JPS5776875A - Mos semiconductor device - Google Patents
Mos semiconductor deviceInfo
- Publication number
- JPS5776875A JPS5776875A JP15253280A JP15253280A JPS5776875A JP S5776875 A JPS5776875 A JP S5776875A JP 15253280 A JP15253280 A JP 15253280A JP 15253280 A JP15253280 A JP 15253280A JP S5776875 A JPS5776875 A JP S5776875A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- region
- oxide film
- polycrystalline silicon
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To avoid generation of micro crack in a region where a wiring polycrystalline silicon and a metal wiring cross each other holding on insulating film in between by a method wherein an insulating film between the polycrystalline silicon and a substrate is identical with a gate insulating film of MOSFET. CONSTITUTION:A field oxide film 11 of a region where a wiring polycrystalline silicon and an aluminum wiring cross each other is removed and an oxide film 12 is formed when a gate oxide film of MOSFET is formed. Then after the polycrystalline silicon wiring 8 is formed and a source region and a drain region of MOSFET are formed, a layer insulating layer 14 and the aluminum wiring 9 are formed. With above method, as the crossing region is not formed on the field oxide film 11, difference in level is not produced in the crossing region even when the field oxide film 11 is etched in a forming process of the source and the drain region, so that generation of micro crack in the wiring can be avoided.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15253280A JPS5776875A (en) | 1980-10-30 | 1980-10-30 | Mos semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15253280A JPS5776875A (en) | 1980-10-30 | 1980-10-30 | Mos semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5776875A true JPS5776875A (en) | 1982-05-14 |
Family
ID=15542490
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15253280A Pending JPS5776875A (en) | 1980-10-30 | 1980-10-30 | Mos semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5776875A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007029839A (en) * | 2005-07-26 | 2007-02-08 | Anest Iwata Corp | Low exhaust spray coating chamber |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54889A (en) * | 1977-06-06 | 1979-01-06 | Hitachi Ltd | Semiconductor integrated circuit device and its manufacture |
JPS5485686A (en) * | 1977-12-20 | 1979-07-07 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device |
-
1980
- 1980-10-30 JP JP15253280A patent/JPS5776875A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54889A (en) * | 1977-06-06 | 1979-01-06 | Hitachi Ltd | Semiconductor integrated circuit device and its manufacture |
JPS5485686A (en) * | 1977-12-20 | 1979-07-07 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007029839A (en) * | 2005-07-26 | 2007-02-08 | Anest Iwata Corp | Low exhaust spray coating chamber |
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