JPS54990A - Manufacture for mos type integrated circuit - Google Patents
Manufacture for mos type integrated circuitInfo
- Publication number
- JPS54990A JPS54990A JP6576077A JP6576077A JPS54990A JP S54990 A JPS54990 A JP S54990A JP 6576077 A JP6576077 A JP 6576077A JP 6576077 A JP6576077 A JP 6576077A JP S54990 A JPS54990 A JP S54990A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- integrated circuit
- mos type
- type integrated
- mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To increase the degree of integration for MOS IC, by narrowing the region of element separation through obtaining a shallow diffusion depth, by diffusing impruity by taking the wiring region as a mask.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6576077A JPS54990A (en) | 1977-06-06 | 1977-06-06 | Manufacture for mos type integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6576077A JPS54990A (en) | 1977-06-06 | 1977-06-06 | Manufacture for mos type integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54990A true JPS54990A (en) | 1979-01-06 |
JPS6160578B2 JPS6160578B2 (en) | 1986-12-22 |
Family
ID=13296297
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6576077A Granted JPS54990A (en) | 1977-06-06 | 1977-06-06 | Manufacture for mos type integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54990A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6037743A (en) * | 1983-08-11 | 1985-02-27 | Nec Corp | Semiconductor device |
US4889829A (en) * | 1988-01-18 | 1989-12-26 | Fujitsu Limited | Method for producing a semiconductor device having a silicon-on-insulator structure |
-
1977
- 1977-06-06 JP JP6576077A patent/JPS54990A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6037743A (en) * | 1983-08-11 | 1985-02-27 | Nec Corp | Semiconductor device |
US4889829A (en) * | 1988-01-18 | 1989-12-26 | Fujitsu Limited | Method for producing a semiconductor device having a silicon-on-insulator structure |
Also Published As
Publication number | Publication date |
---|---|
JPS6160578B2 (en) | 1986-12-22 |
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