JPS51114875A - Semiconductor device manufacturing method - Google Patents
Semiconductor device manufacturing methodInfo
- Publication number
- JPS51114875A JPS51114875A JP4013075A JP4013075A JPS51114875A JP S51114875 A JPS51114875 A JP S51114875A JP 4013075 A JP4013075 A JP 4013075A JP 4013075 A JP4013075 A JP 4013075A JP S51114875 A JPS51114875 A JP S51114875A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- device manufacturing
- silicon dioxide
- witstanding
- ghdrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: Voltage witstanding yield of mesa-type semiconductors is improved by removing silicon dioxide contaminated when structuring electrodes, with hydrofluoric acid solution and by forming a silicon dioxide with ghdrogen peroxide water.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4013075A JPS51114875A (en) | 1975-04-01 | 1975-04-01 | Semiconductor device manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4013075A JPS51114875A (en) | 1975-04-01 | 1975-04-01 | Semiconductor device manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51114875A true JPS51114875A (en) | 1976-10-08 |
Family
ID=12572212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4013075A Pending JPS51114875A (en) | 1975-04-01 | 1975-04-01 | Semiconductor device manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51114875A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58146696U (en) * | 1982-03-25 | 1983-10-03 | アロン化成株式会社 | Continuous cutting tool |
WO1990013911A1 (en) * | 1989-05-07 | 1990-11-15 | Tadahiro Ohmi | Method of forming oxide film |
WO1990013912A1 (en) * | 1989-05-07 | 1990-11-15 | Tadahiro Ohmi | Silicon oxide film and semiconductor device having the same |
JP2594702B2 (en) * | 1989-05-07 | 1997-03-26 | 忠弘 大見 | Silicon oxide film and semiconductor device having the same |
-
1975
- 1975-04-01 JP JP4013075A patent/JPS51114875A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58146696U (en) * | 1982-03-25 | 1983-10-03 | アロン化成株式会社 | Continuous cutting tool |
WO1990013911A1 (en) * | 1989-05-07 | 1990-11-15 | Tadahiro Ohmi | Method of forming oxide film |
WO1990013912A1 (en) * | 1989-05-07 | 1990-11-15 | Tadahiro Ohmi | Silicon oxide film and semiconductor device having the same |
US5360768A (en) * | 1989-05-07 | 1994-11-01 | Tadahiro Ohmi | Method of forming oxide film |
JP2594702B2 (en) * | 1989-05-07 | 1997-03-26 | 忠弘 大見 | Silicon oxide film and semiconductor device having the same |
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