JPS6481381A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6481381A
JPS6481381A JP23732887A JP23732887A JPS6481381A JP S6481381 A JPS6481381 A JP S6481381A JP 23732887 A JP23732887 A JP 23732887A JP 23732887 A JP23732887 A JP 23732887A JP S6481381 A JPS6481381 A JP S6481381A
Authority
JP
Japan
Prior art keywords
self
oxide film
etched
photoresist
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23732887A
Other languages
Japanese (ja)
Inventor
Hideto Furuyama
Shigeki Takahashi
Atsushi Kurobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP23732887A priority Critical patent/JPS6481381A/en
Publication of JPS6481381A publication Critical patent/JPS6481381A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To form a clean surface without loss of fine workability of dry etching by forming and removing a self-oxide film in which its surface can be isotropically treated. CONSTITUTION:With a photoresist 3 as a mask an N-type GaAs current narrowing layer 2 is dry etched. Then, this wafer is boiled with aqueous hydrogen peroxide solution for 10 min. As a result, a self-oxide film 5 of Ga and As is formed on the dry etched surface. In this case, impurities of chloride, carbide, etc., adhered by the dry etching remain on the layer 5. Thereafter, the photoresist 3 is removed, and treated with hydrochloric acid, thereby easily removing the film 5. Simultaneously, the impurities are removed. Further, to form a self-oxide film, the base GaAs is removed. As a result, it is substantially isotropically etched from the surface.
JP23732887A 1987-09-24 1987-09-24 Manufacture of semiconductor device Pending JPS6481381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23732887A JPS6481381A (en) 1987-09-24 1987-09-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23732887A JPS6481381A (en) 1987-09-24 1987-09-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6481381A true JPS6481381A (en) 1989-03-27

Family

ID=17013745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23732887A Pending JPS6481381A (en) 1987-09-24 1987-09-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6481381A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54127279A (en) * 1978-03-27 1979-10-03 Nippon Telegr & Teleph Corp <Ntt> Impurity diffusing method
JPS58171823A (en) * 1982-04-02 1983-10-08 Nec Corp Preparation of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54127279A (en) * 1978-03-27 1979-10-03 Nippon Telegr & Teleph Corp <Ntt> Impurity diffusing method
JPS58171823A (en) * 1982-04-02 1983-10-08 Nec Corp Preparation of semiconductor device

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