JPS57128054A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57128054A JPS57128054A JP56205327A JP20532781A JPS57128054A JP S57128054 A JPS57128054 A JP S57128054A JP 56205327 A JP56205327 A JP 56205327A JP 20532781 A JP20532781 A JP 20532781A JP S57128054 A JPS57128054 A JP S57128054A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- polycrystalline
- resistor
- chemical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000000151 deposition Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 239000000126 substance Substances 0.000 abstract 3
- 239000012808 vapor phase Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent the variation in the resistance value of a polycrystalline Si resistor by covering by a chemical vapor phase depositing method the resistor with an Si3N4 film. CONSTITUTION:A polycrystalline Si layer 133 is formed on an insulating layer 132 on an Si substrate 131. A thin thermally oxidized film 134 is formed at the periphery of the layer 133. An Ni3N4 film 135 is accumulated by a chemical vapor phase depositing method on the side face of the layer 133 on the film 134. Actually, an SiO2 film 136 is superposed by a chemical vapor phase depositing method to secure sufficient thickness as a diffusion mask. Thereafter, an insulating layer 137 is accumulated, and aluminum is deposited thereon, thereby completing the treatment. The polycrystalline Si resistor thus obtained in the element of the structure thus composed has large threshold voltage of the parasitic MOS against the substrate voltage, and the threshold voltage shifts slightly positively for the thermal processing step of assembling and sealing the element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56205327A JPS57128054A (en) | 1981-12-21 | 1981-12-21 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56205327A JPS57128054A (en) | 1981-12-21 | 1981-12-21 | Semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53047779A Division JPS5810863B2 (en) | 1978-04-24 | 1978-04-24 | semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57128054A true JPS57128054A (en) | 1982-08-09 |
Family
ID=16505089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56205327A Pending JPS57128054A (en) | 1981-12-21 | 1981-12-21 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57128054A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60244057A (en) * | 1984-05-18 | 1985-12-03 | Nec Corp | Semiconductor device |
| JPH06350037A (en) * | 1993-06-10 | 1994-12-22 | Nec Corp | Bipolar type semiconductor integrated circuit |
| US5420053A (en) * | 1993-05-07 | 1995-05-30 | Nec Corporation | Method for manufacturing semiconductor device having bipolar transistor and polycrystalline silicon resistor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54105485A (en) * | 1978-02-06 | 1979-08-18 | Mitsubishi Electric Corp | Manufacture of semiconductor unit |
-
1981
- 1981-12-21 JP JP56205327A patent/JPS57128054A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54105485A (en) * | 1978-02-06 | 1979-08-18 | Mitsubishi Electric Corp | Manufacture of semiconductor unit |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60244057A (en) * | 1984-05-18 | 1985-12-03 | Nec Corp | Semiconductor device |
| US5420053A (en) * | 1993-05-07 | 1995-05-30 | Nec Corporation | Method for manufacturing semiconductor device having bipolar transistor and polycrystalline silicon resistor |
| JPH06350037A (en) * | 1993-06-10 | 1994-12-22 | Nec Corp | Bipolar type semiconductor integrated circuit |
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