JPS5389366A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5389366A JPS5389366A JP360877A JP360877A JPS5389366A JP S5389366 A JPS5389366 A JP S5389366A JP 360877 A JP360877 A JP 360877A JP 360877 A JP360877 A JP 360877A JP S5389366 A JPS5389366 A JP S5389366A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- time
- impurity ions
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To form MOS transistor regions highly accurately and obtain diffused wiring regions having a desired resistance value by giving a difference in impurity concentration at the time of second impurity ions through making use of the change in the shape of the photo resist used for mask at the time of implanting first impurity ions.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP360877A JPS5389366A (en) | 1977-01-18 | 1977-01-18 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP360877A JPS5389366A (en) | 1977-01-18 | 1977-01-18 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5389366A true JPS5389366A (en) | 1978-08-05 |
Family
ID=11562198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP360877A Pending JPS5389366A (en) | 1977-01-18 | 1977-01-18 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5389366A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55105373A (en) * | 1978-12-04 | 1980-08-12 | Mostek Corp | Metal oxide semiconductor transistor and method of fabricating same |
JPS55120546U (en) * | 1979-02-20 | 1980-08-26 | ||
JPS58101157U (en) * | 1981-12-28 | 1983-07-09 | 東洋ゴム工業株式会社 | Drive braking characteristics tester |
JPH04239173A (en) * | 1991-01-14 | 1992-08-27 | Sharp Corp | Manufacture of solid-state image sensing device |
-
1977
- 1977-01-18 JP JP360877A patent/JPS5389366A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55105373A (en) * | 1978-12-04 | 1980-08-12 | Mostek Corp | Metal oxide semiconductor transistor and method of fabricating same |
JPS55120546U (en) * | 1979-02-20 | 1980-08-26 | ||
JPS58101157U (en) * | 1981-12-28 | 1983-07-09 | 東洋ゴム工業株式会社 | Drive braking characteristics tester |
JPH04239173A (en) * | 1991-01-14 | 1992-08-27 | Sharp Corp | Manufacture of solid-state image sensing device |
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