JPS6481381A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6481381A JPS6481381A JP23732887A JP23732887A JPS6481381A JP S6481381 A JPS6481381 A JP S6481381A JP 23732887 A JP23732887 A JP 23732887A JP 23732887 A JP23732887 A JP 23732887A JP S6481381 A JPS6481381 A JP S6481381A
- Authority
- JP
- Japan
- Prior art keywords
- self
- oxide film
- etched
- photoresist
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To form a clean surface without loss of fine workability of dry etching by forming and removing a self-oxide film in which its surface can be isotropically treated. CONSTITUTION:With a photoresist 3 as a mask an N-type GaAs current narrowing layer 2 is dry etched. Then, this wafer is boiled with aqueous hydrogen peroxide solution for 10 min. As a result, a self-oxide film 5 of Ga and As is formed on the dry etched surface. In this case, impurities of chloride, carbide, etc., adhered by the dry etching remain on the layer 5. Thereafter, the photoresist 3 is removed, and treated with hydrochloric acid, thereby easily removing the film 5. Simultaneously, the impurities are removed. Further, to form a self-oxide film, the base GaAs is removed. As a result, it is substantially isotropically etched from the surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23732887A JPS6481381A (en) | 1987-09-24 | 1987-09-24 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23732887A JPS6481381A (en) | 1987-09-24 | 1987-09-24 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6481381A true JPS6481381A (en) | 1989-03-27 |
Family
ID=17013745
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23732887A Pending JPS6481381A (en) | 1987-09-24 | 1987-09-24 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6481381A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54127279A (en) * | 1978-03-27 | 1979-10-03 | Nippon Telegr & Teleph Corp <Ntt> | Impurity diffusing method |
JPS58171823A (en) * | 1982-04-02 | 1983-10-08 | Nec Corp | Preparation of semiconductor device |
-
1987
- 1987-09-24 JP JP23732887A patent/JPS6481381A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54127279A (en) * | 1978-03-27 | 1979-10-03 | Nippon Telegr & Teleph Corp <Ntt> | Impurity diffusing method |
JPS58171823A (en) * | 1982-04-02 | 1983-10-08 | Nec Corp | Preparation of semiconductor device |
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