JPS58196060A - Thin film semiconductor device - Google Patents
Thin film semiconductor deviceInfo
- Publication number
- JPS58196060A JPS58196060A JP57078851A JP7885182A JPS58196060A JP S58196060 A JPS58196060 A JP S58196060A JP 57078851 A JP57078851 A JP 57078851A JP 7885182 A JP7885182 A JP 7885182A JP S58196060 A JPS58196060 A JP S58196060A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- electrode
- film semiconductor
- semiconductor layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 239000010408 film Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims 7
- 239000002356 single layer Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000012212 insulator Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 11
- 239000010935 stainless steel Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
- H01L27/016—Thin-film circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
【発明の詳細な説明】
本発明は薄膜太陽電池や薄膜半導体デバイスに関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to thin film solar cells and thin film semiconductor devices.
従来の単結晶を用いた半導体デバイスに対して、近年は
アモルファスシリコン（以下ａ−８ｉと略記）をはじめ
とする非晶質、微結晶質（マイクロクリスタル）または
多結晶質を用いた薄膜半導体デぶイスの開発が活発に行
われている。このような非晶質、微結晶質及び多結晶の
半導体デバイスは、膜質の抵抗率が大きいため膜の水平
方向への電流の広がりが小さいこと、及び電磁的または
熱的な手段を利用して結晶化すれば抵抗率が小さくなる
等の特性をもつことが知られている。本発明はこれらの
特性を活用して、新規な電気的端子を備えた非晶質、微
結晶質又は多結晶の半導体デバイスを提供するものであ
る。In contrast to conventional semiconductor devices using single crystals, in recent years thin film semiconductor devices using amorphous, microcrystalline, or polycrystalline materials such as amorphous silicon (hereinafter abbreviated as A-8I) have been developed. The development of bus chairs is being actively carried out. Such amorphous, microcrystalline, and polycrystalline semiconductor devices are characterized by the fact that the resistivity of the film is high, so that the spread of current in the horizontal direction of the film is small, and that it is possible to use electromagnetic or thermal means. It is known that crystallization has characteristics such as a decrease in resistivity. The present invention takes advantage of these properties to provide amorphous, microcrystalline, or polycrystalline semiconductor devices with novel electrical terminals.
まず以下に従来から用いられている薄膜半導体デバイス
としてａ−８ｉ太陽電池を例として説明する。First, an explanation will be given below using an A-8I solar cell as an example of a conventionally used thin film semiconductor device.
第１図に従来のステンレス（導体）基板１上に形成され
たｐ−１−ｎ接合アモルファス太陽電池２の構造断面図
を示す。第１図（ａ）は、透明導電膜３で被われた受光
面側の電極４に対して他方の電気的端子５を下部即ち導
体基板１側に設けた場合であり、第１図（ｂ）は物理的
または化学的な手段で基板１上の一部の半導体薄膜（こ
の場合アモルファスシリコン接合層）を除去して他方の
電極６を基板１に対して同じ上面（受光面）側に設けた
ものである。第１図（ａ）の構造では電極がａ−８ｉ層
２の夫々の面に形成されることになり、半導体デ”Ｍを
設置する場所や配線に著しく制限を受けるという欠点が
あった。また第１図（ｂ）の構造ではａ−８ｔをエツチ
ング除去するか、或いは予めａ−８ｉの積層領域を制限
しなければならず、製造工程が頻雑になったシ、受光面
積が著しく減縮されるという欠点があった。FIG. 1 shows a structural sectional view of a p-1-n junction amorphous solar cell 2 formed on a conventional stainless steel (conductor) substrate 1. FIG. 1(a) shows a case where the other electrical terminal 5 is provided on the lower part of the electrode 4 on the light-receiving surface side covered with the transparent conductive film 3, that is, on the conductor substrate 1 side. ) is a process in which a part of the semiconductor thin film (in this case, the amorphous silicon bonding layer) on the substrate 1 is removed by physical or chemical means, and the other electrode 6 is provided on the same upper surface (light-receiving surface) side with respect to the substrate 1. It is something that In the structure shown in FIG. 1(a), electrodes are formed on each surface of the a-8i layer 2, which has the disadvantage that the location and wiring for installing the semiconductor device are severely restricted. In the structure shown in FIG. 1(b), it is necessary to remove a-8t by etching or limit the stacked area of a-8i in advance, which makes the manufacturing process more frequent and the light-receiving area is significantly reduced. There was a drawback that
本発明は上記従来装置の欠点を除去し、他の機器への接
続が容易であると共に、製造が容易な電極構造を備えた
薄膜半導体装置に関する。The present invention relates to a thin film semiconductor device having an electrode structure that eliminates the drawbacks of the conventional devices, is easy to connect to other equipment, and is easy to manufacture.
第２図は本発明による一実施例を示す側面図で、ステン
レス基板又は絶縁体上に導電層を被着した導電性基体１
１上に太陽電池として機能し得るａ−８ｉ１２が積層さ
れている。該ａ−８ｉ１２は、ｐ−ｎ層 ｐ−１−ｎ層
Ｍ−Ｉ−８，ショットキー等の接合を備え、これらの
接合が単数又は複数に積層されて、入射光を受けること
により光起電力を発生する。上記ａ−８ｉ１２の表面に
は出力を取り出すための２つの電極、透明電極膜１３及
び１５が形成されている。ここで透明電極膜１３はａ−
８ｉ１２の受光面の電極として設けられ、従って受光面
のほぼ大部分を被って形成されている。FIG. 2 is a side view showing an embodiment of the present invention, in which a conductive substrate 1 is formed by depositing a conductive layer on a stainless steel substrate or an insulator.
A-8i12, which can function as a solar cell, is laminated on top of A-8I12. The a-8i12 is equipped with junctions such as p-n layer, p-1-n layer, M-I-8, Schottky, etc., and these junctions are laminated in single or plural layers and photoactivated by receiving incident light. Generate electricity. Two electrodes, transparent electrode films 13 and 15, for extracting output are formed on the surface of the a-8i12. Here, the transparent electrode film 13 is a-
It is provided as an electrode on the light-receiving surface of 8i12, and is therefore formed to cover almost a large part of the light-receiving surface.
一方透明電極膜１５はａ−８ｉ１２の相対する裏側から
出力を取り出すための電極で、上記透明電極膜１３とは
離れて形成されている。透明電極膜１３及び１５の夫々
には銀ペースト等による端子１４．１６が形成されてい
る。On the other hand, the transparent electrode film 15 is an electrode for extracting output from the opposite back side of the a-8i12, and is formed apart from the transparent electrode film 13. Terminals 14 and 16 made of silver paste or the like are formed on each of the transparent electrode films 13 and 15.
上記電極端子１６の側については、透明導電膜１５と基
板１１とで挾まれた薄膜半導体層を電気的、電磁的又は
熱的な手段、で低抵抗化して裏側の出力を導出する。On the side of the electrode terminal 16, the resistance of the thin film semiconductor layer sandwiched between the transparent conductive film 15 and the substrate 11 is reduced by electrical, electromagnetic or thermal means, and the output from the back side is derived.
次に上記第２図に示した薄膜半導体装置の製造工程を挙
げて実施例をより詳細に説明する。第３図（ａ）〜（ｅ
）は各工程における断面図で、ステンレス。Next, an example will be described in more detail by citing the manufacturing process of the thin film semiconductor device shown in FIG. 2 above. Figure 3 (a) to (e)
) is a cross-sectional view of each process, stainless steel.
鉄、銅、銀、アルミニウム、アルミ合金、ニッケル、鉄
−ニッケル又はこれらの合金等の金属からなる導電性基
体１１１Ｉ′ｉ洗浄された後、第３図（ａ）に示すよう
に一方の表面にプラズマＣＶＤ法によりアモルファス半
導体層１２が形成される０該アモルファス半導体層１２
は光電特性をもたせるため、ｐ−１−ｎをシングルセル
又はタンデムセルに積層シサれている。ａ−８ｉの場合
、ｐ層はＳｉＨ４ガスにＢｚＨｓガスを少量添加したも
のを原料ガスとして、ｉ層はＳｉＨ４ガスや５ｉＨａ＋
ＳｉＦ４ガスを原料ガスとして、またｎ層はＳｉＨ，ガ
スやＳｉＨ。After being cleaned, a conductive substrate 111I′i made of a metal such as iron, copper, silver, aluminum, aluminum alloy, nickel, iron-nickel or an alloy thereof is coated on one surface as shown in FIG. 3(a). The amorphous semiconductor layer 12 is formed by a plasma CVD method.
In order to provide photoelectric properties, p-1-n are laminated into a single cell or a tandem cell. In the case of a-8i, the raw material gas for the p layer is SiH4 gas with a small amount of BzHs added, and the raw material gas for the i layer is SiH4 gas or 5iHa+.
SiF4 gas is used as the raw material gas, and the n-layer is SiH gas or SiH.
＋ＳｉＦ、ＳｉＨ４ガス ｓガスを少量添加したものを
原料ガスとして、それぞれプラズマＣＶＤ法により成長
させたものである０各層の膜厚は光起電効果を最大とな
らしめるよう設計されるが、その−例を示すと、ｐ−１
−ｎのシングルセルからなる場たｐ−１−ｎのタンデム
セルからなる場合ｐ、〜上記アモルファス半導体層１２
の表面全面に透明導電膜Ａを形成する０透明導電膜Ａは
ＩＴＯ（Ｉ ｎ２０３− Ｓｎｏｗ ）や５ｎ０２：
Ｓｂを電子ビーム蒸着法やスパッター法によシロ００〜
１００ＯＡ厚形成したものである。次に透明導電膜Ａを
透明電極１３と透明電極１５に分割するため化学的な手
法により第３図（ｅ）に示すようにパターニングする０
更に透虱電極１３及び１５の一部に銀ペーストをスクリ
ーン印刷し夫々の電極端子１４．１６とする。+SiF, SiH4 gas, SiH4 gas Added a small amount of s gas as the raw material gas, each grown by plasma CVD method.0 The film thickness of each layer is designed to maximize the photovoltaic effect, but - For example, p-1
-n single cells, p-1-n tandem cells p, ~ the amorphous semiconductor layer 12
The transparent conductive film A that forms the transparent conductive film A on the entire surface of is made of ITO (In203-Snow) or 5n02:
Sb is deposited by electron beam evaporation method or sputtering method.
It is formed to a thickness of 100 OA. Next, in order to divide the transparent conductive film A into transparent electrodes 13 and 15, patterning is performed using a chemical method as shown in FIG. 3(e).
Further, silver paste is screen printed on a portion of transparent electrodes 13 and 15 to form electrode terminals 14 and 16, respectively.
半導体層表面は電極端子１４．１６の上面を除いて第３
図（ｄ）のように透明樹脂１７でオーバーコートし、最
後に導電性基体１１と一方の電極１６との間に電磁的エ
ネルギーを加えてｐ−１−ｎのアモルファス半導体接合
層を破壊して低抵抗領域１８を形成する。低抵抗領域１
８の抵抗値Ｒ８は数十Ω以下であシ、アモルファス太陽
電池を低照度（１００ルツクス〜５０００ルツクス）で
使用する場合、この直列抵抗Ｒｓの大きさは、アモルフ
ァス太陽電池の特性を減少させない。第４図は上記工程
を経て作製された民生用アモルファス太陽電池の斜視図
である。The surface of the semiconductor layer is the third layer except for the top surface of the electrode terminals 14 and 16.
As shown in Figure (d), the amorphous semiconductor bonding layer of p-1-n is overcoated with a transparent resin 17, and finally electromagnetic energy is applied between the conductive substrate 11 and one electrode 16 to destroy the p-1-n amorphous semiconductor bonding layer. A low resistance region 18 is formed. Low resistance region 1
The resistance value R8 of 8 is several tens of ohms or less, and when the amorphous solar cell is used at low illuminance (100 lux to 5000 lux), the magnitude of this series resistance Rs does not reduce the characteristics of the amorphous solar cell. FIG. 4 is a perspective view of a consumer-use amorphous solar cell manufactured through the above steps.
次に上記薄膜半導体装置を作製する過程において、電極
端子１６と導電性基体１１とで挾まれた半導体領域１８
を低抵抗化するための電気パルスによる接合破壊方法を
説明する。Next, in the process of manufacturing the thin film semiconductor device, the semiconductor region 18 sandwiched between the electrode terminal 16 and the conductive substrate 11
A method of breaking the junction using electric pulses to lower the resistance will be explained.
タンデム型アモルファス太陽電池は、ステンレス／ ｐ
＋−ｉ＋ ｎ、／ ｐｚ−１ｇ−ｎ２／ Ｉ Ｔｏ構
造からな覧各層の膜厚ばＰｔ＝７０ＯＡ・ ｉ ＋ ＝
４００ＯＡ。Tandem type amorphous solar cells are made of stainless steel/p
+-i+ n, / pz-1g-n2/ I To structure, the film thickness of each layer is Pt = 70OA・i + =
400OA.
ｎ２＝１５ＯＡ、ｐ、＝ｔｓｏＡ、１ｚ＝６００Ａ、
ｎ２＝１５ＯＡ、ＩＴＯ＝７０ＯＡに作製されている場
合を挙げる。上記太陽電池に、この場合はステンレス基
板側をアースにｎ２側電極１６を正電圧となる逆バイア
スをパルス状で印加する。第５図（ａ）に示すような印
加電圧＋５０ｖ、パルス幅４ｍ５ｅｃのパルスを１回作
用させると領域１８の直列抵抗Ｒｓは第６図Ｂに示すよ
うな分布を示し、また第５図（ｂ）のように逆パルス−
正パルスを対として印加すると第６図Ｃのように抵抗値
は減少し、更に上記第５図（ｂ）のパルスを２回作用さ
せると抵抗値は第６図りのように一層低い値に分布し、
２００以下を示した。抵抗値をゼロにすることはできな
いが、電磁的な手段で１〜１０００以下に低下させるこ
とができる。n2=15OA, p,=tsoA, 1z=600A,
A case where n2=15OA and ITO=70OA are fabricated will be described. In this case, a pulsed reverse bias is applied to the solar cell, with the stainless steel substrate side being grounded and the n2 side electrode 16 being a positive voltage. When a pulse with an applied voltage of +50 V and a pulse width of 4 m5ec is applied once as shown in FIG. 5(a), the series resistance Rs in the region 18 shows a distribution as shown in FIG. 6B, and ) as inverse pulse −
When positive pulses are applied as a pair, the resistance value decreases as shown in Fig. 6C, and when the pulse shown in Fig. 5(b) above is applied twice, the resistance value is distributed to an even lower value as shown in Fig. 6. death,
It showed 200 or less. Although the resistance value cannot be reduced to zero, it can be reduced to 1 to 1000 or less by electromagnetic means.
処で領域１８における抵抗の値が太陽電池の特性に及ぼ
す影響を実験した結果を示す。第７図は面積１ｄのアモ
ルファスシリコン太陽電池を照度 □２０
０ルックスの螢光灯下で動作させた時の直列抵抗の影響
を示したものである。また第８図は直列抵抗と電気的特
性の減少率との関係を示したものである。第７図及び第
８図から読み取れるように直列抵抗の値が１０００の時
、特性の減少率は２％位であり、この程度の値ならほと
んど影響がないことが解った０従って上記パルス印加に
よって得られた２００以下の抵抗値は第７図、第８図に
示した１０００以下であることから、アモルファス太陽
電池の特性を劣化させないことは明らかである。The results of an experiment on the influence of the resistance value in region 18 on the characteristics of the solar cell will now be shown. Figure 7 shows the illuminance of an amorphous silicon solar cell with an area of 1 d □20
This figure shows the effect of series resistance when operating under 0 lux fluorescent light. Moreover, FIG. 8 shows the relationship between series resistance and the rate of decrease in electrical characteristics. As can be read from Figures 7 and 8, when the series resistance value is 1000, the reduction rate of the characteristics is about 2%, and it was found that this value has almost no effect. Since the obtained resistance value of 200 or less is 1000 or less as shown in FIGS. 7 and 8, it is clear that the characteristics of the amorphous solar cell are not deteriorated.
半導体接合層の破壊は光レーザ−（Ａｒレーザー、ＹＡ
Ｇレーザ−、ＣＯ□レーザー）を用いても可能であった
。The semiconductor bonding layer can be destroyed using optical lasers (Ar laser, YA laser).
This was also possible using G laser, CO□ laser).
更に上記タンデム型アモルファス太陽電池を真空容器中
に入れ電子ビーム（たとえば２０ＫＶ１０−６Ａ）の照
射によっても接合の破壊は可能であった。この場合モノ
シラン（ＳｉＨ＜）を主原料とする水素系アモルファス
シリコン（ａ−８ｔ：Ｈ）太陽電池の方がＳｉＦ、ガス
を含む原料ガスから作うレるフッ素系アモルファスシリ
コン（ａ−８ｔ：Ｆ：５’）太陽電池より低いエネルギ
ーで破壊された。Furthermore, it was also possible to destroy the junction by placing the tandem type amorphous solar cell in a vacuum container and irradiating it with an electron beam (for example, 20KV10-6A). In this case, hydrogen-based amorphous silicon (a-8t:H) solar cells that use monosilane (SiH<) as the main raw material are better than fluorine-based amorphous silicon (a-8t:F :5') Destroyed at lower energy than solar cells.
上記実施例は基体としてそれ自体が導電体である金属板
を用いたが、ガラスのような透光性絶縁板を用いても構
成することができる。即ち第９図に示すようにガラス板
２０の表面に透明導電膜２１を形成し、その上にアモル
ファス半導体接合層（ｐ−ｉ −ｎ／ｐ −ｉ−ｎ ）
２２を通常の手法で形成する。該半導体層２２上に背
面電極（Ａｌ金属）２３を真空蒸着し、上述の実施例に
おける透明電極１３．１５と同様に化学的手法で必要な
形状２３．２５にパターニングする。更に背面電極２３
．２５上の一部にＡｇペーストの印刷により電気的端子
２４．２６を形成し、その周辺をエポキシ系樹脂２７で
保護する。最後に上述の実施例と同様に電磁的手段で低
抵抗領域２８を形成して素子は完成する。完成した半導
体装置の斜視図を第１０図に示す０上記実施例は単一￥
ルを説明したが、第１１図に示すように同一基板２０上
に複数セルの素子を電気的に直列接続としたアモルファ
ス太陽電池も可能である０
℃魂７→；直列接続−されに−ｈ＝１太ｉ奄蟇０尊鉦塔
蕃以上本発明によれば、薄膜半導体層を低抵抗化して電
極取り出し端子を設けることにより、半導体層の同一表
面に電極を容易に作製することができ、半導体装置をア
センブリーする工程において大幅なコストダウンや自動
化が容易となり、経済的な利点があるばかりでなく、半
導体装置をアセンブリーするだめのスペースに対する制
限が著しく緩和される。Although the above embodiment uses a metal plate which is itself a conductor as the base, it is also possible to use a light-transmitting insulating plate such as glass. That is, as shown in FIG. 9, a transparent conductive film 21 is formed on the surface of a glass plate 20, and an amorphous semiconductor bonding layer (p-i-n/p-i-n) is formed thereon.
22 is formed in a conventional manner. A back electrode (Al metal) 23 is vacuum-deposited on the semiconductor layer 22 and patterned into a required shape 23.25 by a chemical method similar to the transparent electrode 13.15 in the above-described embodiment. Furthermore, the back electrode 23
．． Electrical terminals 24 and 26 are formed on a portion of 25 by printing Ag paste, and the periphery thereof is protected with epoxy resin 27. Finally, a low resistance region 28 is formed by electromagnetic means in the same manner as in the above-described embodiment, and the device is completed. A perspective view of the completed semiconductor device is shown in FIG.
However, as shown in Figure 11, an amorphous solar cell in which multiple cell elements are electrically connected in series on the same substrate 20 is also possible. According to the present invention, by reducing the resistance of the thin film semiconductor layer and providing an electrode extraction terminal, it is possible to easily produce an electrode on the same surface of the semiconductor layer. In the process of assembling semiconductor devices, it is possible to significantly reduce costs and facilitate automation, which not only has economic advantages, but also significantly reduces restrictions on space for assembling semiconductor devices.
第１図（ａ）、（ｂ）は従来の光応答半導体デバイスの
断面図、第２図は本発明による一実施例の半導体デバイ
スの断面図、第３図（ａ）〜（ｅ）は本発明による実施
例の製造工程を説明するための断面図、第４図は同実施
例による半導体デバイスの斜視図、第５図は本発明に適
用する低櫨抗化のために印加するパルス波形図、第６図
は印加パルス数と抵抗分節例を示す断面図及び斜視図、
第１１図は本発明による更に他の実施例を示す断面図で
ある０１１ニステンレス基板 １２：ａ−８ｉ １３
＋１５：透明電極 １４．１６：電極端子 １７：樹脂
コート膜 １８：低抵抗領域
代理人弁理士 福 士 愛 彦（他２名）（ａ）
ｆノ第１凶
第２図
２
第４図
第３図
第５図
０ ＃ ＃ ＃ ＃ ８０ ８０
Ｆ５ ＃＃＃−一
第７図
ｚ ＩｎＪFIGS. 1(a) and (b) are cross-sectional views of a conventional photoresponsive semiconductor device, FIG. 2 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention, and FIGS. 4 is a perspective view of a semiconductor device according to the embodiment, and FIG. 5 is a pulse waveform diagram applied to reduce the resistance applied to the present invention. , FIG. 6 is a cross-sectional view and a perspective view showing an example of the number of applied pulses and resistance division,
FIG. 11 is a sectional view showing still another embodiment of the present invention.011 Ni stainless steel substrate 12:a-8i 13
+15: Transparent electrode 14.16: Electrode terminal 17: Resin coat film 18: Low resistance area patent attorney Aihiko Fukushi (and 2 others) (a)
f No. 1 No. 2 Fig. 2 Fig. 4 Fig. 3 Fig. 5 Fig. 0 ＃ ＃ ＃ ＃ 80 80
F5 ###-1 Figure 7z InJ
Claims (1)
層と、該薄膜半導体層の一部に接合を破壊して形成され
た低抵抗領域と、上記薄膜半導体層上に形成された一方
の電極膜と、該電極膜と分離させて設けられ且つ上記低
抵抗領域に接続された他方の電極とを備えてなる薄膜半
導体装置。 ２、前記薄膜半導体層は、ｐ−１−ｎを一組としてこれ
らの接合を単数または複数層積層してなり、光応答性を
有することを特徴とする特許請求の範囲第１項記載の薄
膜半導体装置。 ３、前記導電性基体は、透光性絶縁基板上に透明導電膜
が形成されてなることを特徴とする特許請求の範囲第１
項又は第２項記載の薄膜半導体装置。 ４、前記薄膜半導体層上の電極膜は、一体的に形成され
た薄膜半導体上に複数個設けられてなり、低抵抗領域を
介して電極膜に対向する薄膜半導体の領域を電気的に直
列接続したことを特徴とする特許請求の範囲第３項記載
の薄膜半導体装置。 ５、前記薄膜半導体層は受光面側に一方の電極膜及び他
方の電極膜が形成されてなる太陽電池であるととを特徴
とする特許請求の範囲第２項記載の薄膜半導体装置。[Claims] A thin film semiconductor layer having a bond stacked on a conductive substrate, a low resistance region formed by breaking the bond in a part of the thin film semiconductor layer, and a thin film semiconductor layer on the thin film semiconductor layer. 1. A thin film semiconductor device comprising one electrode film formed on the electrode film, and the other electrode provided separately from the electrode film and connected to the low resistance region. 2. The thin film according to claim 1, wherein the thin film semiconductor layer is formed by stacking a single or multiple layers of junctions of p-1-n as a set, and has photoresponsiveness. Semiconductor equipment. 3. Claim 1, wherein the conductive substrate is formed by forming a transparent conductive film on a transparent insulating substrate.
The thin film semiconductor device according to item 1 or 2. 4. A plurality of electrode films on the thin film semiconductor layer are provided on the integrally formed thin film semiconductor, and regions of the thin film semiconductor facing the electrode films are electrically connected in series via a low resistance region. A thin film semiconductor device according to claim 3, characterized in that: 5. The thin film semiconductor device according to claim 2, wherein the thin film semiconductor layer is a solar cell in which one electrode film and the other electrode film are formed on the light receiving surface side.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57078851A JPS58196060A (en) | 1982-05-10 | 1982-05-10 | Thin film semiconductor device |
| US06/492,675 US4570332A (en) | 1982-05-10 | 1983-05-09 | Method of forming contact to thin film semiconductor device |
| DE19833317108 DE3317108A1 (en) | 1982-05-10 | 1983-05-10 | THIN FILM SEMICONDUCTOR COMPONENT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57078851A JPS58196060A (en) | 1982-05-10 | 1982-05-10 | Thin film semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58196060A true JPS58196060A (en) | 1983-11-15 |
| JPS6357952B2 JPS6357952B2 (en) | 1988-11-14 |
Family
ID=13673324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57078851A Granted JPS58196060A (en) | 1982-05-10 | 1982-05-10 | Thin film semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58196060A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113975A (en) * | 1983-11-25 | 1985-06-20 | Matsushita Electric Ind Co Ltd | Thin-film photovoltaic element |
| JPS6191971A (en) * | 1984-10-12 | 1986-05-10 | Fuji Electric Co Ltd | Manufacture of solar battery device |
| JPS61260683A (en) * | 1985-05-03 | 1986-11-18 | シーメンス ソーラー インダストリーズ，エル．ピー． | Thin film solar module and manufacture thereof |
| JPS6265479A (en) * | 1985-09-18 | 1987-03-24 | Fuji Electric Corp Res & Dev Ltd | Manufacture of thin film solar battery |
| JPS6355451U (en) * | 1986-09-27 | 1988-04-13 | ||
| JPS6413740U (en) * | 1987-07-17 | 1989-01-24 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4856372A (en) * | 1971-11-16 | 1973-08-08 | ||
| JPS5778852A (en) * | 1980-11-06 | 1982-05-17 | Nidek Kk | Binocular inverted image lens type photocoagulator |
-
1982
- 1982-05-10 JP JP57078851A patent/JPS58196060A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4856372A (en) * | 1971-11-16 | 1973-08-08 | ||
| JPS5778852A (en) * | 1980-11-06 | 1982-05-17 | Nidek Kk | Binocular inverted image lens type photocoagulator |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113975A (en) * | 1983-11-25 | 1985-06-20 | Matsushita Electric Ind Co Ltd | Thin-film photovoltaic element |
| JPS6191971A (en) * | 1984-10-12 | 1986-05-10 | Fuji Electric Co Ltd | Manufacture of solar battery device |
| JPS61260683A (en) * | 1985-05-03 | 1986-11-18 | シーメンス ソーラー インダストリーズ，エル．ピー． | Thin film solar module and manufacture thereof |
| JPS6265479A (en) * | 1985-09-18 | 1987-03-24 | Fuji Electric Corp Res & Dev Ltd | Manufacture of thin film solar battery |
| JPS6355451U (en) * | 1986-09-27 | 1988-04-13 | ||
| JPS6413740U (en) * | 1987-07-17 | 1989-01-24 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6357952B2 (en) | 1988-11-14 |
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