JPS5389366A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5389366A
JPS5389366A JP360877A JP360877A JPS5389366A JP S5389366 A JPS5389366 A JP S5389366A JP 360877 A JP360877 A JP 360877A JP 360877 A JP360877 A JP 360877A JP S5389366 A JPS5389366 A JP S5389366A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
time
impurity ions
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP360877A
Other languages
Japanese (ja)
Inventor
Kiyokatsu Jinno
Tomoko Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP360877A priority Critical patent/JPS5389366A/en
Publication of JPS5389366A publication Critical patent/JPS5389366A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form MOS transistor regions highly accurately and obtain diffused wiring regions having a desired resistance value by giving a difference in impurity concentration at the time of second impurity ions through making use of the change in the shape of the photo resist used for mask at the time of implanting first impurity ions.
COPYRIGHT: (C)1978,JPO&Japio
JP360877A 1977-01-18 1977-01-18 Production of semiconductor device Pending JPS5389366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP360877A JPS5389366A (en) 1977-01-18 1977-01-18 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP360877A JPS5389366A (en) 1977-01-18 1977-01-18 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5389366A true JPS5389366A (en) 1978-08-05

Family

ID=11562198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP360877A Pending JPS5389366A (en) 1977-01-18 1977-01-18 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5389366A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105373A (en) * 1978-12-04 1980-08-12 Mostek Corp Metal oxide semiconductor transistor and method of fabricating same
JPS55120546U (en) * 1979-02-20 1980-08-26
JPS58101157U (en) * 1981-12-28 1983-07-09 東洋ゴム工業株式会社 Drive braking characteristics tester
JPH04239173A (en) * 1991-01-14 1992-08-27 Sharp Corp Manufacture of solid-state image sensing device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105373A (en) * 1978-12-04 1980-08-12 Mostek Corp Metal oxide semiconductor transistor and method of fabricating same
JPS55120546U (en) * 1979-02-20 1980-08-26
JPS58101157U (en) * 1981-12-28 1983-07-09 東洋ゴム工業株式会社 Drive braking characteristics tester
JPH04239173A (en) * 1991-01-14 1992-08-27 Sharp Corp Manufacture of solid-state image sensing device

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