JPS53125781A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS53125781A
JPS53125781A JP4051877A JP4051877A JPS53125781A JP S53125781 A JPS53125781 A JP S53125781A JP 4051877 A JP4051877 A JP 4051877A JP 4051877 A JP4051877 A JP 4051877A JP S53125781 A JPS53125781 A JP S53125781A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
intrusion
insulating film
avoid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4051877A
Other languages
Japanese (ja)
Other versions
JPS6038873B2 (en
Inventor
Yasuaki Hokari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4051877A priority Critical patent/JPS6038873B2/en
Publication of JPS53125781A publication Critical patent/JPS53125781A/en
Publication of JPS6038873B2 publication Critical patent/JPS6038873B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD

Abstract

PURPOSE:To reduce the manufacturing process of charge transfer elements and to avoid the intrusion of the impurity region to the channel region, by performing a process removing the injection damage in the semiconductor crystal caused by ion implantation and another process forming the insulating film used for the next process with only one process.
JP4051877A 1977-04-08 1977-04-08 Manufacturing method of semiconductor device Expired JPS6038873B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4051877A JPS6038873B2 (en) 1977-04-08 1977-04-08 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4051877A JPS6038873B2 (en) 1977-04-08 1977-04-08 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS53125781A true JPS53125781A (en) 1978-11-02
JPS6038873B2 JPS6038873B2 (en) 1985-09-03

Family

ID=12582725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4051877A Expired JPS6038873B2 (en) 1977-04-08 1977-04-08 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6038873B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157234A (en) * 1979-05-25 1980-12-06 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US10369058B2 (en) 2009-06-16 2019-08-06 3M Innovative Properties Company Conformable medical dressing with self supporting substrate

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6129981U (en) * 1984-07-27 1986-02-22 トヨタ自動車株式会社 Rear floor vibration isolation structure
JPS62196778U (en) * 1986-06-05 1987-12-14

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157234A (en) * 1979-05-25 1980-12-06 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US10369058B2 (en) 2009-06-16 2019-08-06 3M Innovative Properties Company Conformable medical dressing with self supporting substrate

Also Published As

Publication number Publication date
JPS6038873B2 (en) 1985-09-03

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