JPS574164A - Sos/mos transistor - Google Patents

Sos/mos transistor

Info

Publication number
JPS574164A
JPS574164A JP7741680A JP7741680A JPS574164A JP S574164 A JPS574164 A JP S574164A JP 7741680 A JP7741680 A JP 7741680A JP 7741680 A JP7741680 A JP 7741680A JP S574164 A JPS574164 A JP S574164A
Authority
JP
Japan
Prior art keywords
concentration
impurities
gate
region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7741680A
Other languages
Japanese (ja)
Inventor
Masao Fukuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7741680A priority Critical patent/JPS574164A/en
Publication of JPS574164A publication Critical patent/JPS574164A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To work all original gate width as an effective gate by a method wherein the concentration of the impurities of the side and the lowermost section of an island-shaped Si layer just under the gate is made concentration, which is comparatively high and in which the desired threshold is obtained extending over the whole width of the surface. CONSTITUTION:A Si monocrystal film grown on a sapphire substrate 1 is mesa- etched and the island-shaped Si layer 2 is made up, the surface and the side of the layer 2 are coated with a gate oxide film 8 together and gate poly Si is placed on the oxide film. A region 7 of the lowermost section in the layer 2 is built up so that the concentration of impurities is comparatively high in order to decrease leak due to punch-through and back-channel. The regions 4 of the sides are regions having the high concentration of impurities formed in order to make the threshold of a side parasitic transistor TR higher than that of a surface TR, and the concentration of the impurities is approximately the same as the region 7. The concentration of the impurities of a region 9 of the surface is set properly conforming to the threshold, but the value is smaller than the region 7 or 4. There is no concentration difference of impurities in the lateral direction in a section under the gate oxide film functioning as the surface TR.
JP7741680A 1980-06-09 1980-06-09 Sos/mos transistor Pending JPS574164A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7741680A JPS574164A (en) 1980-06-09 1980-06-09 Sos/mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7741680A JPS574164A (en) 1980-06-09 1980-06-09 Sos/mos transistor

Publications (1)

Publication Number Publication Date
JPS574164A true JPS574164A (en) 1982-01-09

Family

ID=13633332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7741680A Pending JPS574164A (en) 1980-06-09 1980-06-09 Sos/mos transistor

Country Status (1)

Country Link
JP (1) JPS574164A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4662059A (en) * 1985-09-19 1987-05-05 Rca Corporation Method of making stabilized silicon-on-insulator field-effect transistors having 100 oriented side and top surfaces

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5286088A (en) * 1976-01-13 1977-07-16 Agency Of Ind Science & Technol Manufacture of semiconductor device
JPS5293277A (en) * 1976-01-30 1977-08-05 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5286088A (en) * 1976-01-13 1977-07-16 Agency Of Ind Science & Technol Manufacture of semiconductor device
JPS5293277A (en) * 1976-01-30 1977-08-05 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4662059A (en) * 1985-09-19 1987-05-05 Rca Corporation Method of making stabilized silicon-on-insulator field-effect transistors having 100 oriented side and top surfaces

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