JPS5796552A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5796552A
JPS5796552A JP17353580A JP17353580A JPS5796552A JP S5796552 A JPS5796552 A JP S5796552A JP 17353580 A JP17353580 A JP 17353580A JP 17353580 A JP17353580 A JP 17353580A JP S5796552 A JPS5796552 A JP S5796552A
Authority
JP
Japan
Prior art keywords
film
layer
phosphorous
glass layer
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17353580A
Other languages
Japanese (ja)
Other versions
JPS6353695B2 (en
Inventor
Yasuo Iida
Chuichi Takegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17353580A priority Critical patent/JPS5796552A/en
Publication of JPS5796552A publication Critical patent/JPS5796552A/en
Publication of JPS6353695B2 publication Critical patent/JPS6353695B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To avoid failures such as a level discontinuity by stage of a wiring by a method wherein a compound film of a silicone oxide film and a phosphorous glass film is adopted as a layer insulating film, so that a smooth layer insulating film can be formed without deteriorating the reliability of insulation. CONSTITUTION:An Si oxide film 310 is formed on a surface of a MOS semiconductor device which is composed by forming a diffused layer 307 which is to be a source and drain and a gate electrode 309 on a surface of a semiconductor substrate 301 such as Si. Then a thin glass layer 311 with phosphorous density less than 11% is formed. The entire wafer is thermal processed, so that a difference in level is relieved by smoothening the phosphorous glass layer 311 like a slope 3110. A contact hole with a vertical wall is formed by hightly oriented dry etching with gas containing fluorine using a resist 312 as a mask. Then by wet-etching the surcumference of the contact hole is made smooth like dot line 903 because etching speed of the phosphorous glass layer is high.
JP17353580A 1980-12-09 1980-12-09 Manufacture of semiconductor device Granted JPS5796552A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17353580A JPS5796552A (en) 1980-12-09 1980-12-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17353580A JPS5796552A (en) 1980-12-09 1980-12-09 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5796552A true JPS5796552A (en) 1982-06-15
JPS6353695B2 JPS6353695B2 (en) 1988-10-25

Family

ID=15962323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17353580A Granted JPS5796552A (en) 1980-12-09 1980-12-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5796552A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237936A (en) * 1985-08-09 1987-02-18 インタ−ナショナル．ビジネス．マシ−ンズ．コ−ポレ−ション Formation of openings simultaneously in layers different in thickness

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237936A (en) * 1985-08-09 1987-02-18 インタ−ナショナル．ビジネス．マシ−ンズ．コ−ポレ−ション Formation of openings simultaneously in layers different in thickness
JPH0545057B2 (en) * 1985-08-09 1993-07-08 Ibm

Also Published As

Publication number Publication date
JPS6353695B2 (en) 1988-10-25

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