JPS6410222A - Substrate for thin film passive element - Google Patents
Substrate for thin film passive elementInfo
- Publication number
- JPS6410222A JPS6410222A JP62165474A JP16547487A JPS6410222A JP S6410222 A JPS6410222 A JP S6410222A JP 62165474 A JP62165474 A JP 62165474A JP 16547487 A JP16547487 A JP 16547487A JP S6410222 A JPS6410222 A JP S6410222A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layers
- etching
- stage
- low resistance
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
PURPOSE:To facilitate the discrimination of the end of an etching away stage and to stabilize the stage by disposing low resistance semiconductor layers also to regions in addition to the contact regions between semiconductor layers and electrodes. CONSTITUTION:A passivation film 2 consisting of SiO, SiON, etc., and the semiconductor layer 3 consisting of amorphous silicon, polysilicon, etc., are deposited on a substrate 1 consisting of glass, ceramics, etc., and this semiconductor layer 3 is patterned. The low resistance semiconductor layers are formed thereon in the regions which include the contact regions between the semiconductor layers 3 and source electrodes and drain electrodes 5 and are of the size sufficient to check the end point of etching at the time of etching the low resistance semiconductor layers 4 in the later stage; thereafter, the source electrodes and drain electrodes 5 are formed. The end point of the etching is thereby easily checked and the stage is easily executed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62165474A JPS6410222A (en) | 1987-07-03 | 1987-07-03 | Substrate for thin film passive element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62165474A JPS6410222A (en) | 1987-07-03 | 1987-07-03 | Substrate for thin film passive element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6410222A true JPS6410222A (en) | 1989-01-13 |
Family
ID=15813096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62165474A Pending JPS6410222A (en) | 1987-07-03 | 1987-07-03 | Substrate for thin film passive element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6410222A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0917987A (en) * | 1995-06-29 | 1997-01-17 | Nec Corp | Contact type image sensor and manufacturing method |
US6369788B1 (en) | 1990-11-26 | 2002-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
JP2004281687A (en) * | 2003-03-14 | 2004-10-07 | Fujitsu Display Technologies Corp | Thin film transistor substrate and manufacturing method thereof |
US6893906B2 (en) | 1990-11-26 | 2005-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
JP2005353648A (en) * | 2004-06-08 | 2005-12-22 | International Display Technology Kk | Thin-film transistor and its manufacturing method |
JP2006080494A (en) * | 2004-08-03 | 2006-03-23 | Semiconductor Energy Lab Co Ltd | Display device and its manufacturing method and television apparatus |
JP2008041865A (en) * | 2006-08-04 | 2008-02-21 | Mitsubishi Electric Corp | Display, and manufacturing method thereof |
WO2011141948A1 (en) * | 2010-05-10 | 2011-11-17 | パナソニック株式会社 | Thin film transistor device and method for manufacturing thin film transistor device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6151878A (en) * | 1984-08-21 | 1986-03-14 | Seiko Instr & Electronics Ltd | Manufacture of thin-film transistor |
JPS61203484A (en) * | 1985-03-06 | 1986-09-09 | 株式会社東芝 | Drive circuit substrate for display unit and manufacture thereof |
JPS61249078A (en) * | 1985-04-27 | 1986-11-06 | シャープ株式会社 | Matrix type display unit |
JPS6273669A (en) * | 1985-09-26 | 1987-04-04 | Seiko Instr & Electronics Ltd | Manufacture of thin-film transistor device |
JPS62126677A (en) * | 1985-11-27 | 1987-06-08 | Sharp Corp | Thin film transistor array |
-
1987
- 1987-07-03 JP JP62165474A patent/JPS6410222A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6151878A (en) * | 1984-08-21 | 1986-03-14 | Seiko Instr & Electronics Ltd | Manufacture of thin-film transistor |
JPS61203484A (en) * | 1985-03-06 | 1986-09-09 | 株式会社東芝 | Drive circuit substrate for display unit and manufacture thereof |
JPS61249078A (en) * | 1985-04-27 | 1986-11-06 | シャープ株式会社 | Matrix type display unit |
JPS6273669A (en) * | 1985-09-26 | 1987-04-04 | Seiko Instr & Electronics Ltd | Manufacture of thin-film transistor device |
JPS62126677A (en) * | 1985-11-27 | 1987-06-08 | Sharp Corp | Thin film transistor array |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6369788B1 (en) | 1990-11-26 | 2002-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
US6893906B2 (en) | 1990-11-26 | 2005-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
JPH0917987A (en) * | 1995-06-29 | 1997-01-17 | Nec Corp | Contact type image sensor and manufacturing method |
JP2004281687A (en) * | 2003-03-14 | 2004-10-07 | Fujitsu Display Technologies Corp | Thin film transistor substrate and manufacturing method thereof |
JP2005353648A (en) * | 2004-06-08 | 2005-12-22 | International Display Technology Kk | Thin-film transistor and its manufacturing method |
JP2006080494A (en) * | 2004-08-03 | 2006-03-23 | Semiconductor Energy Lab Co Ltd | Display device and its manufacturing method and television apparatus |
JP2008041865A (en) * | 2006-08-04 | 2008-02-21 | Mitsubishi Electric Corp | Display, and manufacturing method thereof |
WO2011141948A1 (en) * | 2010-05-10 | 2011-11-17 | パナソニック株式会社 | Thin film transistor device and method for manufacturing thin film transistor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4789647A (en) | Method of manufacturing a semiconductor device, in which a metallization with a thick connection electrode is provided on a semiconductor body | |
EP0510604A3 (en) | Semiconductor device and method of manufacturing the same | |
KR980006387A (en) | Poly resistor of analog semiconductor device and method for manufacturing the same | |
JPS6433969A (en) | Manufacture of semiconductor device | |
KR970018419A (en) | Semiconductor fuse device and forming method thereof and semiconductor igniter device and forming method thereof | |
EP0899782A3 (en) | Method of manufacturing a field effect transistor | |
JPS6410222A (en) | Substrate for thin film passive element | |
EP0877420A3 (en) | Method of forming a polysilicon buried contact and a structure thereof | |
JPS6430272A (en) | Thin film transistor | |
EP0208877A3 (en) | Method of manufacturing semiconductor devices having connecting areas | |
JPS6441240A (en) | Semiconductor integrated circuit device | |
JPS6420663A (en) | Manufacture of semiconductor device | |
JPS6476739A (en) | Manufacture of semiconductor device | |
JPS6489539A (en) | Manufacture of semiconductor device | |
JPS52117079A (en) | Preparation of semiconductor device | |
JPS6430252A (en) | Semiconductor device | |
JPS6430259A (en) | Semiconductor device | |
JPS6421940A (en) | Manufacture of semiconductor device | |
KR940001346A (en) | Method of manufacturing semiconductor device separator | |
KR930014801A (en) | Method for manufacturing charge storage electrode of semiconductor device | |
JPS6431453A (en) | Manufacture of semiconductor device | |
JPS6481357A (en) | Manufacture of semiconductor device | |
KR970005674B1 (en) | Amorphous silicon mask for porous silicon selective growth | |
KR940008094A (en) | Capacitor Manufacturing Method of Semiconductor Device | |
KR970053941A (en) | Method for manufacturing charge storage electrode of semiconductor device |