JPS56150850A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS56150850A
JPS56150850A JP5335080A JP5335080A JPS56150850A JP S56150850 A JPS56150850 A JP S56150850A JP 5335080 A JP5335080 A JP 5335080A JP 5335080 A JP5335080 A JP 5335080A JP S56150850 A JPS56150850 A JP S56150850A
Authority
JP
Japan
Prior art keywords
oxidized film
electrode
base
film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5335080A
Other languages
Japanese (ja)
Other versions
JPH0222544B2 (en
Inventor
Minoru Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5335080A priority Critical patent/JPS56150850A/en
Publication of JPS56150850A publication Critical patent/JPS56150850A/en
Publication of JPH0222544B2 publication Critical patent/JPH0222544B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic

Abstract

PURPOSE:To increase the density of an I<2>L circuit and the like by providing conductive patterns made of doped polysilicon films and high melting point metallic silicide films and forming a diffused layers on a substrate in the step of thermally oxidizing the periphery of the patterns, thereby forming electrode wirings insulated from each other. CONSTITUTION:After an oxidized film is formed on a part of a base 26 on a substrate on which the base 26 and an injector 27 are formed in the step of forming, for example, the collector diffused layer of an I<2>L, As-doped polysilicon, MoSi2 and Si nitrided films are sequentially accumulated on the oxidized film. Subsequently, nitrided film masks 32a-32c are formed, and conductive patterns 33a-33c and an oxidized film pattern 34 are formed by etching. When a thick oxidized film 35 and a thin oxidized film 36 are respectively formed by a thermal oxidation on the side surface of the conductor and on the Si substrate in the next stage, an impurity is diffused from the polysilicon, resulting in the formation of an n<+> type collector region 37. After the film 36 is then removed by a reactive ion etcing, a base electrode 40 and an injector electrode 41 made of aluminum layer are formed. Thus, a collector electrode 38 and a jumper wire 39 having low resistance as well as an I<2>L element having a base electrode including a wide insulated base electrode can be formed in high density.
JP5335080A 1980-04-22 1980-04-22 Manufacture of semiconductor integrated circuit Granted JPS56150850A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5335080A JPS56150850A (en) 1980-04-22 1980-04-22 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5335080A JPS56150850A (en) 1980-04-22 1980-04-22 Manufacture of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS56150850A true JPS56150850A (en) 1981-11-21
JPH0222544B2 JPH0222544B2 (en) 1990-05-18

Family

ID=12940322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5335080A Granted JPS56150850A (en) 1980-04-22 1980-04-22 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS56150850A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5591656A (en) * 1991-09-24 1997-01-07 Matsushita Electronics Corporation, Ltd. Semiconductor integrated circuit device with self-aligned superhigh speed bipolar transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117579A (en) * 1976-03-30 1977-10-03 Nec Corp Semiconductor device
JPS53142196A (en) * 1977-05-18 1978-12-11 Hitachi Ltd Bipolar type semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117579A (en) * 1976-03-30 1977-10-03 Nec Corp Semiconductor device
JPS53142196A (en) * 1977-05-18 1978-12-11 Hitachi Ltd Bipolar type semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5591656A (en) * 1991-09-24 1997-01-07 Matsushita Electronics Corporation, Ltd. Semiconductor integrated circuit device with self-aligned superhigh speed bipolar transistor

Also Published As

Publication number Publication date
JPH0222544B2 (en) 1990-05-18

Similar Documents

Publication Publication Date Title
US4263058A (en) Composite conductive structures in integrated circuits and method of making same
JPS5477081A (en) Semiconductor device and production of the same
US3432920A (en) Semiconductor devices and methods of making them
US3725743A (en) Multilayer wiring structure
JPS5669844A (en) Manufacture of semiconductor device
JPS5944861A (en) Semiconductor device and manufacture thereof
US3359467A (en) Resistors for integrated circuits
JPS5740975A (en) Manufacture for semiconductor device
JPS56146246A (en) Manufacture of semiconductor integrated circuit
US4261003A (en) Integrated circuit structures with full dielectric isolation and a novel method for fabrication thereof
US4883772A (en) Process for making a self-aligned silicide shunt
JPS56150850A (en) Manufacture of semiconductor integrated circuit
US4544941A (en) Semiconductor device having multiple conductive layers and the method of manufacturing the semiconductor device
US4216573A (en) Three mask process for making field effect transistors
JPS56150851A (en) Manufacture of semiconductor integrated circuit
JPS55125645A (en) Production of semiconductor device
JPS56146232A (en) Manufacture of semiconductor device
JPS57124429A (en) Manufacture of semiconductor device
JPS54105485A (en) Manufacture of semiconductor unit
JPS5527659A (en) Method of manufacturing semiconductor device
JPS5678139A (en) Manufacture of semiconductor integrated circuit
JPS6125217B2 (en)
KR0157119B1 (en) Semiconductor device and its manufacture
JPS5676562A (en) Manufacture of semiconductor integrated circuit
JPS5645049A (en) Manufacture of semiconductor device