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JPS6193663A - Amorphous silicon transistor - Google Patents

Amorphous silicon transistor

Info

Publication number
JPS6193663A
JPS6193663A JP21475984A JP21475984A JPS6193663A JP S6193663 A JPS6193663 A JP S6193663A JP 21475984 A JP21475984 A JP 21475984A JP 21475984 A JP21475984 A JP 21475984A JP S6193663 A JPS6193663 A JP S6193663A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
lt
electrode
transistor
aluminum
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21475984A
Inventor
Yasuyoshi Mishima
Tetsuya Ogawa
Michiya Oura
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/7317Bipolar thin film transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101Devices sensitive to infra-red, visible or ultra-violet radiation
    • H01L31/11Devices sensitive to infra-red, visible or ultra-violet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
    • H01L31/1105Devices sensitive to infra-red, visible or ultra-violet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor the device being a bipolar phototransistor

Abstract

PURPOSE:To lower driving voltage, to increase currents and to stabilize an amorphous silicon transistor by extracting electrodes from an N<+> layer and a P<+> layer in an amorphous silicon film having N<+>IP<+>IN<+> structure. CONSTITUTION:Two P-I-N type diodes of P<+>a-Si:H films 3, 4 from silane to which diborane is added, Ia-Si:H films 5, 6 and N<+>a-Si:H films 7, 8 from silane to which phosphine is added are formed in parallel on an electrode 2 consisting of aluminum shaped onto a glass substrate 1, and electrodes 9, 10 composed of aluminum are evaporated onto the N<+> layer. The two diodes are connected to the outside while the common aluminum electrode 2 is used as a base electrode and the aluminum electrodes 9, 10 on the N<+> layer as an emitter electrode and a collector electrode respectively, thus completing an amorphous silicon transistor. the transistor is operated at operating voltage of approximately several V. When the common base electrode is formed by a transparent conductive film consisting of tin oxide, indium oxide or the like, the transistor can also be worked as a phototransistor.
JP21475984A 1984-10-12 1984-10-12 Amorphous silicon transistor Pending JPS6193663A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21475984A JPS6193663A (en) 1984-10-12 1984-10-12 Amorphous silicon transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21475984A JPS6193663A (en) 1984-10-12 1984-10-12 Amorphous silicon transistor

Publications (1)

Publication Number Publication Date
JPS6193663A true true JPS6193663A (en) 1986-05-12

Family

ID=16661079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21475984A Pending JPS6193663A (en) 1984-10-12 1984-10-12 Amorphous silicon transistor

Country Status (1)

Country Link
JP (1) JPS6193663A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060041A (en) * 1987-11-12 1991-10-22 Ricoh Research Institute Of General Electronics Amorphous silicon photosensor
US5298455A (en) * 1991-01-30 1994-03-29 Tdk Corporation Method for producing a non-single crystal semiconductor device
US5576222A (en) * 1992-01-27 1996-11-19 Tdk Corp. Method of making a semiconductor image sensor device
US5677551A (en) * 1994-11-15 1997-10-14 Fujitsu Limited Semiconductor optical device and an optical processing system that uses such a semiconductor optical system
WO2007119490A1 (en) * 2006-03-22 2007-10-25 Osaka University Transistor element, its manufacturing method, light emitting element, and display
JP2009007985A (en) * 2007-06-27 2009-01-15 Ogura Clutch Co Ltd Air supply system
US8629865B2 (en) 2007-12-14 2014-01-14 Koninklijke Philips N.V. Organic light-emitting device with adjustable charge carrier injection

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060041A (en) * 1987-11-12 1991-10-22 Ricoh Research Institute Of General Electronics Amorphous silicon photosensor
US5298455A (en) * 1991-01-30 1994-03-29 Tdk Corporation Method for producing a non-single crystal semiconductor device
US5442198A (en) * 1991-01-30 1995-08-15 Tdk Corporation Non-single crystal semiconductor device with sub-micron grain size
US5576222A (en) * 1992-01-27 1996-11-19 Tdk Corp. Method of making a semiconductor image sensor device
US5677551A (en) * 1994-11-15 1997-10-14 Fujitsu Limited Semiconductor optical device and an optical processing system that uses such a semiconductor optical system
US5889296A (en) * 1994-11-15 1999-03-30 Fujitsu Limited Semiconductor optical device and an optical processing system that uses such a semiconductor optical system
WO2007119490A1 (en) * 2006-03-22 2007-10-25 Osaka University Transistor element, its manufacturing method, light emitting element, and display
US8120242B2 (en) 2006-03-22 2012-02-21 Osaka University Transistor and process of producing the same, light-emitting device, and display
JP2009007985A (en) * 2007-06-27 2009-01-15 Ogura Clutch Co Ltd Air supply system
US8629865B2 (en) 2007-12-14 2014-01-14 Koninklijke Philips N.V. Organic light-emitting device with adjustable charge carrier injection

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