎｒ２され、隨つ該′１ｆ１
明導電性薄膜１１には後で詳しく説明するような態様で
所定パターンの金属配線１２が’ｉｔ気的に接触した状
態で施される。1 to 4 are a schematic plan view and a cross-sectional view showing an embodiment of a transparent electrode 10 according to the present invention. A transparent conductive thin IP 211 made of a substance such as tin oxide, indium oxide, titanium oxide, or zinc oxide is formed on a transparent insulating substrate 13 such as glass or plastic.
A predetermined pattern of metal wiring 12 is applied to the bright conductive thin film 11 in a manner that will be described in detail later, in a state in which it is in close contact with the metal wiring 12 .
第２図に示す透明電極１０の実施例では、ガラス、プラ
スチック等の透明絶縁基板１３上に所定のパターンに金
属配線１２を形成し、その上部に全面にわたって透明導
電性薄膜１１を形成し 金属配線１２と薄膜１１とを電
気的に接触させた構成とされる。In the embodiment of the transparent electrode 10 shown in FIG. 2, a metal wiring 12 is formed in a predetermined pattern on a transparent insulating substrate 13 made of glass, plastic, etc., and a transparent conductive thin film 11 is formed over the entire surface of the metal wiring. 12 and the thin film 11 are in electrical contact with each other.
又、第３図に示す透明Ｔｔ極１０の実施例では。Also, in the embodiment of the transparent Tt pole 10 shown in FIG.
透明絶縁基板１３上に全面にわたって透明導電性ｌ膜１
１を形成し、その上部に所定のパターンに金属配線１２
を形成し、薄ＩＦＪ１１と配線１２とを電気的に接触さ
せた構成とされる。A transparent conductive l film 1 is formed over the entire surface on a transparent insulating substrate 13.
1, and metal wiring 12 is formed on top of it in a predetermined pattern.
The thin IFJ 11 and the wiring 12 are electrically connected to each other.
更に、第４図に示す透明電極１０の゛実施例では、透明
絶縁基板１３上に全面にわたって酸化スズのような金属
酸化物よりなる透明導電性Ｐ１膜１４七形成し、次に、
このＰｙ膜１１のうちの金属配線１２を施こす所定のパ
ターンの部分のみを還元させ、金属とすることにより金
属配線１２を形成し薄ＩＰ２１１と電気的に接触させた
構成とされる。Furthermore, in the embodiment of the transparent electrode 10 shown in FIG. 4, a transparent conductive P1 film 14 made of a metal oxide such as tin oxide is formed over the entire surface of the transparent insulating substrate 13, and then,
Only a predetermined patterned portion of the Py film 11 on which the metal wiring 12 is to be applied is reduced and made into metal, thereby forming the metal wiring 12 and making electrical contact with the thin IP 211.
前記還元法としては、電＃還元を用いる方法とか、水素
気流中、で熱分解還元を用いる方法が好ましい。The reduction method is preferably a method using electrolyte reduction or a method using thermal decomposition reduction in a hydrogen stream.
この第４図に示す透明電極１０の場合には電極表面に金
属配線を形成したことによる凹凸が殆んとなく、アモル
ファスシリコンのｐｉｎｆｉを成膜した際に表面の凹凸
に起因するアモルファスシリコンのピンホール等が発生
せず１歩留りが低下する恐れがないという前記他の２つ
の構造に勝る利点がある。なお、第４図の透明電極にお
いては。In the case of the transparent electrode 10 shown in FIG. 4, there is almost no unevenness due to the formation of metal wiring on the electrode surface, and when amorphous silicon pinfi is formed, the amorphous silicon pin due to the unevenness on the surface is almost completely absent. This structure has an advantage over the other two structures in that no holes are generated and there is no risk of a decrease in yield. In addition, in the transparent electrode of FIG.
透明導電性薄Ｈ１ｌとしてＩ ｎｚ Ｏ３をした場合に
は金属配ｌ１１２は当然にインジウムになる。インジウ
ムはグロー放電中１等プラズマ雰囲気ではシリコン等と
反応し、好ましくないために、Ｉｎ１０３を使用し金属
配線１２を形成した場合には還元により形成されたイン
ジウムの金属配線１２を別種の金属１例えばステンレス
、クロム又はニッケル等で被塑する。斯る別種の金属は
、蒸着又は電解メッキによって施すことができ、又所望
に応じて金属配、線部分を還元しながら電解メッキを施
すこともでさる。If I nz O3 is used as the transparent conductive thin layer H11, the metal layer 112 will naturally be indium. Indium reacts with silicon, etc. in a primary plasma atmosphere during glow discharge, which is undesirable. Therefore, when In103 is used to form the metal wiring 12, the indium metal wiring 12 formed by reduction is replaced with another metal such as Plasticized with stainless steel, chromium, nickel, etc. Such different metals can be applied by vapor deposition or electrolytic plating, and if desired, electrolytic plating can be applied while reducing the metal wiring and wire portions.
＆１立差］
）」二記したように、本発明に゛おいては、透明絶縁ヰ
基板−ヒに１＆校された透明導電性ｔＩＩ膜に金属配線
が所定のパターンに施されているので、この透明電極上
にアモルファスシリコンのｐｉ ｎ層を形成し、更にそ
の上に裏面電極を形成してアモルファス太陽電池を製造
した際に１発生電流は透明導電性薄膜を通って最も近傍
にある金属配線に収集される。このため、太陽電池を大
面植化しても透明電極のシート抵抗は殆んど増大せず、
従って電力損失の増大が殆んどなく、変換効率も殆んど
低下しないというすぐれた利点がある。又、透明電極上
に全面にわたってアモルファスシリコンの２１０層が形
成できるから、マスキング工程数を減らすことができ、
作業性が向上する利点もある。特に、第４図に示す構造
の透明電極にあっては、電極表面に凹凸が殆んどないた
め、その上部に成膜されるアモルファスシリコンのｐｔ
ｎＲにピンホール等の欠陥が発生せず、従って歩留りが
大巾に向上するという利点もある。As mentioned above, in the present invention, metal wiring is provided in a predetermined pattern on a transparent conductive TII film coated on a transparent insulating substrate. When an amorphous solar cell is manufactured by forming an amorphous silicon PIN layer on this transparent electrode and further forming a back electrode on top of it, the generated current flows through the transparent conductive thin film to the nearest metal wiring. will be collected in For this reason, even if solar cells are planted over a large area, the sheet resistance of the transparent electrode will hardly increase.
Therefore, there is an excellent advantage that there is almost no increase in power loss and almost no decrease in conversion efficiency. Furthermore, since 210 layers of amorphous silicon can be formed over the entire surface of the transparent electrode, the number of masking steps can be reduced.
There is also the advantage of improved workability. In particular, in the case of the transparent electrode having the structure shown in FIG.
There is also the advantage that defects such as pinholes do not occur in nR, and therefore the yield is greatly improved.
１崖ｊ
実施例１
縦５ｃｍ、横５ｃｍ、厚さ１．１ｍｍの正方形のガラス
よりなる透明絶縁基板ヒに全面にわたってＳ ｎ ＯＺ
をＸ、着し、厚さ２０００スの透明導電性ｆｉ！膜を形
成した。この薄膜上に、第５図に示すように１ｃｍの間
隔の格子状にステンレスを１０’Ｏス１次にアルミニウ
ムをＩｇｍ、さらにステンレスを５００大の厚さに順次
に蒸着し。Example 1 S n OZ was applied over the entire surface of a transparent insulating substrate made of square glass measuring 5 cm long, 5 cm wide, and 1.1 mm thick.
X, transparent conductive fi! with a thickness of 2000 mm. A film was formed. On this thin film, as shown in FIG. 5, stainless steel was sequentially deposited to a thickness of 10'O, first aluminum to Igm, and then stainless steel to a thickness of 500.
１ｃｍの間隔の格子状の金属配線１２を形成し。A lattice-shaped metal wiring 12 with an interval of 1 cm is formed.
第３図に示す構成の透明電極１０を形成した。金属配線
の幅は０．５ｍｍであった。この透明電極ｈ ニ’ｋ
ＢにわたってアモルファスシリコンのＰＩ３層を順次に
厚さ１００ス、５０００ス、２００＾にそれぞれ成膜し
、ｎ層上にアルミニウムをｌルｍのＪγさに薄着して裏
面電極を形成し、太陽電池を製造した。この本発明の透
明電極を使用した太陽電池と同じ大きさ、仕様のただし
金属配線のない従来の太陽電池とを照射強度 １００ｍ
Ｗ／ｃｒｎ’のＡＭ−１光で照射してその電流−電圧特
性を測定したところ、第６図に示す結果が得られた、第
６因においてＡは本発明によるもの、Ｂは従来のものの
特性を示し、これより明らかに本発明の透明′ｒｒＬ極
を使用した太陽電池は電流−電圧特性が一段と向ヒして
いることが分る。A transparent electrode 10 having the configuration shown in FIG. 3 was formed. The width of the metal wiring was 0.5 mm. This transparent electrode h ni'k
Three PI layers of amorphous silicon are sequentially formed over B to a thickness of 100, 5000, and 200, respectively, and aluminum is thinly deposited on the n layer to a Jγ of 1 lum to form a back electrode. was manufactured. A solar cell using the transparent electrode of the present invention and a conventional solar cell having the same size and specifications but without metal wiring had an irradiation intensity of 100 m.
When irradiated with AM-1 light of W/crn' and measured its current-voltage characteristics, the results shown in Figure 6 were obtained. It can be clearly seen that the solar cell using the transparent 'rrL electrode of the present invention has much improved current-voltage characteristics.
実施例２
実施例１と同じ条件及び材料で、ただしガラス絶縁基板
上にまず１ｃｍｆ１１隔の格子状に金属配線を形成し、
次に全面にＳ ｎ Ｏｚの透明導電性薄膜を形成した第
２図に示す構成の透明型第１０を形成し、この透明電極
を使用して実施例１と同じ太陽電池を製造し、ＡＭ−１
光の照射下で電流−電圧特性を測定したところ、実施例
１と同様の特性が得られた。Example 2 The same conditions and materials as in Example 1 were used, except that metal wiring was first formed in a lattice shape with 1 cm f 11 intervals on a glass insulating substrate,
Next, a transparent conductive thin film of SnOz was formed on the entire surface of a transparent type 10 having the structure shown in FIG. 2, and this transparent electrode was used to manufacture the same solar cell as in Example 1. 1
When the current-voltage characteristics were measured under light irradiation, the same characteristics as in Example 1 were obtained.
実施例３
実施例１と同じ条件及び材料で、ただしガラス基板上に
７に看したＳ ｎ Ｏｚ Ｐ＋のうち金属配線となる格
子状の部分を残して他の部分をマスキングし電解；元法
によりマスキングを行なわない部分を還元してＳｎとし
、格子状の金属配線を形成した第４図に示す構成の透明
電極を形成し、この透明１！極を使用して実施例１と同
じ大ＦＪＳ電池を作製した。この太陽電池も実施例１と
同様の電流−電正特性を示した。Example 3 Electrolysis was carried out under the same conditions and materials as in Example 1, except that the lattice-shaped portion of the S n Oz P+ shown in 7 was left on the glass substrate and the other portions were masked and electrolyzed according to the original method. The portions that are not masked are reduced to Sn to form a transparent electrode having the structure shown in FIG. 4, in which a lattice-shaped metal wiring is formed, and this transparent 1! A large FJS battery similar to Example 1 was made using the electrodes. This solar cell also showed the same current-voltage characteristics as Example 1.
実施例４
実施例３と同じく電解還元法により金属配線を形成しさ
らに金属配線のＳｎに電解クロムメッキを行なった透明
電極を形成し、この透明電極を使用して実施例１と同じ
太陽電池を作製した。この太陽電池も実施例１と同様の
電流−電圧特性を示した。Example 4 Metal wiring was formed using the electrolytic reduction method as in Example 3, and a transparent electrode was formed by electrolytic chromium plating on the Sn of the metal wiring, and the same solar cell as in Example 1 was produced using this transparent electrode. Created. This solar cell also showed the same current-voltage characteristics as Example 1.
尚、金属配線の輻及びパターン（配線形状）は大ＷＡＴ
Ｌ池の動作時の電流値及び透明導電性薄膜のシート抵抗
によって最適な輻及びパターンが選定され、限定される
ものではない、従って、必要に応じて種々の変形及び変
更がなし得る。In addition, the convergence and pattern (wiring shape) of the metal wiring are large WAT.
The optimum radius and pattern are selected depending on the current value during operation of the L cell and the sheet resistance of the transparent conductive thin film, and are not limited to this. Therefore, various modifications and changes can be made as necessary.
上述のように１本発明による金属配線付き透明電極を使
用した太陽電池は大面積化しても電力損失の増大は殆ん
どなく、従って実用的な高い電圧を取り出すことができ
る太陽電池を可能にし、またマスキング工程数が減少す
るので作業性が向上ベ する等の顕著な利点があ
る。As mentioned above, the solar cell using the transparent electrode with metal wiring according to the present invention has almost no increase in power loss even when the area is increased, and therefore it enables a solar cell that can extract a practical high voltage. In addition, there are significant advantages such as improved workability due to the reduction in the number of masking steps.
第１図は１本発明による金属配線付き透明電極の一実施
例を示す概略平面図である。
第２図から第４図は、第１図の透明電極の３つの製造方
法をそれぞれ例示する概略断面図である第５図は、本発
明による金属配線付き透明電極の他の実施例を示す概略
平面図である。
第６図は、本発明の透明電極を使用した太陽電池と従来
の太陽電池の電流−電圧特性図である。
ｌＯ：透明電極
１１：透明導電性薄膜
１２＝金属配線
１３：透明絶縁基板
（ＶＬＬＩ）￥４FIG. 1 is a schematic plan view showing an embodiment of a transparent electrode with metal wiring according to the present invention. 2 to 4 are schematic cross-sectional views illustrating three methods of manufacturing the transparent electrode shown in FIG. 1. FIG. 5 is a schematic sectional view showing another embodiment of the transparent electrode with metal wiring according to the present invention. FIG. FIG. 6 is a current-voltage characteristic diagram of a solar cell using the transparent electrode of the present invention and a conventional solar cell. lO: Transparent electrode 11: Transparent conductive thin film 12 = Metal wiring 13: Transparent insulating substrate (VLLI) ¥4
Claims (1)
的に接触した所定のパターンの金属配線を形成したこと
を特徴とする金属配線付き透明電極。 ２）透明絶縁基板はガラス又はプラスチックであり、透
明導電性薄膜は酸化スズ、酸化インジウム、酸化チタン
又は酸化亜鉛である特許請求の範囲第１項記載の透明電
極。 ３）金属配線は透明導電性薄膜上に形成される特許請求
の範囲第１項又は第２項記載の透明電極。 ４）金属配線は透明絶縁基板上に形成され、その上部に
透明導電性薄膜が成膜される特許請求の範囲第１項又は
第２項記載の透明電極。 ５）金属配線は、透明絶縁基板上に成膜された金属酸化
物よりなる透明導電性薄膜の一部分を還元することによ
つて形成される特許請求の範囲第１項又は第２項記載の
透明電極。 ６）金属配線は、金属酸化物よりなる透明導電性薄膜の
一部分を還元して金属とし、該金属上に別種の金属を蒸
着することによつて形成される特許請求の範囲第５項記
載の透明電極。 ７）金属酸化物よりなる透明導電性薄膜の還元は電解還
元法によつて行なわれる特許請求の範囲第５項又は第６
項記載の透明電極。 ８）金属酸化物よりなる透明導電性薄膜の還元は水素気
流中での熱分解還元法によつて行なわれる特許請求の範
囲第５項又は第６項記載の透明電極。 ９）金属配線が金属酸化物よりなる透明導電性薄膜の一
部分を還元して金属とし、該金属に電解メッキにより別
種の金属を被着することによつて形成される特許請求の
範囲第５項記載の透明電極。 １０）金属配線が金属酸化物よりなる透明導電性薄膜の
一部分を還元しながら同時に電解メッキを施すことによ
つて形成される特許請求の範囲第５項記載の透明電極。[Scope of Claims] 1) A transparent electrode with metal wiring, characterized in that metal wiring in a predetermined pattern is formed in electrical contact with a transparent conductive thin film formed on a transparent insulating substrate. 2) The transparent electrode according to claim 1, wherein the transparent insulating substrate is glass or plastic, and the transparent conductive thin film is tin oxide, indium oxide, titanium oxide, or zinc oxide. 3) The transparent electrode according to claim 1 or 2, wherein the metal wiring is formed on a transparent conductive thin film. 4) The transparent electrode according to claim 1 or 2, wherein the metal wiring is formed on a transparent insulating substrate, and a transparent conductive thin film is formed on the metal wiring. 5) The metal wiring is formed by reducing a portion of a transparent conductive thin film made of a metal oxide formed on a transparent insulating substrate. electrode. 6) The metal wiring is formed by reducing a portion of a transparent conductive thin film made of a metal oxide to a metal, and depositing another type of metal on the metal. Transparent electrode. 7) The reduction of the transparent conductive thin film made of metal oxide is carried out by an electrolytic reduction method.
Transparent electrode as described in section. 8) The transparent electrode according to claim 5 or 6, wherein the reduction of the transparent conductive thin film made of a metal oxide is carried out by a thermal decomposition reduction method in a hydrogen stream. 9) Claim 5, wherein the metal wiring is formed by reducing a portion of a transparent conductive thin film made of a metal oxide to a metal, and depositing a different type of metal on the metal by electrolytic plating. The transparent electrode described. 10) The transparent electrode according to claim 5, wherein the metal wiring is formed by electrolytically plating a portion of a transparent conductive thin film made of a metal oxide while simultaneously reducing it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59238848A JPS61116883A (en) | 1984-11-13 | 1984-11-13 | Transparent electrode with metal wiring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59238848A JPS61116883A (en) | 1984-11-13 | 1984-11-13 | Transparent electrode with metal wiring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61116883A true JPS61116883A (en) | 1986-06-04 |
Family
ID=17036163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59238848A Pending JPS61116883A (en) | 1984-11-13 | 1984-11-13 | Transparent electrode with metal wiring |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61116883A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01140676A (en) * | 1987-11-26 | 1989-06-01 | Nippon Denso Co Ltd | Semi-transparent solar cell |
| WO2003081609A1 (en) * | 2002-03-26 | 2003-10-02 | Fujikura Ltd. | Conductive glass and photoelectric conversion device using same |
| JP2005044544A (en) * | 2003-07-23 | 2005-02-17 | Fujikura Ltd | Substrate for transparent electrode, photoelectric conversion device, and dye-sensitized solar cell |
| AU2001249204B2 (en) * | 2000-11-17 | 2006-10-12 | 3M Innovative Properties Company | Color tailorable pigmented optical bodies with surface metalization |
| JP2008117782A (en) * | 2002-03-26 | 2008-05-22 | Fujikura Ltd | Conductive glass and photoelectric conversion element using this |
| JP2009117742A (en) * | 2007-11-09 | 2009-05-28 | Bridgestone Corp | Electrode film for solar cell, method for manufacturing solar cell using same, and solar cell |
| JP2009117731A (en) * | 2007-11-09 | 2009-05-28 | Bridgestone Corp | Method for manufacturing solar cell |
| KR101001548B1 (en) | 2004-06-29 | 2010-12-17 | 삼성에스디아이 주식회사 | Dye-sensitive solar cell using photoelectric transformation electrode |
| US8629346B2 (en) | 2002-10-03 | 2014-01-14 | Fujikura Ltd. | Electrode substrate, photoelectric conversion element, conductive glass substrate and production method thereof, and pigment sensitizing solar cell |
| CN111129189A (en) * | 2019-12-11 | 2020-05-08 | 中国电子科技集团公司第十八研究所 | ITO glass cover plate for space and preparation method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57173982A (en) * | 1981-04-21 | 1982-10-26 | Fuji Electric Corp Res & Dev Ltd | Solar battery module |
-
1984
- 1984-11-13 JP JP59238848A patent/JPS61116883A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57173982A (en) * | 1981-04-21 | 1982-10-26 | Fuji Electric Corp Res & Dev Ltd | Solar battery module |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01140676A (en) * | 1987-11-26 | 1989-06-01 | Nippon Denso Co Ltd | Semi-transparent solar cell |
| AU2001249204B2 (en) * | 2000-11-17 | 2006-10-12 | 3M Innovative Properties Company | Color tailorable pigmented optical bodies with surface metalization |
| JP2008117782A (en) * | 2002-03-26 | 2008-05-22 | Fujikura Ltd | Conductive glass and photoelectric conversion element using this |
| AU2003236063B2 (en) * | 2002-03-26 | 2006-04-06 | Fujikura Ltd. | Conductive glass and photoelectric conversion device using same |
| CN1326158C (en) * | 2002-03-26 | 2007-07-11 | 株式会社藤仓 | Electrically conductive glass and photoelectric conversion element using the same |
| WO2003081609A1 (en) * | 2002-03-26 | 2003-10-02 | Fujikura Ltd. | Conductive glass and photoelectric conversion device using same |
| US8546683B2 (en) | 2002-03-26 | 2013-10-01 | Fujikura Ltd. | Electrically conductive glass and photoelectric conversion element using the same |
| US8629346B2 (en) | 2002-10-03 | 2014-01-14 | Fujikura Ltd. | Electrode substrate, photoelectric conversion element, conductive glass substrate and production method thereof, and pigment sensitizing solar cell |
| JP2005044544A (en) * | 2003-07-23 | 2005-02-17 | Fujikura Ltd | Substrate for transparent electrode, photoelectric conversion device, and dye-sensitized solar cell |
| JP4578786B2 (en) * | 2003-07-23 | 2010-11-10 | 株式会社フジクラ | Method for producing dye-sensitized solar cell |
| KR101001548B1 (en) | 2004-06-29 | 2010-12-17 | 삼성에스디아이 주식회사 | Dye-sensitive solar cell using photoelectric transformation electrode |
| JP2009117742A (en) * | 2007-11-09 | 2009-05-28 | Bridgestone Corp | Electrode film for solar cell, method for manufacturing solar cell using same, and solar cell |
| JP2009117731A (en) * | 2007-11-09 | 2009-05-28 | Bridgestone Corp | Method for manufacturing solar cell |
| CN111129189A (en) * | 2019-12-11 | 2020-05-08 | 中国电子科技集团公司第十八研究所 | ITO glass cover plate for space and preparation method |
| CN111129189B (en) * | 2019-12-11 | 2022-04-12 | 中国电子科技集团公司第十八研究所 | ITO glass cover plate for space and preparation method |
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