JPS544085A - Semiconductor integrated circuit device and its manufacture - Google Patents

Semiconductor integrated circuit device and its manufacture

Info

Publication number
JPS544085A
JPS544085A JP6892477A JP6892477A JPS544085A JP S544085 A JPS544085 A JP S544085A JP 6892477 A JP6892477 A JP 6892477A JP 6892477 A JP6892477 A JP 6892477A JP S544085 A JPS544085 A JP S544085A
Authority
JP
Japan
Prior art keywords
manufacture
integrated circuit
semiconductor integrated
circuit device
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6892477A
Other languages
Japanese (ja)
Inventor
Kaoru Niino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6892477A priority Critical patent/JPS544085A/en
Publication of JPS544085A publication Critical patent/JPS544085A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To establish bipolar IC having junction type FET high in input impedance and less in noise, by adding a few processes to conventional bipolar IC manufacturing technology.
JP6892477A 1977-06-13 1977-06-13 Semiconductor integrated circuit device and its manufacture Pending JPS544085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6892477A JPS544085A (en) 1977-06-13 1977-06-13 Semiconductor integrated circuit device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6892477A JPS544085A (en) 1977-06-13 1977-06-13 Semiconductor integrated circuit device and its manufacture

Publications (1)

Publication Number Publication Date
JPS544085A true JPS544085A (en) 1979-01-12

Family

ID=13387677

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6892477A Pending JPS544085A (en) 1977-06-13 1977-06-13 Semiconductor integrated circuit device and its manufacture

Country Status (1)

Country Link
JP (1) JPS544085A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57134948A (en) * 1981-02-14 1982-08-20 Pioneer Electronic Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57134948A (en) * 1981-02-14 1982-08-20 Pioneer Electronic Corp Semiconductor device

Similar Documents

Publication Publication Date Title
JPS5374385A (en) Manufacture of field effect semiconductor device
JPS5247383A (en) Semiconductor device
JPS544085A (en) Semiconductor integrated circuit device and its manufacture
JPS5360582A (en) Semiconductor ingegrated circuit device
JPS533781A (en) Semiconductor integrated circuit
JPS5216185A (en) Bipolar type semiconductor integrated circuit device
JPS5215255A (en) Integrated semiconductor logical circuit
JPS5378185A (en) Integrated circuit logical element
JPS5295154A (en) Integrated impedance circuit
JPS5420679A (en) Bipolar mos semiconductor integrated circuit device and the same
JPS53116767A (en) Emitter follower output circuit
JPS51117886A (en) Large scale semiconductor integrated circuit
JPS5425678A (en) Field effect transistor of ultra high frequency and high output
JPS52147083A (en) Semiconductor devices and integrated circuit using the same
JPS5297683A (en) Semiconductor circuit device
JPS545392A (en) Semiconductor integrated circuit and its manufacture
JPS5250181A (en) Semiconductor integrated circuit device
JPS51135481A (en) Semiconductor integrated circuit and its process
JPS5339087A (en) Integrated circuit
JPS52137271A (en) Semiconductor device
JPS53138283A (en) Manufacture of semiconductor integrated circuit
JPS5219978A (en) Manufacture process for a semiconductor device
JPS5437593A (en) Semiconductor integrated-circuit device
JPS51147274A (en) Manufacturing process of integrated circuit
JPS52119802A (en) Semiconductor ic device