JPS54990A - Manufacture for mos type integrated circuit - Google Patents

Manufacture for mos type integrated circuit

Info

Publication number
JPS54990A
JPS54990A JP6576077A JP6576077A JPS54990A JP S54990 A JPS54990 A JP S54990A JP 6576077 A JP6576077 A JP 6576077A JP 6576077 A JP6576077 A JP 6576077A JP S54990 A JPS54990 A JP S54990A
Authority
JP
Japan
Prior art keywords
manufacture
integrated circuit
mos type
type integrated
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6576077A
Other languages
Japanese (ja)
Other versions
JPS6160578B2 (en
Inventor
Hiroo Masuda
Hideo Sunami
Kiyoo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6576077A priority Critical patent/JPS54990A/en
Publication of JPS54990A publication Critical patent/JPS54990A/en
Publication of JPS6160578B2 publication Critical patent/JPS6160578B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To increase the degree of integration for MOS IC, by narrowing the region of element separation through obtaining a shallow diffusion depth, by diffusing impruity by taking the wiring region as a mask.
COPYRIGHT: (C)1979,JPO&Japio
JP6576077A 1977-06-06 1977-06-06 Manufacture for mos type integrated circuit Granted JPS54990A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6576077A JPS54990A (en) 1977-06-06 1977-06-06 Manufacture for mos type integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6576077A JPS54990A (en) 1977-06-06 1977-06-06 Manufacture for mos type integrated circuit

Publications (2)

Publication Number Publication Date
JPS54990A true JPS54990A (en) 1979-01-06
JPS6160578B2 JPS6160578B2 (en) 1986-12-22

Family

ID=13296297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6576077A Granted JPS54990A (en) 1977-06-06 1977-06-06 Manufacture for mos type integrated circuit

Country Status (1)

Country Link
JP (1) JPS54990A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037743A (en) * 1983-08-11 1985-02-27 Nec Corp Semiconductor device
US4889829A (en) * 1988-01-18 1989-12-26 Fujitsu Limited Method for producing a semiconductor device having a silicon-on-insulator structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037743A (en) * 1983-08-11 1985-02-27 Nec Corp Semiconductor device
US4889829A (en) * 1988-01-18 1989-12-26 Fujitsu Limited Method for producing a semiconductor device having a silicon-on-insulator structure

Also Published As

Publication number Publication date
JPS6160578B2 (en) 1986-12-22

Similar Documents

Publication Publication Date Title
JPS52140280A (en) Semiconductor device
JPS54990A (en) Manufacture for mos type integrated circuit
JPS5326689A (en) Semiconductor integrated circuit unit
JPS5425169A (en) Matching method for photo mask against semiconductor wafer
JPS5234680A (en) Integrated circuit
JPS5389366A (en) Production of semiconductor device
JPS53112057A (en) Production of semiconductor device
JPS52153669A (en) Photo mask of semiconductor integrated circuit
JPS5441666A (en) Semiconductor integrated circuit element
JPS52128084A (en) Manufacture of semiconductor ic unit
JPS522180A (en) Method of fabricating mos semiconductor integrated circuit
JPS53128287A (en) Production of semiconductor device
JPS5357781A (en) Semiconductor integrated circuit
JPS5390763A (en) Semiconductor element and mask for producing semiconductor element
JPS5410682A (en) Production of semiconductor elements
JPS5334479A (en) Manufacture for semiconductor device having double base construction
JPS5431272A (en) Semiconductor device
JPS53139478A (en) Manufacture of diode built in integrated circuit
JPS52135689A (en) Production of semiconductor device
JPS52103983A (en) Semiconductor integrated circuit
JPS5425177A (en) Manufacture for mos type semiconductor integrated circuit device
JPS5425160A (en) Manufacture of semiconductor device
JPS53117389A (en) Semiconductor integrated circuit device
JPS5310281A (en) Production of mos type semiconductor integrated circuit
JPS51112266A (en) Semiconductor device production method