JPS5258489A - Production of semiconductor memory element - Google Patents
Production of semiconductor memory elementInfo
- Publication number
- JPS5258489A JPS5258489A JP50134094A JP13409475A JPS5258489A JP S5258489 A JPS5258489 A JP S5258489A JP 50134094 A JP50134094 A JP 50134094A JP 13409475 A JP13409475 A JP 13409475A JP S5258489 A JPS5258489 A JP S5258489A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor memory
- memory element
- trapping region
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To perform avalanche injection of desired charges into trapping region by forming the charge trapping region through doping of a desired impurity into a gate insulation film by an ion implantation method, and applying a reverse bias voltage between one or both of source and drain regions and the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50134094A JPS5258489A (en) | 1975-11-10 | 1975-11-10 | Production of semiconductor memory element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50134094A JPS5258489A (en) | 1975-11-10 | 1975-11-10 | Production of semiconductor memory element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5258489A true JPS5258489A (en) | 1977-05-13 |
Family
ID=15120282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50134094A Pending JPS5258489A (en) | 1975-11-10 | 1975-11-10 | Production of semiconductor memory element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5258489A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5153684A (en) * | 1988-10-19 | 1992-10-06 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device with offset transistor |
WO2004021449A1 (en) * | 2002-08-30 | 2004-03-11 | Fasl Llc | Semiconductor memory and method for manufacturing same |
-
1975
- 1975-11-10 JP JP50134094A patent/JPS5258489A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5153684A (en) * | 1988-10-19 | 1992-10-06 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device with offset transistor |
WO2004021449A1 (en) * | 2002-08-30 | 2004-03-11 | Fasl Llc | Semiconductor memory and method for manufacturing same |
US7253046B2 (en) | 2002-08-30 | 2007-08-07 | Spansion Llc. | Semiconductor memory device and manufacturing method thereof |
US7410857B2 (en) | 2002-08-30 | 2008-08-12 | Spansion Llc. | Semiconductor memory device and manufacturing method thereof |
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Legal Events
Date | Code | Title | Description |
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FPAY | Renewal fee payment |
Year of fee payment: 8 Free format text: PAYMENT UNTIL: 20081222 |
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FPAY | Renewal fee payment |
Year of fee payment: 9 Free format text: PAYMENT UNTIL: 20091222 |
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FPAY | Renewal fee payment |
Free format text: PAYMENT UNTIL: 20101222 Year of fee payment: 10 |
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LAPS | Cancellation because of no payment of annual fees |