JPS6410222A - Substrate for thin film passive element - Google Patents

Substrate for thin film passive element

Info

Publication number
JPS6410222A
JPS6410222A JP62165474A JP16547487A JPS6410222A JP S6410222 A JPS6410222 A JP S6410222A JP 62165474 A JP62165474 A JP 62165474A JP 16547487 A JP16547487 A JP 16547487A JP S6410222 A JPS6410222 A JP S6410222A
Authority
JP
Japan
Prior art keywords
semiconductor layers
etching
stage
consisting
low resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62165474A
Inventor
Kunio Masushige
Masaki Yuki
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP62165474A priority Critical patent/JPS6410222A/en
Publication of JPS6410222A publication Critical patent/JPS6410222A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To facilitate the discrimination of the end of an etching away stage and to stabilize the stage by disposing low resistance semiconductor layers also to regions in addition to the contact regions between semiconductor layers and electrodes. CONSTITUTION:A passivation film 2 consisting of SiO, SiON, etc., and the semiconductor layer 3 consisting of amorphous silicon, polysilicon, etc., are deposited on a substrate 1 consisting of glass, ceramics, etc., and this semiconductor layer 3 is patterned. The low resistance semiconductor layers are formed thereon in the regions which include the contact regions between the semiconductor layers 3 and source electrodes and drain electrodes 5 and are of the size sufficient to check the end point of etching at the time of etching the low resistance semiconductor layers 4 in the later stage; thereafter, the source electrodes and drain electrodes 5 are formed. The end point of the etching is thereby easily checked and the stage is easily executed.
JP62165474A 1987-07-03 1987-07-03 Substrate for thin film passive element Pending JPS6410222A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62165474A JPS6410222A (en) 1987-07-03 1987-07-03 Substrate for thin film passive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62165474A JPS6410222A (en) 1987-07-03 1987-07-03 Substrate for thin film passive element

Publications (1)

Publication Number Publication Date
JPS6410222A true JPS6410222A (en) 1989-01-13

Family

ID=15813096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62165474A Pending JPS6410222A (en) 1987-07-03 1987-07-03 Substrate for thin film passive element

Country Status (1)

Country Link
JP (1) JPS6410222A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0917987A (en) * 1995-06-29 1997-01-17 Nec Corp Contact type image sensor and manufacturing method
US6369788B1 (en) 1990-11-26 2002-04-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
JP2004281687A (en) * 2003-03-14 2004-10-07 Fujitsu Display Technologies Corp Thin film transistor substrate and manufacturing method thereof
US6893906B2 (en) 1990-11-26 2005-05-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
JP2005353648A (en) * 2004-06-08 2005-12-22 International Display Technology Kk Thin-film transistor and its manufacturing method
JP2006080494A (en) * 2004-08-03 2006-03-23 Semiconductor Energy Lab Co Ltd Display device and its manufacturing method and television apparatus
JP2008041865A (en) * 2006-08-04 2008-02-21 Mitsubishi Electric Corp Display, and manufacturing method thereof
WO2011141948A1 (en) * 2010-05-10 2011-11-17 パナソニック株式会社 Thin film transistor device and method for manufacturing thin film transistor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151878A (en) * 1984-08-21 1986-03-14 Seiko Instr & Electronics Ltd Manufacture of thin-film transistor
JPS61203484A (en) * 1985-03-06 1986-09-09 Toshiba Corp Drive circuit substrate for display unit and manufacture thereof
JPS61249078A (en) * 1985-04-27 1986-11-06 Sharp Kk Matrix type display unit
JPS6273669A (en) * 1985-09-26 1987-04-04 Seiko Instr & Electronics Ltd Manufacture of thin-film transistor device
JPS62126677A (en) * 1985-11-27 1987-06-08 Sharp Corp Thin film transistor array

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151878A (en) * 1984-08-21 1986-03-14 Seiko Instr & Electronics Ltd Manufacture of thin-film transistor
JPS61203484A (en) * 1985-03-06 1986-09-09 Toshiba Corp Drive circuit substrate for display unit and manufacture thereof
JPS61249078A (en) * 1985-04-27 1986-11-06 Sharp Kk Matrix type display unit
JPS6273669A (en) * 1985-09-26 1987-04-04 Seiko Instr & Electronics Ltd Manufacture of thin-film transistor device
JPS62126677A (en) * 1985-11-27 1987-06-08 Sharp Corp Thin film transistor array

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6369788B1 (en) 1990-11-26 2002-04-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US6893906B2 (en) 1990-11-26 2005-05-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
JPH0917987A (en) * 1995-06-29 1997-01-17 Nec Corp Contact type image sensor and manufacturing method
JP2004281687A (en) * 2003-03-14 2004-10-07 Fujitsu Display Technologies Corp Thin film transistor substrate and manufacturing method thereof
JP2005353648A (en) * 2004-06-08 2005-12-22 International Display Technology Kk Thin-film transistor and its manufacturing method
JP2006080494A (en) * 2004-08-03 2006-03-23 Semiconductor Energy Lab Co Ltd Display device and its manufacturing method and television apparatus
JP2008041865A (en) * 2006-08-04 2008-02-21 Mitsubishi Electric Corp Display, and manufacturing method thereof
WO2011141948A1 (en) * 2010-05-10 2011-11-17 パナソニック株式会社 Thin film transistor device and method for manufacturing thin film transistor device

Similar Documents

Publication Publication Date Title
US4789647A (en) Method of manufacturing a semiconductor device, in which a metallization with a thick connection electrode is provided on a semiconductor body
EP0391562A3 (en) Semiconductor devices incorporating a tungsten contact and fabrication thereof
WO2002082554A1 (en) Semiconductor device and method for manufacture thereof
JPH0372681A (en) Manufacture of semiconductor device
JPS6421967A (en) Semiconductor device and manufacture thereof
JPS64756A (en) Semiconductor device and capacitor device and manufacture thereof
JPS55163860A (en) Manufacture of semiconductor device
EP0288052A3 (en) Semiconductor device comprising a substrate, and production method thereof
GB1381602A (en) Integrated circuit structure and method for making integrated circuit structure
JPS58175846A (en) Manufacture of semicondutor device
JPS61258453A (en) Manufacture of semiconductor device
JPH01181459A (en) Gate isolation structure forming process
EP0510604A3 (en) Semiconductor device and method of manufacturing the same
KR970072480A (en) A method of manufacturing a thin film transistor and a structure of a thin film transistor manufactured by the method
JPS61198780A (en) Manufacture of semiconductor device
JPH02177368A (en) Thin film transistor and its manufacture
JPS6433969A (en) Manufacture of semiconductor device
JPH04122063A (en) Semiconductor device and manufacture thereof
JP3175188B2 (en) Method of forming alignment mark
EP1033752A3 (en) Dual work function CMOS device
JP2005066817A (en) Microstructure
EP0899782A3 (en) Method of manufacturing a field effect transistor
EP1148559A3 (en) High speed semiconductor photodetector and method of fabricating the same
JPH04335572A (en) Formation method of gate insulating film
JPS5972745A (en) Semiconductor device