JPS52137986A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52137986A
JPS52137986A JP5496876A JP5496876A JPS52137986A JP S52137986 A JPS52137986 A JP S52137986A JP 5496876 A JP5496876 A JP 5496876A JP 5496876 A JP5496876 A JP 5496876A JP S52137986 A JPS52137986 A JP S52137986A
Authority
JP
Japan
Prior art keywords
breakdown
junction
accumulating
positive
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5496876A
Other languages
Japanese (ja)
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5496876A priority Critical patent/JPS52137986A/en
Publication of JPS52137986A publication Critical patent/JPS52137986A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain a non-volatile memory of increased repeating times of electrical rewriting by accumulating negative charge in a floating gate by the breakdown of P<+>N<+> junction and accumulating positive charge by the breakdown of the PN junction of the locally thin portion formed on an insulation gate film, as well as by mutually isolating the injection paths for the positive and negative charges.
JP5496876A 1976-05-13 1976-05-13 Semiconductor device Pending JPS52137986A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5496876A JPS52137986A (en) 1976-05-13 1976-05-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5496876A JPS52137986A (en) 1976-05-13 1976-05-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS52137986A true JPS52137986A (en) 1977-11-17

Family

ID=12985448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5496876A Pending JPS52137986A (en) 1976-05-13 1976-05-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52137986A (en)

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