KR970005674B1 - Amorphous silicon mask for porous silicon selective growth - Google Patents
Amorphous silicon mask for porous silicon selective growth Download PDFInfo
- Publication number
- KR970005674B1 KR970005674B1 KR93029501A KR930029501A KR970005674B1 KR 970005674 B1 KR970005674 B1 KR 970005674B1 KR 93029501 A KR93029501 A KR 93029501A KR 930029501 A KR930029501 A KR 930029501A KR 970005674 B1 KR970005674 B1 KR 970005674B1
- Authority
- KR
- South Korea
- Prior art keywords
- amorphous silicon
- silicon layer
- anode reaction
- selective growth
- forming
- Prior art date
Links
Landscapes
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
- Weting (AREA)
Abstract
A method for masking amorphous silicon is described that can protect a device region at the final step of semiconductor device fabrication and provide an amorphous silicon layer capable of anode reaction. The method includes the steps of forming an insulating layer 7 of SiO2 or Si3N4 over a substrate where aluminium electrodes are made and then forming an intrinsic or N types of an amorphous silicon layer 8 by CVD of sputtering, patterning the parts where a poly-silicon layer 9 is formed to etch the amorphous silicon layer 8 of the parts, and selectively forming the poly-silicon layer 9 by the anode reaction in HF liquid. Thereby, it is possible to easily form a fine structure of the semiconductor device and allow the amorphous silicon layer 8 to serve as a protection layer so that the aluminium electrodes can be kept completely after the anode reaction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR93029501A KR970005674B1 (en) | 1993-12-24 | 1993-12-24 | Amorphous silicon mask for porous silicon selective growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR93029501A KR970005674B1 (en) | 1993-12-24 | 1993-12-24 | Amorphous silicon mask for porous silicon selective growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950021043A KR950021043A (en) | 1995-07-26 |
| KR970005674B1 true KR970005674B1 (en) | 1997-04-18 |
Family
ID=19372533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR93029501A KR970005674B1 (en) | 1993-12-24 | 1993-12-24 | Amorphous silicon mask for porous silicon selective growth |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970005674B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7658125B2 (en) | 2004-06-25 | 2010-02-09 | Aisin Seiki Kabushiki Kaisha | Steering device |
-
1993
- 1993-12-24 KR KR93029501A patent/KR970005674B1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7658125B2 (en) | 2004-06-25 | 2010-02-09 | Aisin Seiki Kabushiki Kaisha | Steering device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR950021043A (en) | 1995-07-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR960030451A (en) | Diffusion mask and method for manufacturing pn junction device using the same | |
| KR900002415A (en) | Semiconductor manufacturing method | |
| JPS6433969A (en) | Manufacture of semiconductor device | |
| WO2000001010A3 (en) | Method for producing semiconductor components | |
| US4125427A (en) | Method of processing a semiconductor | |
| JPS5599744A (en) | Manufacture of semiconductor device | |
| KR970005674B1 (en) | Amorphous silicon mask for porous silicon selective growth | |
| TW374203B (en) | A method for forming a fine contact hole in a semiconductor device | |
| JPS6410222A (en) | Substrate for thin film passive element | |
| SE9504150D0 (en) | Method of manufacturing a semiconductor device | |
| TW324110B (en) | Method for fabrication metal wire of semiconductor device | |
| JPS52124860A (en) | Electrode formation method for semiconductor devices | |
| JPS56135972A (en) | Manufacture of semiconductor device | |
| JPS54116882A (en) | Manufacture of semiconductor device | |
| JPS55134932A (en) | Preparation of semiconductor device | |
| JPS57124443A (en) | Forming method for electrode layer | |
| JPS5762543A (en) | Manufacture of semiconductor device | |
| JPS6412576A (en) | Manufacture of semiconductor device | |
| JPS6412578A (en) | Manufacture of semiconductor device | |
| KR920020631A (en) | Polycrystalline Silicon Layer Etching Method of Semiconductor Device | |
| KR970053388A (en) | How to form shallow trench isolation in semiconductor devices | |
| JPS5679446A (en) | Production of semiconductor device | |
| KR950001908A (en) | Contact hole formation method of semiconductor device | |
| JPS6489539A (en) | Manufacture of semiconductor device | |
| JPS5732623A (en) | Fabricating method of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| N231 | Notification of change of applicant | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20021226 Year of fee payment: 7 |
|
| FPAY | Annual fee payment |
Payment date: 20040315 Year of fee payment: 17 |
|
| EXPY | Expiration of term |